Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

Patent metadata

Field	Value
Publication number	US-11211537-B2
Application number	US-202016862897-A
Country	US
Kind code	B2
Filing date	Apr 30, 2020
Priority date	Mar 22, 2011
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

First claim

I claim:

1. A light emitting device, comprising:
a silicon substrate;
a nickel silicide layer disposed over and in direct contact with the silicon substrate;
a first diffusion barrier layer disposed over and in direct contact with the nickel silicide layer;
a mirror layer disposed over and in direct contact with the diffusion barrier layer;
a second diffusion barrier layer disposed over and in direct contact with the mirror layer; and
a light emitting structure disposed over the second diffusion barrier layer.

2. The light emitting device of claim 1 , wherein the first diffusion barrier layer comprises an unconsumed portion of either a nickel layer or a nickel alloy layer from which the nickel silicide layer was at least partially formed.

3. The light emitting device of claim 1 , wherein the first diffusion barrier layer has a thickness between about 100 Angstroms and about 300 Angstroms.

4. The light emitting device of claim 1 , wherein the second diffusion barrier layer comprises nickel (Ni), tantalum (Ta), cobalt (Co), ruthenium (Ru), tantalum nitride (TaN), indium oxide (In 2 O 3 ), tungsten nitride (WN 2 ), titanium nitride (TiN), or a combination thereof.

5. The light emitting device of claim 1 , wherein the mirror layer comprises silver (Ag), aluminum (Al), or a combination thereof.

6. The light emitting device of claim 1 , further comprising a conductive material layer between the light emitting structure and the second diffusion barrier layer.

7. The light emitting device of claim 6 , wherein the conductive material layer comprises indium tin oxide, aluminum zinc oxide, fluorine-doped tin oxide, or a combination thereof.

8. The light emitting device of claim 1 , wherein the light emitting structure includes a first semiconductor material, a second semiconductor material, and an active region disposed between the first semiconductor material and the second semiconductor material.

9. The light emitting device of claim 8 , wherein the first semiconductor material and the second semiconductor material each comprise one of an N-type gallium nitride (GaN) material, a P-type GaN material, gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), gallium(III) phosphide (GaP), zinc selenide (ZnSe), boron nitride (BN), aluminum gallium nitride (AlGaN), or a combination thereof.

10. The light emitting device of claim 8 , wherein the active region comprises a single quantum well (“SQW”), multiple quantum wells (“MQWs”), aluminum gallium indium phosphide (AlGaInP), aluminum gallium indium nitride (AlGaInN), or a combination thereof.

11. The light emitting device of claim 8 , wherein the active region comprises an InGaN SQW, InGaN/GaN MQWs, an InGaN bulk material, or a combination thereof.

12. The light emitting device of claim 8 , wherein the active region has a thickness between about 10 nanometers and about 500 nanometers.

13. The light emitting device of claim 1 , wherein second diffusion barrier layer includes a first bonding portion and a second bonding portion, wherein the first bonding portion is on a lower surface of the light emitting structure, and wherein the second bonding portion is on a sidewall of the light emitting structure.

14. The light emitting device of claim 13 , further comprising a passivation material on the sidewall of the light emitting structure, the passivation material abutting the second bonding portion.

15. The light emitting device of claim 1 , further comprising at least one electrode disposed over the light emitting structure.

16. The light emitting device of claim 15 , wherein the at least one electrode comprises aluminum (Al), titanium (Ti), or a combination thereof.

17. A light emitting device, comprising:
a silicon substrate;
a nickel silicide layer disposed over and in direct contact with the silicon substrate;
a first diffusion barrier layer disposed over and in direct contact with the nickel silicide layer;
a mirror layer disposed over and in direct contact with the diffusion barrier layer;
a second diffusion barrier layer disposed over and in direct contact with the mirror layer;
a conductive material layer disposed over and in direct contact with the second diffusion barrier layer; and
a light emitting structure disposed over and in direct contact with the conductive material layer,
wherein the light emitting structure includes a first semiconductor material, a second semiconductor material, and an active region disposed between the first semiconductor material and the second semiconductor material.

18. The light emitting device of claim 17 , further comprising at least one electrode disposed over the light emitting structure.

Assignees

• Micron Technology Inc

Inventors

• Bernhardt Michael J

Classifications

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/036

  of packages · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/01

  Manufacture or treatment · CPC title