Error detection code generation circuits of semiconductor devices, memory controllers including the same and semiconductor memory devices including the same

Patent metadata

Field	Value
Publication number	US-11223373-B2
Application number	US-201916599648-A
Country	US
Kind code	B2
Filing date	Oct 11, 2019
Priority date	Dec 2, 2016
Publication date	Jan 11, 2022
Grant date	Jan 11, 2022

Abstract

An error detection code generation circuit of a semiconductor device includes a first cyclic redundancy check (CRC) engine, a second CRC engine and an output selection engine. The first CRC engine generates first error detection code bits using a first generation matrix, based on a plurality of first unit data and first DBI bits in response to a mode signal. The second CRC engine generates second error detection code bits using a second generation matrix, based on a plurality second unit data and second DBI bits, in response to the mode signal. The output selection engine generates final error detection code bits by merging the first error detection code bits and the second error detection code bits in response to the mode signal. The first generation matrix is the same as the second generation matrix.

First claim

What is claimed is:

1. A semiconductor memory device, comprising:
a memory cell array;
an error detection code generation circuit configured, in response to a mode signal, to generate first error detection code bits and second error detection code bits based on main data including a plurality of first unit data and a plurality second unit data, first data bus inversion (DBI) bits, wherein each of the first DBI bits indicates whether a corresponding bit of the first unit data is inverted, and second DBI bits, wherein each of the second DBI bits indicates whether a corresponding bit of the second unit data is inverted, and to generate final error detection code bits by merging the first error detection code bits and the second error detection code bits, wherein the mode signal indicates a code rate mode and the first unit data and the second unit data are transmitted from a memory controller and are to be stored in the memory cell array;
an error detector configured to generate a detection signal which indicates whether the main data, which is transmitted from the memory controller, includes errors based on the final error detection code bits and transmission error detection code bits, wherein the memory controller is configured to generate the transmission error detection code bits based on the main data, the first DBI bits and the second DBI bits; and
a control logic circuit configured to control an access to the memory cell array in response to a command and an address provided from the memory controller,
wherein the error detection code generation circuit comprises:
a first cyclic redundancy check (CRC) engine configured to generate the first error detection code bits using a first generation matrix, based on the first unit data and the first DBI bits in response to the mode signal;
a second CRC engine configured to generate the second error detection code bits using a second generation matrix, based on the second unit data and second DBI bits, in response to the mode signal; and
an output selection engine configured to generate the final error detection code bits by merging the first error detection code bits and the second error detection code bits in response to the mode signal,
wherein the first generation matrix is the same as the second generation matrix in a first code rate mode and the first generation matrix and a second modified matrix are different from each other in a second code rate mode such that the second modified matrix has an inverted row of bits corresponding to a non-inverted row of bits in the first generation matrix.

2. The semiconductor memory device of claim 1 , wherein the control logic circuit is configured to receive the detection signal and to store the main data in the memory cell array when the detection signal indicates that the main data does not include the errors, and
the semiconductor memory device is configured to transmit the detection signal to the memory controller.

3. The semiconductor memory device of claim 1 , wherein a number of the final error detection code bits varies in response to the code rate mode designated by the mode signal,
when the mode signal designates the first code rate mode,
the first CRC engine is configured to generate the first error detection code bits by using the first generation matrix,
the second CRC engine is configured to generate the second error detection code bits by using the second generation matrix, and
the output selection engine is configured to provide the first error detection code bits as upper bits of the final error detection code bits and to provide the second error detection code bits as lower bits of the final error detection code bits.

4. The semiconductor memory device of claim 1 , wherein a number of the final error detection code bits varies in response to the code rate mode designated by the mode signal,
when the mode signal designates the second code rate mode,
the output selection engine is configured to output the final error detection code bits by merging corresponding bits of the first error detection code bits and the second error detection code bits, and
the second code rate mode includes a first sub code rate mode, and a second sub code rate mode.

5. The semiconductor memory device of claim 1 , wherein when the error detection code generation circuit operates in the second code rate mode in response to the mode signal, an error detection capability of the error detection code generation circuit which uses at least one of a first modified matrix and the second modified matrix is greater than an error detection capability of the error detection code generation circuit which uses the first generation matrix and the second generation matrix,
wherein the first modified matrix is generated by modifying the first generation matrix and the second modified matrix is generated by modifying the second generation matrix, and
wherein the memory cell array is a three-dimensional memory cell array.

6. An error detection code generation circuit for a semiconductor memory device, the error detection code generation circuit comprising:
a first cyclic redundancy check (CRC) engine configured to receive first unit data and first data bus inversion bits to generate first error detection code bits based on the first unit data and the first data bus inversion bits;
a second CRC engine configured to receive second unit data and second data bus inversion bits to generate second error detection code bits based on the second unit data and the second data bus inversion bits; and
an XOR circuit configured to receive the first error detection code bits and the second error detection code bits, and to merge the first error detection code bits and the second error detection code bits into final error detection code bits by performing an exclusive OR function,
wherein the first error detection code bits and the second error detection code bits are output in a full rate mode in response to a first level of a mode signal and the final error detection code bits are output in a half rate mode in response to a second level of the mode signal,
wherein the first CRC engine uses a first generation matrix for generating the first error detection code bits based on the first unit data and the first data bus inversion bits, and the second CRC engine uses a second generation matrix for generating the second error detection code bits based on the second unit data and the second data bus inversion bits, and the first generation matrix and the second generation matrix are the same when the full rate mode is selected and bits of one row of the second generation matrix is are inverted while corresponding bits of the first generation matrix are not inverted when the half rate mode is selected.

7. An error detection code generation circuit for a semiconductor memory device, the error detection code generation circuit comprising:
a first cyclic redundancy check (CRC) engine configured to receive first unit data and to generate first error detection code bits based on the first unit data;
a second CRC engine configured to receive second unit data and to generate second error detection code bits based on the second unit data;
a multiplexer configured to select one of a most significant bit of the second error detection code bits and an inverted version of the most significant bit of the second error detection code bits in response to a mode signal input to the multiplexer; and
an XOR circuit configured to receive the first error detection code bits and the second error detection code bits, and to merge the first error detection code bits, the selected one of the second error detection code bits and a remaining bit or remaining bits of the second error detection code bits into final error detection code bits

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cha Sang-Uhn
• Ryu Ye-Sin
• Kim Young-Sik
• Doo Su-Yeon

Classifications

• H03M13/09

  Error detection only, e.g. using cyclic redundancy check [CRC] codes or single parity bit · CPC title

• G06F11/102 Primary

  Error in check bits · CPC title

• H03M13/2906 Primary

  using block codes (H03M13/2957 takes precedence) · CPC title

• G06F11/1004 Primary

  to protect a block of data words, e.g. CRC or checksum (G06F11/1076 takes precedence; security arrangements for protecting computers or computer systems against unauthorized activity G06F21/00) · CPC title