Multi-cell detector for charged particles

Patent metadata

Field	Value
Publication number	US-11222766-B2
Application number	US-201816652398-A
Country	US
Kind code	B2
Filing date	Sep 28, 2018
Priority date	Sep 29, 2017
Publication date	Jan 11, 2022
Grant date	Jan 11, 2022

Abstract

A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

First claim

What is claimed is:

1. A substrate comprising:
a first layer including a first region of a first conductivity type, wherein the first conductivity type is p-type semiconductor;
a second layer that includes a plurality of second regions of a second conductivity type and one or more third regions of the first conductivity type, wherein the second conductivity type is n-type semiconductor, and the plurality of second regions are partitioned from one another by the one or more third regions; and
an intrinsic layer between the first layer and the second layer, wherein the first layer is configured to receive a plurality of secondary electron beams generated from a sample surface.

2. The substrate of claim 1 , wherein the plurality of second regions are spaced apart from the one or more third regions.

3. The substrate of claim 1 , wherein the second layer further includes an intrinsic region separating each of the plurality of second regions from the one or more third regions of the second layer.

4. The substrate of claim 1 , wherein each of the plurality of second regions is surrounded by the intrinsic region in the second layer.

5. The substrate of claim 1 , wherein a width of the plurality of second regions is greater than a width of the one or more third regions.

6. The substrate of claim 1 , wherein the intrinsic layer is n-doped, wherein the intrinsic layer has a doping concentration lower than doping concentrations of the first region, the plurality of second regions, and the one or more third regions.

7. The substrate of claim 1 , wherein the intrinsic layer is p-doped, wherein the intrinsic layer has a doping concentration lower than doping concentrations of the first region, the plurality of second regions, and the one or more third regions.

8. The substrate of claim 1 , wherein:
the first region is coated with a first metal; and
the plurality of second regions and the one or more third regions are coated with a second metal.

9. The substrate of claim 8 , wherein atomic number of the first metal is smaller than atomic number of the second metal.

10. The substrate of claim 8 , wherein the first metal is aluminum.

11. The substrate of claim 8 , wherein the second metal is gold.

12. The substrate of claim 8 , further comprising:
an insulating layer that is deposited on the second metal and that covers gaps between the plurality of second regions and the one or more third regions of the second layer.

13. The substrate of claim 1 , further comprising:
a plurality of signal output lines connected to the plurality of second regions.

14. An apparatus comprising:
a charged particle source configured to generate one or more charged particle beams;
a detector comprising:
a first layer including a first region of a first conductivity type, wherein the first conductivity type is p-type semiconductor,
a second layer including a plurality of second regions of a second conductivity type, wherein the second conductivity type is n-type semiconductor, and wherein the plurality of second regions are partitioned from one another, and
an intrinsic layer between the first layer and the second layer,
wherein the plurality of second regions are configured to output electrical signals based on received charged particles, and wherein the first layer is configured to receive a plurality of secondary electron beams generated from a sample surface; and

an amplifier configured to amplify the electrical signals outputted by the plurality of second regions and to forward the amplified electrical signals to a controller.

15. A method comprising:
applying a first bias to a first region of a first conductivity type of a first layer of a detector and second bias to a plurality of second regions of a second conductivity type of a second layer of the detector, the detector including an intrinsic region between the first layer and the second layer, wherein the first conductivity type is p-type semiconductor and the second conductivity type is n-type semiconductor, wherein the plurality of second regions are partitioned from one another by a partition region, and wherein the first layer is configured to receive a plurality of secondary electron beams generated from a sample surface;
receiving an output signal from the second layer; and
determining a charged particle signal based on the received output signal.

Assignees

• Asml Netherlands Bv

Inventors

• Wang Joe
• Wang Yongxin
• Chen Zhong-Wei
• Hu Xuerang

Classifications

• H10F39/191

  Photoconductor image sensors · CPC title

• H10F39/803

  Pixels having integrated switching, control, storage or amplification elements · CPC title

• H01J37/28

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title

• H01J2237/2446

  Position sensitive detectors · CPC title

• H01J37/244 Primary

  Detectors; Associated components or circuits therefor · CPC title