Three-dimensional flash memory device with increased storage density

Patent metadata

Field	Value
Publication number	US-11211400-B2
Application number	US-201916699121-A
Country	US
Kind code	B2
Filing date	Nov 29, 2019
Priority date	Jun 28, 2019
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

A 3D flash memory device includes a substrate having a substantial planar surface. A plurality of active columns of semiconducting material is disposed above the substrate. Each of the plurality of active columns extends along a first direction orthogonal to the planar surface of the substrate. The plurality of active columns is arranged in a two-dimensional array. Each of the plurality of active columns may comprise multiple local bit lines and multiple local source lines extending along the first direction. Multiple channel regions are disposed between the multiple local bit lines and multiple local source lines. A word line stack wraps around the plurality of active columns. A charge-storage element is disposed between the word line stack and each of the plurality of active columns.

First claim

What is claimed is:

1. A three-dimensional flash memory device, comprising:
a substrate having a substantial planar surface;
a plurality of active columns of semiconducting material disposed above said substrate, each of said plurality of active columns extending along a first direction orthogonal to said planar surface of said substrate, wherein said plurality of active columns is arranged in a two-dimensional array, and wherein each of said plurality of active columns comprises at least two local bit lines and at least one local source line extending along said first direction;
a first channel region between a first local bit line of said at least two local bit lines and said at least one local source line;
a second channel region between a second local bit line of said at least two local bit lines and said at least one local source line;
a word line stack wrapping around said plurality of active columns; and
a charge-storage element disposed between said word line stack and each of said plurality of active columns.

2. The three-dimensional flash memory device according to claim 1 , wherein said word line stack extends along a second direction that is parallel to said planar surface of said substrate.

3. The three-dimensional flash memory device according to claim 2 , wherein said at least two local bit lines are electrically coupled to two global bit lines, respectively.

4. The three-dimensional flash memory device according to claim 3 , wherein said two global bit lines extend along a third direction that is not parallel to said second direction and is parallel to said planar surface of said substrate.

5. The three-dimensional flash memory device according to claim 3 , wherein each of said two global bit lines is electrically coupled to a bit-line access select transistor, wherein said bit-line access select transistor connects each of said two global bit lines to each of said at least two local bit lines.

6. The three-dimensional flash memory device according to claim 1 , wherein said charge-storage element comprises a charge-trapping layer.

7. The three-dimensional flash memory device according to claim 6 , wherein said charge-trapping layer comprises silicon nitride.

8. The three-dimensional flash memory device according to claim 1 further comprising:
a channel breaker separating said first channel region from said second channel region.

9. The three-dimensional flash memory device according to claim 1 , wherein said plurality of active columns is arranged in a staggered manner.

10. The three-dimensional flash memory device according to claim 1 , wherein said substrate comprises a silicon substrate.

11. A three-dimensional flash memory device, comprising:
a substrate having a substantial planar surface;
a plurality of active columns of semiconducting material disposed above said substrate, each of said plurality of active columns extending along a first direction orthogonal to said planar surface of said substrate, wherein said plurality of active columns is arranged in a two-dimensional array, and wherein each of said plurality of active columns comprises multiple local bit lines and multiple local source lines extending along said first direction;
multiple channel regions between said multiple local bit lines and multiple local source lines;
a word line stack wrapping around said plurality of active columns; and
a charge-storage element disposed between said word line stack and each of said plurality of active columns.

12. The three-dimensional flash memory device according to claim 11 , wherein said word line stack extends along a second direction that is parallel to said planar surface of said substrate.

13. The three-dimensional flash memory device according to claim 12 , wherein said multiple local bit lines are electrically coupled to multiple global bit lines, respectively.

14. The three-dimensional flash memory device according to claim 13 , wherein said multiple global bit lines extend along a third direction that is not parallel to said second direction and is parallel to said planar surface of said substrate.

15. The three-dimensional flash memory device according to claim 13 , wherein each of said multiple global bit lines is electrically coupled to a bit-line access select transistor, wherein said bit-line access select transistor connects each of said multiple global bit lines to each of said multiple local bit lines.

16. The three-dimensional flash memory device according to claim 11 , wherein said charge-storage element comprises a charge-trapping layer.

17. The three-dimensional flash memory device according to claim 16 , wherein said charge-trapping layer comprises silicon nitride.

18. The three-dimensional flash memory device according to claim 11 further comprising:
a channel breaker between two of said multiple local bit lines.

19. The three-dimensional flash memory device according to claim 11 , wherein said plurality of active columns is arranged in a staggered manner.

20. The three-dimensional flash memory device according to claim 11 , wherein said substrate comprises a silicon substrate.

Assignees

• Yangtze Memory Tech Co Ltd

Inventors

• She Min
• Tang Qiang

Classifications

• H10W20/43

  Layouts of interconnections · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H01L23/528

  Electricity · mapped topic

• H01L29/518

  Electricity · mapped topic

• H01L27/11565

  Electricity · mapped topic