Dielectric, capacitor and semiconductor device including the same, and method of preparing the dielectric

Patent metadata

Field	Value
Publication number	US-2020165142-A1
Application number	US-201916409096-A
Country	US
Kind code	A1
Filing date	May 10, 2019
Priority date	Nov 26, 2018
Publication date	May 28, 2020
Grant date	—

Abstract

Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:
<Formula 1>
A x B y O 3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.

First claim

What is claimed is:

1 . A dielectric comprising an oxide comprising a composition represented by Formula 1 and comprising a perovskite type crystal structure belonging to a polar space group or a non-polar space group other than a Pbnm space group:
A x B y O 3-δ ,   <Formula 1>
wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5..

2 . The dielectric of claim 1 , wherein the oxide has a dielectric constant or higher at 1 MHz.

3 . The dielectric of claim 1 , wherein the polar space group comprises a Pc2 1 n space group, and the non-polar space group comprises a Pcmn, P4/mbm, Pm-3m, or Cmcm space group.

4 . The dielectric of claim 1 , wherein the oxide comprises a composition represented by Formula 2:
A x B y O 3 ,   <Formula 2>
wherein, in Formula 2, A is a monovalent cation, B is a pentavalent cation, and 0.9≤x≤1.5 and 0.9≤y≤1.5.

5 . The dielectric of claim 1 , wherein A comprises at least one selected from an alkali metal element and an alkaline earth metal element.

6 . The dielectric of claim 1 , wherein A comprises at least one selected from lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and cesium (Cs).

7 . The dielectric of claim 1 , wherein B is a transition metal element.

8 . The dielectric of claim 1 , wherein B comprises at least one selected from vanadium (V), niobium (Nb), and tantalum (Ta).

9 . The dielectric of claim 1 , wherein A comprises at least one selected from Li, Na, K, Rb, and Cs, and B comprises at least one selected from V, Nb, and Ta.

10 . The dielectric of claim 1 , wherein the oxide comprises at least one selected from Na 1−x K x TaO 3 (0≤x≤1), Na 1−x Li x TaO 3 (0≤x≤1), Na 1−x K x TaO 3 (0≤x≤1), Na 1−x Rb x TaO 3 (0≤x≤1), Na 1−x Cs x TaO 3 (0≤x≤1), Na 1−x K x VO 3 (0≤x≤1), Na 1−x Li x VO 3 (0≤x≤1), Na 1−x K x VO 3 (0≤x≤1), Na 1−x Rb x VO 3 (0≤x≤1), Na 1−x Cs x VO 3 (0≤x≤1), Na 1−x K x NbO 3 (0≤x≤1), Na 1−x Li x NbO 3 (0≤x≤1), Na 1−x K x NbO 3 (0≤x≤1), Na 1−x Rb x NbO 3 (0≤x≤1), Na 1−x Cs x NbO 3 (0≤x≤1), K 1−x Li x TaO 3 (0≤x≤1), K 1−x Rb x TaO 3 (0≤x≤1), K 1−x Cs x TaO 3 (0≤x≤1), K 1−x Li x VO 3 (0≤x≤1), K 1−x Rb x VO 3 (0≤x≤1), Na 1−x Cs x VO 3 (0≤x≤1), K 1−x Li x NbO 3 (0≤x≤1), K 1−x Rb x NbO 3 (0≤x≤1), and K 1−x Cs x NbO 3 (0≤x≤1).

11 . The dielectric of claim 1 , wherein the oxide comprises at least one selected from NaTaO 3 , LiTaO 3 , KTaO 3 , RbTaO 3 , CsTaO 3 , NaVO 3 , and NaNbO 3 .

12 . The dielectric of claim 1 , wherein the oxide is an aggregate of primary particles.

13 . The dielectric of claim 1 , wherein the primary particles have an average particle diameter in a range of 1 μm to 10 μm.

14 . The dielectric of claim 1 , wherein the oxide is porous.

15 . The dielectric of claim 1 , wherein the dielectrics have relative density of 60% more when measured according to a buoyancy method of the oxide.

16 . The dielectric of claim 1 , wherein the oxide has a dielectric loss, tan δ, of 0.11 or less.

17 . The dielectric of claim 1 , wherein the oxide has a band gap of 3 eV or more.

18 . A capacitor comprising:
a first electrode; a second electrode; and a dielectric of claim 1 between the first electrode and the second electrode.

19 . A semiconductor device comprising the dielectric of claim 1 .

20 . A method of preparing a dielectric, the method comprising:
mixing an alkali metal or an alkaline earth metal with a transition metal precursor to prepare a mixture; performing a first thermal process on the mixture in an air atmosphere at a temperature in a range of 1,000° C. to 1,400° C. for 1 hour to 20 hours to prepare a first sintered material; molding and pressurizing the first sintered material to prepare a molded article; and performing a second thermal process on the molded article at a temperature of 1,400° C. or higher for 1 hour to 20 hours to prepare a second sintered material.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jung Doh Won
• Kwak Chan
• Do Euncheol
• Park Hyeon Cheol
• Yang Daejin
• Jeong Taewon
• Jo Giyoung

Classifications

• C01P2004/03

  obtained by SEM · CPC title

• H01G4/10

  Metal-oxide dielectrics {(H01G4/085 takes precedence)} · CPC title

• C01P2006/40

  Electric properties · CPC title

• C01P2004/61

  Micrometer sized, i.e. from 1-100 micrometer · CPC title

• C01P2002/72

  by d-values or two theta-values, e.g. as X-ray diagram · CPC title