Dielectric, capacitor including dielectric, semiconductor device including dielectric, and method of manufacturing dielectric

Patent metadata

Field	Value
Publication number	US-11217660-B2
Application number	US-202016853195-A
Country	US
Kind code	B2
Filing date	Apr 20, 2020
Priority date	Oct 21, 2019
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.(RbxA1-x)(ByTa1-y)O3-δ  <Formula 1>In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.

First claim

What is claimed is:

1. A dielectric comprising an oxide represented by Formula 1 below and having a cubic crystal structure:
(Rb x A 1-x )(B y Ta 1-y )O 3-δ   <Formula 1>

wherein, in Formula 1, A is at least one of K, Na, Li, and Cs,
B is at least one of Nb, and V, and
0.01≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.

2. The dielectric of claim 1 , wherein, in Formula 1, x is about 0.025 to about 0.15.

3. The dielectric of claim 1 , wherein, in Formula 1, y is 0 or about 0.01 to about 0.2.

4. The dielectric of claim 2 , wherein, in Formula 1, y is about 0.025 to about 0.15.

5. The dielectric of claim 1 , wherein the oxide is represented by Formula 2 below:
(Rb x K 1-x )(Nb y Ta 1-y )O 3-δ   <Formula 2>

wherein, in Formula 2, 0.01≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.

6. The dielectric of claim 5 , wherein, in Formula 2, x is about 0.025 to about 0.15 and y is about 0.025 to about 0.15.

7. The dielectric of claim 1 , wherein the oxide is represented by Formula 3 below:
(Rb x K 1-x )TaO 3-δ   <Formula 3>

wherein, in Formula 3, 0.01≤x≤0.2 and 0≤δ≤0.5 are satisfied.

8. The dielectric of claim 7 , wherein, in Formula 3, x is about 0.025 to about 0.15.

9. The dielectric of claim 1 , wherein the oxide is at least one of Rb x K 1-x TaO 3 (0.01≤x≤0.2), Rb x Li 1-x TaO 3 (0.01≤x≤0.2), Rb x Na 1-x TaO 3 (0.01≤x≤0.2), Rb x Cs 1-x TaO 3 (0.01≤x≤0.2), Rb x K 1-x Nb y Ta 1-y O 3 (0.01≤x≤0.2, y=0 or 0.01≤y≤0.2), Rb x Li 1-x Nb y Ta 1-y O 3 (0.01x0.2, y=0 or 0.01≤y≤0.2), Rb x Na 1-x Nb y Ta 1-y O 3 (0.01x0.2, y=0 or 0.01≤y≤0.2), Rb x Cs 1-x Nb y Ta 1-y O 3 (0.01x0.2, y=0 or 0.01≤y≤0.2), Rb x K 1-x V y Ta 1-y O 3 (0.01≤x≤0.2, y=0 or 0.01≤y≤0.2), Rb x Li 1-x V y Ta 1-y O 3 (0.01x0.2, y=0 or 0.01≤y≤0.2), Rb x Na 1-x V y Ta 1-y O 3 (0.01≤x≤0.2, y=0 or 0.01≤y≤0.2), and Rb x Cs 1-x V y Ta 1-y O 3 (0.01≤x≤0.2, y=0 or 0.01≤y≤0.2).

10. The dielectric of claim 1 , wherein the oxide is at least one of (Rb 0.15 K 0.85 )TaO 3 , (Rb 0.1 K 0.9 )TaO 3 , (Rb 0.09 K 0.91 )TaO 3 , (Rb 0.08 K 0.92 )TaO 3 , (Rb 0.07 K 0.93 )TaO 3 , (Rb 0.06 K 0.94 )TaO 3 , (Rb 0.07 K 0.93 )TaO 3 , (Rb 0.08 K 0.92 )TaO 3 , (Rb 0.09 K 0.91 )TaO 3 , (Rb 0.05 K 0.95 )TaO 3 , (Rb 0.025 K 0.075 )TaO 3 , Rb 0.05 K 0.05 Nb 0.05 Ta 0.05 O 3 , Rb 0.1 K 0.9 Nb 0.1 Ta 0.9 O 3 , Rb 0.15 K 0.85 Nb 0.15 Ta 0.85 O 3 , Rb 0.2 K 0.8 Nb 0.2 Ta 0.8 O 3 , and Rb 0.025 K 0.075 Nb 0.025 Ta 0.075 O 3 .

11. The dielectric of claim 1 , wherein the oxide has a dielectric constant of about 50 or more at 1 MHz.

12. The dielectric of claim 1 , wherein the oxide has a maximum dielectric constant of about 100 or more at 1 MHz.

13. The dielectric of claim 1 , wherein the oxide has a relative density of about 50% or more as measured by a buoyancy method.

14. The dielectric of claim 1 , wherein the oxide has a bandgap of about 3 eV or more.

15. The dielectric of claim 1 , wherein the oxide has a melting point of about 1200° C. or higher.

16. A capacitor comprising:
a first electrode;
a second electrode; and
the dielectric of claim 1 between the first electrode and the second electrode.

17. A semiconductor device comprising: the dielectric of claim 1 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Hyeoncheol
• Kwak Chan
• Do Euncheol
• Jo Giyoung

Classifications

• H10D1/042

  using deposition processes to form electrode extensions · CPC title

• H10D1/696

  comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688) · CPC title

• H10D1/716

  having vertical extensions · CPC title

• H10D1/682 Primary

  having dielectrics comprising perovskite structures · CPC title

• H10D1/68 Primary

  Capacitors having no potential barriers · CPC title