Systems and methods of optimal metrology guidance

US11216938B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11216938-B2
Application numberUS-201916554110-A
CountryUS
Kind codeB2
Filing dateAug 28, 2019
Priority dateAug 28, 2018
Publication dateJan 4, 2022
Grant dateJan 4, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.

First claim

Opening claim text (preview).

What is claimed is: 1. A metrology system comprising: a memory storing a set of instructions; and a processor configured to execute the set of instructions to cause the metrology system to: receive an acquired image of a sample; determine a set of image parameters based on an analysis of the acquired image; determine a set of model parameters based on the set of image parameters; generate a set of simulated images based on the set of model parameters; and output a set of guidance parameters based on an analysis of the set of simulated images and the set of model parameters. 2. The system of claim 1 , further comprising a charged particle beam apparatus configured to acquire an image of the sample. 3. The system of claim 1 , wherein the set of simulated images includes only a single simulated image. 4. The system of claim 1 , wherein the analysis comprises a comparison of information from the set of simulated images and the set of model parameters. 5. The system of claim 4 , wherein the information from the set of simulated images comprises critical dimension measurement results. 6. The system of claim 1 , wherein at least one of the set of image parameters, the set of model parameters, or the set of guidance parameters comprises a single parameter. 7. The system of claim 1 , wherein the set of image parameters comprises any of noise levels, pattern of interest, line roughness, or edge profile. 8. The system of claim 1 , wherein the set of model parameters is determined from the set of image parameters based on a quality metric. 9. The system of claim 8 , wherein the set of model parameters being determined from the set of image parameters is based on a plurality of quality metrics. 10. The system of claim 9 , wherein the plurality of quality metrics comprises any of local noise level, global noise level, edge profile statistics, or pattern structure. 11. The system of claim 1 , wherein the set of guidance parameters comprises any of recommended imaging parameter, critical dimension uniformity parameter, measurement precision, repeatability, or measurement accuracy. 12. The system of claim 1 , wherein the processor is configured to execute the set of instructions to further cause the metrology system to: receive auxiliary information associated with target parameters; and analyze the acquired image based on the received auxiliary information. 13. The system of claim 12 , wherein the target parameters comprise any of targeted pitch, targeted critical dimension uniformity, targeted pattern, or targeted measurement precision. 14. The system of claim 1 , wherein the processor is configured to execute the set of instructions to further cause the metrology system to: perform measurement of a critical dimension of the set of simulated images to obtain critical dimension measurements; and compare the critical dimension measurements with the set of model parameters. 15. A non-transitory computer readable medium comprising a set of instructions that are executable by one or more processors of an apparatus to cause the apparatus to perform a method comprising: receiving an acquired image of a sample; determining a set of image parameters based on an analysis of the acquired image; determining a set of model parameters based on the set of image parameters; generating a set of simulated images based on the set of model parameters; and providing a set of guidance parameters based on an analysis of the set of simulated images and the set of model parameters.

Assignees

Inventors

Classifications

  • Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

  • Image quality inspection · CPC title

  • Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title

  • Inspection of images, e.g. flaw detection · CPC title

  • from scanning electron microscope · CPC title

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What does patent US11216938B2 cover?
Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of mode…
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification G03F7/7065. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 04 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).