Semiconductor memory device

Patent metadata

Field	Value
Publication number	US-10103155-B2
Application number	US-201715449481-A
Country	US
Kind code	B2
Filing date	Mar 3, 2017
Priority date	Mar 9, 2016
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.

First claim

What is claimed is:

1. A semiconductor memory device, comprising:
a first semiconductor member and a second semiconductor member being separated in a first direction and extending in a second direction, the second direction crossing the first direction;
an insulating member provided between the first semiconductor member and the second semiconductor member;
a plurality of electrode films arranged to be separated from each other along the second direction, each of the electrode films surrounding the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction;
a first electrode provided between the first semiconductor member and one of the plurality of electrode films; and
a second electrode provided between the second semiconductor member and the one of the plurality of electrode films.

2. The device according to claim 1 , wherein
the first electrode is disposed also at two sides of the first semiconductor member in a third direction, the third direction crossing a plane including the first direction and the second direction,
the second electrode is disposed also at two sides of the second semiconductor member in the third direction, and
the insulating member is disposed also between the first electrode and the second electrode at the two sides of the first semiconductor member in the third direction and the two sides of the second semiconductor member in the third direction.

3. The device according to claim 2 , further comprising:
a third semiconductor member extending in the second direction and being arranged in the third direction when viewed from the first semiconductor member; and
a fourth semiconductor member extending in the second direction, being arranged in the third direction when viewed from the second semiconductor member, and being arranged in the first direction when viewed from the third semiconductor member,
one portion of the insulating member being disposed between the third semiconductor member and the fourth semiconductor member,
each of the electrode films surrounding the first semiconductor member, the second semiconductor member, the third semiconductor member, the fourth semiconductor member, and the insulating member when viewed from the second direction.

4. The device according to claim 3 , wherein a length in the first direction of a first portion of the insulating member is longer than a length in the first direction of a second portion of the insulating member, the first portion being a portion positioned between the second portion and a third portion, the second portion being disposed between the first semiconductor member and the second semiconductor member, the third portion being disposed between the third semiconductor member and the fourth semiconductor member.

5. The device according to claim 1 , wherein an outer edge of the first semiconductor member on the electrode film side and an outer edge of the second semiconductor member on the electrode film side when viewed from the second direction are portions of one circle.

6. The device according to claim 1 , wherein an outer edge of the first electrode on the electrode film side and an outer edge of the second electrode on the electrode film side when viewed from the second direction are portions of one circle.

7. The device according to claim 1 , wherein a distance between the first electrode and the second electrode is longer than a distance between the first semiconductor member and the second semiconductor member.

8. The device according to claim 1 , further comprising:
a first interconnect connected to the first semiconductor member but not connected to the second semiconductor member; and
a second interconnect connected to the second semiconductor member but not connected to the first semiconductor member.

9. The device according to claim 1 , wherein when viewed from the second direction, an interface between the insulating member and the first semiconductor member and an interface between the insulating member and the first electrode are disposed on a first straight line, and an interface between the insulating member and the second semiconductor member and an interface between the insulating member and the second electrode are disposed on a second straight line.

10. A semiconductor memory device, comprising:
an electrode film including a first portion and a second portion separated from each other along a first direction;
a first insulating member disposed between the first portion and the second portion;
a first semiconductor member and a second semiconductor member extending in a second direction and being disposed at positions having the first insulating member interposed between the positions, the second direction crossing the first direction;
a first electrode disposed between the first portion and the first semiconductor member; and
a second electrode disposed between the second portion and the second semiconductor member,
when viewed from the second direction, an interface between the first insulating member and the first semiconductor member and an interface between the first insulating member and the first electrode being disposed on a first straight line, and an interface between the first insulating member and the second semiconductor member and an interface between the first insulating member and the second electrode being disposed on a second straight line.

11. The device according to claim 10 , wherein an outer edge of the first semiconductor member on the first portion side and an outer edge of the second semiconductor member on the second portion side when viewed from the second direction are portions of the same circle.

12. The device according to claim 10 , wherein an outer edge of the first electrode on the first portion side and an outer edge of the second electrode on the second portion side when viewed from the second direction are portions of the same circle.

13. The device according to claim 10 , further comprising a second insulating member extending in the second direction, contacting the first insulating member, and being arranged in a third direction when viewed from the first insulating member, the third direction crossing a plane including the first direction and the second direction,
a length in the first direction of the second insulating member being longer than a length in the first direction of the first insulating member.

14. The device according to claim 13 , wherein a protruding portion is formed in an end portion in the third direction of the second insulating member, a ridgeline of the protruding portion extending in the second direction.

15. A semiconductor memory device, comprising:
a first semiconductor member and a second semiconductor member being separated from each other along a first direction, and extending in a second direction, the second direction crossing the first direction;
an insulating member provided between the first semiconductor member and the second semiconductor member, a length in a third direction of the insulating member being longer than a length in the third direction of the first semiconductor member and longer than a length in the third direction of the second semiconductor member, the third direction crossing a plane including the first direction and the second direction;
an electrode film surrounding a first structure body when viewed from the second direction, the first structure body being made of the first semiconductor member, the insulating member, and the second semiconductor member;
a first electrode provided between the first semiconductor member and the elec

Assignees

• Toshiba Memory Corp

Inventors

• Sakaike Kohei
• Iwamoto Toshiyuki
• Kato Tatsuya
• Kikutani Keisuke
• Arai Fumitaka
• Nagashima Satoshi
• Sakata Koichi
• Watanabe Yuta

Classifications

• H01L27/11524

  Electricity · mapped topic

• H01L27/11556

  Electricity · mapped topic

• H01L27/11519 Primary

  Electricity · mapped topic

• H10B41/35

  with a cell select transistor, e.g. NAND · CPC title

• H10B41/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title