Vacuum-integrated hardmask processes and apparatus

Patent metadata

Field	Value
Publication number	US-11209729-B2
Application number	US-201916691508-A
Country	US
Kind code	B2
Filing date	Nov 21, 2019
Priority date	Jan 31, 2014
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

First claim

What is claimed is:

1. A semiconductor processing apparatus, comprising:
a dry deposition module comprising a reactor chamber for dry depositing an EUV-sensitive organometallic film on a semiconductor substrate; and
a dry development module for removing an unexposed portion of a pattern formed in the organometallic film on the substrate by EUV exposure of a portion of the organometallic film;
a controller including one or more memory devices, one or more processors and system control software coded with instructions for conducting photoresist-less metal mask formation, the instructions comprising instructions for,
in the deposition module, dry depositing the EUV-sensitive organometallic film on a semiconductor substrate;
following the dry deposition, transferring under vacuum the substrate to a patterning module comprising an Extreme Ultraviolet (EUV) photolithography tool for EUV lithographic patterning of the organometallic film by exposure of a portion of the organometallic film to EUV radiation, resulting in a pattern of exposed and the unexposed portions in the organometallic film; and
in the dry development module, obtaining the semiconductor substrate following EUV lithographic patterning of the organometallic film, and dry developing the pattern in the organometallic film with a non-plasma treatment to remove the unexposed portion of the organometallic film to form a metal-containing hardmask.

2. The apparatus of claim 1 , further comprising vacuum transfer module interfaces connecting the deposition and development modules of the processing apparatus.

3. The apparatus of claim 1 , further comprising the organometallic film patterning module comprising the Extreme Ultraviolet (EUV) photolithography tool with a source of sub-30 nm wavelength radiation.

4. The apparatus of claim 3 , further comprising vacuum transfer module interfaces connecting the deposition, patterning and development modules of the processing apparatus.

5. The apparatus of claim 3 , wherein the EUV photolithography tool source emits radiation having a wavelength in the range of 10 to 20 nm.

6. The apparatus of claim 5 , wherein the EUV photolithography tool source emits radiation having a wavelength of 13.5 nm.

7. The apparatus of claim 1 , wherein the organometallic film is an organotin film.

8. The apparatus of claim 1 , wherein the dry development module further comprises a heater to heat the substrate to volatilize unexposed regions of the organometallic film.

9. A method of processing a semiconductor substrate, comprising:
dry depositing an EUV-sensitive an organometallic film on a semiconductor substrate;
obtaining EUV lithographic patterning of the organometallic film by exposure of a portion of the organometallic film to EUV radiation, resulting in a pattern of exposed and unexposed portions in the organometallic film; and
dry developing the pattern in the organometallic film with a non-plasma treatment to remove the unexposed portion of the organometallic film to form a metal-containing hardmask;
wherein the semiconductor substrate is a silicon wafer including partially-formed integrated circuits, and the method further comprising:
prior to the deposition, providing the semiconductor substrate in a first reactor chamber for the organometallic film deposition; and
following the deposition, transferring the substrate under vacuum to a EUV lithography processing chamber for the patterning.

10. The method of claim 9 , further comprising, prior to entering the EUV lithography processing chamber, outgassing the substrate.

11. The method of claim 9 , wherein the EUV lithography processing chamber has a EUV photolithography source that emits radiation having a wavelength in the range of 10 to 20 nm.

12. The method of claim 11 , wherein the EUV photolithography tool source emits radiation having a wavelength of 13.5 nm.

13. The method of claim 9 , wherein the organometallic film is an organotin film.

14. The method of claim 9 , wherein the dry development of the pattern comprises heating the substrate to volatilize unexposed regions of the organometallic film.

Assignees

• Lam Res Corp

Inventors

• Marks Jeffrey
• Antonelli George Andrew
• Gottscho Richard A
• Hausmann Dennis M
• Lavoie Adrien
• Knisley Thomas Joseph
• Reddy Sirish K
• Varadarajan Bhadri N
• Kolics Artur

Classifications

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P76/405 Primary

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P72/0471

  comprising at least one ion or electron beam chamber · CPC title

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• H10P72/0452

  characterised by the layout of the process chambers · CPC title