Plasma processing apparatus and plasma processing method

Patent metadata

Field	Value
Publication number	US-11217430-B2
Application number	US-201916563528-A
Country	US
Kind code	B2
Filing date	Sep 6, 2019
Priority date	Oct 29, 2018
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

A plasma processing apparatus comprises a processing chamber, a gas supply unit, a power supply unit and a frequency control unit. The processing chamber accommodates a target object. The gas supply unit supplies a processing gas into the processing chamber. The power supply unit supplies a power of a predetermined frequency band into the processing chamber to generate plasma of the processing gas in the processing chamber. The frequency control unit sweeps a frequency of the power supplied into the processing chamber by the power supply unit from a first frequency to a second frequency at the time of generating the plasma of the processing gas in the processing chamber.

First claim

The invention claimed is:

1. A plasma processing apparatus comprising:
a processing chamber having a stage on which a target object is mounted;
a gas supply unit configured to supply a processing gas into the processing chamber; and
a frequency control unit configured to supply a power of a predetermined frequency band into the processing chamber to generate plasma of the processing gas in the processing chamber,
wherein the frequency control unit is configured to sweep a frequency of the supplied power from a first frequency to a second frequency and back to the first frequency multiple times, in generating the plasma of the processing gas in the processing chamber.

2. The plasma processing apparatus of claim 1 , wherein the frequency control unit sweeps the frequency of the power at a speed of 50 milliseconds or less per 100 MHz.

3. The plasma processing apparatus of claim 1 , wherein the predetermined frequency band is a microwave band between 2.4 GH to 2.5 GHz.

4. The plasma processing apparatus of claim 2 , wherein the predetermined frequency band is a microwave band between 2.4 GH to 2.5 GHz.

5. A plasma processing method comprising:
loading a target object into a stage of a processing chamber;
supplying a processing gas into the processing chamber; and
generating plasma of the processing gas in the processing chamber by supplying a power of a predetermined frequency band into the processing chamber,
wherein in said generating the plasma of the processing gas in the processing chamber, a frequency of the power supplied into the processing chamber is swept from a first frequency to a second frequency and back to the first frequency multiple times.

6. The plasma processing apparatus of claim 1 , wherein the first frequency and the second frequency are respectively a maximum value and a minimum value within a predetermined frequency bandwidth centered at a predetermined frequency, or the first frequency and the second frequency are respectively a minimum value and a maximum value within the predetermined frequency bandwidth centered at the predetermined frequency.

7. The plasma processing apparatus of claim 1 , wherein the first frequency is a minimum value within a predetermined frequency bandwidth centered at a predetermined frequency and the second frequency is a maximum value within the predetermined frequency bandwidth centered at the predetermined frequency, and
the frequency control unit is configured to sweep the frequency of the power multiple times such that the frequency of the power monotonically increases at a predetermined cycle from the first frequency to the second frequency.

8. The plasma processing apparatus of claim 1 , wherein the first frequency is a maximum value within a predetermined frequency bandwidth centered at a predetermined frequency and the second frequency is a minimum value within the predetermined frequency bandwidth centered at the predetermined frequency, and
the frequency control unit is configured to sweep the frequency of the power multiple times such that the frequency of the power monotonically decreases at a predetermined cycle from the first frequency to the second frequency.

9. The plasma processing apparatus of claim 1 , wherein the first frequency is a minimum value within a predetermined frequency bandwidth centered at a predetermined frequency and the second frequency is a maximum value within the predetermined frequency bandwidth centered at the predetermined frequency, and
the frequency control unit is configured to sweep the frequency of the power multiple times such that the frequency of the power monotonically increases at a predetermined cycle from the first frequency to the second frequency and then monotonically decreases at the predetermined cycle from the second frequency to the first frequency.

10. The plasma processing apparatus according to claim 1 , wherein the apparatus includes a microwave output device and a tuner which is positioned along a waveguide, and wherein the frequency control unit controls the microwave output device to sweep the frequency of the microwave output device, and wherein the frequency control unit is part of a control device which controls the tuner; and
wherein the control device is further configured to control the tuner to match an impedance of the microwave output device, after ignition of the plasma by repeating the sweep from the first frequency to the second frequency and back to the first frequency multiple times, to increase emission intensity of the plasma after the sweep multiple times.

11. The plasma processing apparatus according to claim 10 , wherein the frequency control unit is configured to control the sweep from the first frequency to the second frequency and back to the first frequency in a sawtooth pattern.

12. The plasma processing apparatus according to claim 1 , wherein the frequency control unit is configured to control the sweep from the first frequency to the second frequency and back to the first frequency in a sawtooth pattern.

13. A plasma processing apparatus comprising:
a processing chamber having a stage on which a target object is mounted;
a gas supply unit configured to supply a processing gas into the processing chamber; and
a frequency control unit configured to supply a power of a predetermined frequency band into the processing chamber to generate plasma of the processing gas in the processing chamber,
wherein the frequency control unit is configured to sweep a frequency of the supplied power monotonically from a first frequency to a second frequency, in generating the plasma of the processing gas in the processing chamber, and
wherein the frequency of the power is swept multiple times from the first frequency to the second frequency.

Assignees

• Tokyo Electron Ltd

Inventors

• Inoue Masaki
• Koyama Koji
• Sakai Yasutaka

Classifications

• H01J37/3244 Primary

  Gas supply means · CPC title

• H01J2237/334

  Etching · CPC title

• H01J37/32266 Primary

  Means for controlling power transmitted to the plasma · CPC title

• H05H1/46

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title