Inspection apparatus, inspection method and manufacturing method

Patent metadata

Field	Value
Publication number	US-9823586-B2
Application number	US-201615230937-A
Country	US
Kind code	B2
Filing date	Aug 8, 2016
Priority date	Aug 12, 2015
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

A product structure ( 407, 330 ′) is formed with defects ( 360 - 366 ). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure ( 604 ) to capture at least one diffraction pattern ( 606 ) formed by the radiation after scattering by the product structure. Reference data ( 612 ) describes a nominal product structure. At least one synthetic image ( 616 ) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects ( 660 - 666 ) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S( 1 )-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.

First claim

The invention claimed is:

1. An inspection apparatus for identifying a defect in a product structure, the apparatus comprising:
an illumination optical system configured to provide a spot of radiation on the product structure;
an image detector configured to capture a diffraction pattern formed by the spot of radiation scattering by the product structure; and
a processor configured to:
receive image data representing the captured diffraction pattern,
receive reference data describing a nominal product structure,
calculate, from the image data, a synthetic image of the product structure, and
compare data from the synthetic image with the reference data to identify the defect in the product structure.

2. The inspection apparatus of claim 1 , wherein:
the inspection apparatus is configured to obtain a plurality of diffraction patterns using a series of two or more spots of radiation displaced from one another but overlapping one another, and
the processor is configured to calculate the synthetic image using the plurality of diffraction patterns and to use a relative displacement of the two or more spots of radiation to perform phase retrieval.

3. The inspection apparatus of claim 2 , wherein the processor is further configured to use the reference data in the calculating the synthetic image.

4. The inspection apparatus of claim 3 , wherein the processor is further configured to use the reference data to calculate an initial phase estimate corresponding to the captured diffraction pattern.

5. The inspection apparatus of claim 1 , wherein:
the reference data is an image of the nominal product structure; and
the synthetic image is compared with the image of the nominal structure to identify the defect.

6. The inspection apparatus of claim 1 , further comprising a radiation source comprising a high harmonic generator and a pump laser.

7. The inspection apparatus of claim 1 , further comprising a wavelength selector for selecting a wavelength of the radiation.

8. The inspection apparatus of claim 1 , further comprising a radiation source, wherein the radiation source and the illumination optical system are configured to provide the radiation having a wavelength less than 125 nm.

9. The inspection apparatus of claim 1 , wherein the illumination optical system is configured to deliver the spot of radiation with a diameter less than 15 μm.

10. The inspection apparatus of claim 1 , wherein the inspection apparatus is configured to process automatically a series of product structures that have been formed on a semiconductor substrate.

11. A method of identifying a defect in a product structure, the method comprising:
providing radiation on the product structure;
capturing a diffraction pattern formed by the radiation scattering by the product structure;
receiving image data representing the captured diffraction pattern;
receiving reference data describing a nominal product structure;
calculating, from the image data, a synthetic image of the product structure; and
comparing data from the synthetic image with the reference data to identify a defect in the product structure.

12. The method of in claim 11 , further comprising:
repeating the providing and the capturing to obtain a plurality of diffraction patterns using a series of two or more spots of radiation displaced from one another but overlapping one another;
using the plurality of diffraction patterns to calculate the synthetic image; and
using a relative displacement of the spots to perform phase retrieval.

13. The method of claim 12 , further comprising using the reference data in the calculating the synthetic image.

14. The method of claim 13 , further comprising using the reference data to calculates an initial phase estimate corresponding to the captured diffraction pattern.

15. The method of claim 11 , wherein:
the reference data is an image of the nominal structure; and
the calculating comprises comparing the synthetic image with the image of the nominal structure to identify the defect.

16. The method of claim 11 , further comprising selecting a wavelength of the provided radiation from a range of wavelengths generated by a radiation source.

17. A method of manufacturing devices, comprising:
forming device features and metrology targets on a series of substrates by a lithographic process;
identifying defects on one or more processed substrates by:
providing a spot of radiation on the device features or the metrology targets;
capturing a diffraction pattern formed by the spot of radiation scattering by the device features or the metrology targets;
receiving reference data describing nominal device features or nominal metrology targets;
calculating from the captured diffraction pattern a synthetic image of the device features or metrology targets; and
comparing data from the synthetic image with the reference data to identify a defect in the device features or the metrology targets; and

adjusting parameters of the lithographic process for processing of further substrates based on the identified defect.

18. A non-transitory computer program product comprising machine-readable instructions for causing a processor to perform operations comprising:
providing a spot of radiation on a product structure;
capturing a diffraction pattern formed by the spot of radiation scattering by the product structure;
receiving reference data describing a nominal product structure;
calculating, from the captured diffraction pattern, a synthetic image of the product structure; and
comparing data from the synthetic image with the reference data to identify a defect in the product structure.

19. A method of manufacturing devices, comprising:
forming device features and metrology targets on a series of substrates by a lithographic process,
identifying defects on one or more processed substrates by:
providing a spot of radiation on the device features or the metrology targets;
capturing at least one diffraction pattern formed by the spot of radiation scattering by the device features or the metrology targets;
receiving reference data describing nominal device features or nominal metrology targets;
calculating, from the captured diffraction pattern, a synthetic image of the device features or the metrology targets; and
comparing data from the synthetic image with the reference data to identify a defect in the device features or the metrology targets, and

trigger an intervention in handling of the substrate having the identified defect based on the identifying defects.

20. The inspection apparatus of claim 1 , wherein the processor is further configured to use auxiliary data associated with the radiation in the calculating the synthetic image.

21. The inspection apparatus of claim 1 , further comprising a radiation source, wherein the radiation source and the illumination optical system are configured to provide the radiation having a wavelength less than 50 nm.

Assignees

• Asml Netherlands Bv

Inventors

• Quintanilha Richard

Classifications

• G21K2207/005

  Methods and devices obtaining contrast from non-absorbing interaction of the radiation with matter, e.g. phase contrast · CPC title

• G21K7/00

  Gamma- or X-ray microscopes · CPC title

• G03F7/7065 Primary

  Defects, e.g. optical inspection of patterned layer for defects · CPC title

• G03F1/24

  Reflection masks; Preparation thereof · CPC title

• G02B21/367

  providing an output produced by processing a plurality of individual source images, e.g. image tiling, montage, composite images, depth sectioning, image comparison · CPC title