Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

Patent metadata

Field	Value
Publication number	US-9455386-B2
Application number	US-201414456730-A
Country	US
Kind code	B2
Filing date	Aug 11, 2014
Priority date	Mar 22, 2011
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

First claim

I claim:

1. A lighting emitting die, comprising:
a light emitting structure;
a silicon substrate spaced apart from the light emitting structure; and
a bonding stack between the light emitting structure and the silicon substrate, the bonding stack mechanically coupling the light emitting structure to the silicon substrate, wherein the bonding stack includes
a barrier material on the light emitting structure,
a bonding material spaced apart from the barrier material, the bonding material containing nickel (Ni),
a mirror material directly between the barrier material and the bonding material,
a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material,
a first bonding portion on a surface of the light emitting structure, and
a second bonding portion on a sidewall of the light emitting structure.

2. The light emitting die of claim 1 wherein:
the barrier material contains nickel (Ni); and
the mirror material contains silver (Ag).

3. The light emitting die of claim 1 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
the bonding stack consists essentially of the barrier material, the bonding material, the mirror material, and the nickel silicide material.

4. The light emitting die of claim 1 wherein:
the light emitting die further includes a conductive material between the light emitting structure and the bonding stack, the conductive material containing at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;
the silicon substrate includes a P-type silicon substrate;
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
the bonding stack consists essentially of the barrier material, the bonding material, the mirror material, and the nickel silicide material.

5. The light emitting die of claim 1 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
the bonding material has a thickness of about 30 Angstroms.

6. The light emitting die of claim 1 , further comprising
a passivation material on the sidewall of the light emitting structure, the passivation material abutting the second bonding portion.

7. A lighting emitting device, comprising:
a light emitting structure having an opening and a sidewall in the opening;
a silicon substrate spaced apart from the light emitting structure;
a bonding stack between the light emitting structure and the silicon substrate, wherein the bonding stack has a first portion on a surface outside of the opening of the light emitting structure, and a second portion on at least a portion of the sidewall in the opening, and wherein the bonding stack includes—
a barrier material over the light emitting structure,
a bonding material comprising nickel (Ni),
a mirror material spacing the barrier material apart from the bonding material, and
a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material.

8. The lighting emitting device of claim 7 wherein the light emitting structure includes a first semiconductor material, a second semiconductor material, and an active region, and wherein the portion of the sidewall extends along at least the first semiconductor material.

9. The lighting emitting device of claim 7 , further comprising a substrate material, wherein the light emitting structure is on the substrate material, and wherein the opening extends into the substrate material.

10. The lighting emitting device of claim 7 , further comprising a conductive material between the barrier material and the light emitting structure, wherein the opening and the sidewall extend through the conductive material.

11. The lighting emitting device of claim 7 , further comprising a passivation material in the opening of the light emitting structure and abutting the second portion of the bonding stack.

12. The light emitting device of claim 7 wherein:
the barrier material contains nickel (Ni); and
the mirror material contains silver (Ag).

13. The light emitting device of claim 7 , further comprising a conductive material between the light emitting structure and the bonding stack, the conductive material containing at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide.

14. The light emitting device of claim 7 wherein the silicon substrate includes a P-type silicon substrate.

15. A lighting emitting die, comprising:
a light emitting structure having an opening and a sidewall in the opening;
a conductive material on a portion of the light emitting structure that is outside of the opening;
a silicon substrate spaced apart from the light emitting structure; and
a bonding stack between the light emitting structure and the silicon substrate, the bonding stack mechanically coupling the light emitting structure to the silicon substrate, wherein the bonding stack includes—
a barrier material on the light emitting structure,
a bonding material spaced apart from the barrier material, the bonding material containing nickel (Ni),
a mirror material directly between the barrier material and the bonding material,
a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material,
a first bonding portion on the conductive material, and
a second bonding portion on the sidewall of the light emitting structure.

16. The light emitting die of claim 15 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
the bonding stack consists essentially of the barrier material, the bonding material, the mirror material, and the nickel silicide material.

17. The light emitting die of claim 15 , further comprising a passivation material on the sidewall of the light emitting structure, the passivation material abutting the second bonding portion.

18. The lighting emitting die of claim 17 , further comprising a substrate material, wherein:
the light emitting structure is on the substrate material;
the opening extends at least to the substrate material; and
a portion of the passivation material abuts the substrate material.

19. The lighting emitting die of claim 18 , further comprising a buffer material between the substrate material and the light emitting structure.

20. The light emitting die of claim 15 wherein the conductive material contains at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide.

Assignees

• Micron Technology Inc

Inventors

• Bernhardt Michael J

Classifications

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/036

  of packages · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/01

  Manufacture or treatment · CPC title