Differential TWE MZM driver for silicon photonics
US-9507237-B2 · Nov 29, 2016 · US
US9841618B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9841618-B1 |
| Application number | US-201715491834-A |
| Country | US |
| Kind code | B1 |
| Filing date | Apr 19, 2017 |
| Priority date | Apr 19, 2017 |
| Publication date | Dec 12, 2017 |
| Grant date | Dec 12, 2017 |
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An optical modulator circuit includes first and second electrodes, first and second p-n junction segments (PNJSs), and first and second optical waveguides. The first PNJS includes a first modulating p-n junction (MPNJ) in series with a first non-modulating device (NMD) that are connected to the first and second electrodes, respectively, where the first NMD includes a first substantially larger capacitance than the first MPNJ. The second PNJS includes a second NMD in series with a second MPNJ that are connected to the first and second electrodes, respectively, where the second NMD includes a second substantially larger capacitance than the second MPNJ. The first and second optical waveguides superimpose the first and second MPNJs, respectively, where the first and second MPNJs are configured to modulate a refractive index of the first and second optical waveguides, respectively, based on the substantially larger capacitance of the first NMD and the second NMD.
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What is claimed is: 1. An optical modulator circuit, comprising: a first electrode and a second electrode; a first p-n junction segment (PNJS) comprising a first modulating p-n junction (MPNJ) in series with a first non-modulating device (NMD), wherein the first MPNJ and the first NMD are connected to the first electrode and the second electrode, respectively, wherein the first NMD comprises a first substantially larger capacitance than the first MPNJ; a second PNJS comprising a second NMD in series with a second MPNJ, wherein the second NMD and the second MPNJ are connected to the first electrode and the second electrode, respectively, wherein the second NMD comprises a second substantially larger capacitance than the second MPNJ; and a first optical waveguide and a second optical waveguide that superimpose the first MPNJ and the second MPNJ, respectively, wherein the first MPNJ and the second MPNJ are configured to modulate a refractive index of the first optical waveguide and the second optical waveguide based on the substantially larger capacitance of the first NMD and the second NMD. 2. The optical modulator circuit of claim 1 , wherein the first PNJS is one of a first plurality of PNJSs of the optical modulator circuit that have respective MPNJs connected to the first electrode, and wherein the second PNJS is one of a second plurality of PNJSs of the optical modulator circuit that have respective MPNJs connected to the second electrode. 3. The optical modulator circuit of claim 1 , wherein the first electrode and the second electrode are configured to propagate a modulating voltage to the first PNJS and the second PNJS for modulating the refractive index, and wherein the first optical waveguide and the second optical waveguide are configured to propagate an optical signal that is encoded, via the refractive index, with information contained in the modulating voltage. 4. The optical modulator circuit of claim 3 , wherein the first NMD is configured to cause the first MPNJ to receive a first majority portion of the modulating voltage based on the first substantially larger capacitance, wherein the second NMD is configured to cause the second MPNJ to receive a second majority portion of the modulating voltage based on the second substantially larger capacitance, and wherein the first majority portion of the modulating voltage received by the first MPNJ and the second majority portion of the modulating voltage received by the second MPNJ improve an efficiency of the optical modulator circuit. 5. The optical modulator circuit of claim 3 , wherein the first PNJS further comprises a first metal bridge, and wherein the second PNJS further comprises a second metal bridge, and wherein the first metal bridge and the second metal bridge are configured to allow the first PNJS and the second PNJS to overlap along a direction of optical signal propagation. 6. The optical modulator circuit of claim 3 , wherein the first electrode and the second electrode comprise a coplanar strip waveguide as a radio frequency (RF) traveling-electrode for propagating the modulating voltage, and wherein the first electrode, the second electrode, the first optical waveguide, and the second optical waveguide are substantially parallel to each other along a direction of optical signal propagation. 7. The optical modulator circuit of claim 3 , further comprising: a first bias voltage source connected to the first MPNJ and the first NMD, wherein the first bias voltage source is configured to bias the first MPNJ to modulate the refractive index of the first optical waveguide according to the modulating voltage; and a second bias voltage source connected to the second MPNJ and the second NMD, wherein the second bias voltage source is configured to bias the second MPNJ to modulate the refractive index of the second optical waveguide according to the modulating voltage. 8. The optical modulator circuit of claim 7 , wherein the first PNJS and the second PNJS have a same electrical connection sequence, and wherein the first bias voltage source and the second bias voltage source have a same polarity. 9. The optical modulator circuit of claim 7 , wherein the first PNJS and the second PNJS have different electrical connection sequences, and wherein the first bias voltage source and the second bias voltage source have different polarities. 10. The optical modulator circuit of claim 7 , wherein the first NMD comprises a first capacitor, and wherein the second NMD comprises a second capacitor. 11. The optical modulator circuit of claim 7 , wherein the first NMD comprises a first dummy p-n junction, and wherein the second NMD comprises a second dummy p-n junction. 12. An optical modulator circuit, comprising: a first electrode, a second electrode, and a center electrode; a first p-n junction segment (PNJS) comprising a first modulating p-n junction (MPNJ) in series with a first dummy p-n junction (DPNJ), wherein the first MPNJ and the first DPNJ are connected to the center electrode and the first electrode, respectively, wherein the first DPNJ comprises a first substantially larger capacitance than the first MPNJ; a second PNJS comprising a second DPNJ in series with a second MPNJ, wherein the second MPNJ and the second DPNJ are connected to the center electrode and the second electrode, respectively, wherein the second DPNJ comprises a second substantially larger capacitance than the second MPNJ; and a first optical waveguide and a second optical waveguide that superimpose the first MPNJ and the second MPNJ, respectively, wherein the first MPNJ and the second MPNJ are configured to modulate a refractive index of the first optical waveguide and the second optical waveguide based on the substantially larger capacitance of the first DPNJ and the second DPNJ. 13. The optical modulator circuit of claim 12 , wherein the first electrode, the second electrode, and the center electrode are configured to propagate a modulating voltage to the first PNJS and the second PNJS for modulating the refractive index, and wherein the first optical waveguide and the second optical waveguide are configured to propagate an optical signal that is encoded, via the refractive index, with information contained in the modulating voltage. 14. The optical modulator circuit of claim 13 , wherein the first DPNJ is configured to cause the first MPNJ to receive a first majority portion of the modulating voltage based on the first substantially larger capacitance, wherein the second DPNJ is configured to cause the second MPNJ to receive a second majority portion of the modulating voltage based on the second substantially larger capacitance, and wherein the first majority portion of the modulating voltage received by the first MPNJ and the second majority portion of the modulating voltage received by the second MPNJ improve an efficiency of the optical modulator circuit. 15. The optical modulator circuit of claim 13 , wherein the first electrode, the second electrode, and the center electrode comprise a coplanar waveguide as a radio frequency (RF) traveling-electrode for propagating the modulating voltage. 16. The optical modulator circuit of claim 13 , wherein the first electrode, the second electrode, the center electrode, the first optical waveguide, and the second optical waveguide are substantially parallel to each other along a direction of optical signal propagation. 17. The optical modulator circuit of claim 13 , further comprising: a differential modulating voltage source configured to d
push-pull · CPC title
the optical waveguides being made of semiconducting material · CPC title
in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title
controlled by a high-frequency electromagnetic component in an electric waveguide structure · CPC title
Operation of devices; Circuit arrangements, not otherwise provided for in this subclass · CPC title
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