Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

Patent metadata

Field	Value
Publication number	US-9842976-B2
Application number	US-201615254483-A
Country	US
Kind code	B2
Filing date	Sep 1, 2016
Priority date	Mar 22, 2011
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

First claim

I claim:

1. A light emitting die, comprising:
a light emitting structure;
a silicon substrate spaced apart from the light emitting structure;
a bonding stack between the light emitting structure and the silicon substrate, the bonding stack mechanically coupling the light emitting structure to the silicon substrate,
wherein the bonding stack includes:
a barrier material on the light emitting structure;
a bonding material spaced apart from the barrier material, the bonding material containing nickel (Ni) and being the outermost layer of the bonding stack,
a mirror material directly between the barrier material and the bonding material; and
a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material.

2. The light emitting die of claim 1 wherein:
the barrier material contains nickel (Ni); and
the mirror material contains silver (Ag).

3. The light emitting die of claim 1 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
the bonding stack consists essentially of the barrier material, the bonding material, the mirror material, and the nickel silicide material.

4. The light emitting die of claim 1 wherein:
the light emitting die further includes a conductive material between the light emitting structure and the bonding stack, the conductive material containing at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;
the silicon substrate includes a P-type silicon substrate;
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
the bonding stack consists essentially of the barrier material, the bonding material, the mirror material, and the nickel silicide material.

5. The light emitting die of claim 1 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
the bonding material has a thickness of about 30 Angstroms.

6. The light emitting die of claim 1 wherein:
the bonding stack includes a first bonding portion and a second bonding portion;
the first bonding portion is on a surface of the light emitting structure; and
the second bonding portion is on a sidewall of the light emitting structure.

7. The light emitting die of claim 1 wherein:
the bonding stack includes a first bonding portion and a second bonding portion;
the first bonding portion is on a surface of the light emitting structure;
the second bonding portion is on a sidewall of the light emitting structure; and
the light emitting die further includes a passivation material on the sidewall of the light emitting structure, the passivation material abutting the second bonding portion.

8. The device of claim 1 wherein the nickel silicide material is formed by at least partially and only consuming the bonding material and silicon substrate.

9. A method for manufacturing a lighting emitting device, comprising:
forming a light emitting structure on a growth substrate material;
depositing a barrier material, a mirror material, and a bonding material on the light emitting structure, the bonding material containing nickel (Ni);
placing the light emitting structure onto a silicon carrier substrate such that the bonding material directly contacts the silicon carrier substrate; and
bonding the light emitting structure and the silicon carrier substrate via forming a nickel silicide (NiSi) material at an interface between the silicon carrier substrate and the bonding material.

10. The method of claim 9 wherein bonding the light emitting structure and the silicon carrier substrate includes annealing the light emitting structure and the silicon substrate.

11. The method of claim 10 wherein:
forming the light emitting structure includes forming N-type gallium nitride (GaN), GaN/indium gallium nitride (InGaN) multiple quantum wells, and P-type GaN on the growth substrate material in sequence and subsequently removing the growth substrate material from the N-type GaN;
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
annealing the light emitting structure and the silicon carrier substrate includes:
heating the light emitting structure and the silicon carrier substrate to a temperature from about 300° C. to about 450° C.; and
maintaining the temperature for a heating period of about 1 to 30 minutes under a bonding pressure of about 50 mPa to about 100 mPa.

12. The method of claim 10 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
annealing the light emitting structure and the silicon carrier substrate includes forming the nickel silicide (NiSi) material at the interface between the silicon carrier substrate and the bonding material without completely consuming the bonding material.

13. The method of claim 10 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
annealing the light emitting structure and the silicon carrier substrate includes forming the nickel silicide (NiSi) material at the interface between the silicon carrier substrate and the bonding material without completely consuming the nickel (Ni) contained in the bonding material.

14. The method of claim 10 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
annealing the light emitting structure and the silicon carrier substrate includes:
maintaining a thickness of the bonding material greater than about 30 Angstroms after forming the nickel silicide (NiSi) material.

15. The method of claim 10 wherein:
the barrier material contains nickel (Ni);
the mirror material contains silver (Ag); and
annealing the light emitting structure and the silicon carrier substrate includes:
reacting a portion of the nickel (Ni) contained in the bonding material with the silicon (Si) contained in the silicon carrier substrate to form the nickel silicide (NiSi) material; and
bonding the silicon carrier substrate to the light emitting structure with the formed nickel silicide (NiSi) material.

16. The method of claim 9 wherein:
the barrier material contains nickel (Ni); and
the mirror material contains silver (Ag).

17. A method for manufacturing a lighting emitting device, comprising:
depositing a barrier material, a mirror material, and a bonding material on a light emitting structure, the bonding material containing nickel (Ni);
contacting the deposited bonding material with a carrier containing silicon (Si);
directly reacting the nickel (Ni) in the bonding material with the silicon (Si) in the carrier at a bonding temperature, under a bonding pressure, and for a bonding period; and
adjusting at least one of the bonding temperature, the bonding period, and the bonding pressure based on a target thickness of the bonding material remaining after the reaction.

18. The method of claim 17 wherein the thickness of the bonding material remaining after the reaction is greater than about 30 Angstroms.

19. The method of claim 17 , wherein the bonding material remaining after the reaction acts as a barrier material.

20. The method of claim 17 wherein reacting the nickel (Ni) in the bonding material with the silicon (Si) in the carrier includes forming nickel silicide (NiSi) at an interface between the carrier and the bonding material remaining after the reaction.

21. The method of claim 17 wherein:
the barrier material contains nickel (Ni);

Assignees

• Micron Technology Inc

Inventors

• Bernhardt Michael J

Classifications

• H01L33/06

  Electricity · mapped topic

• H01L33/42

  Electricity · mapped topic

• H01L33/20

  Electricity · mapped topic

• H01L33/62 Primary

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic