In-situ full wafer metrology system

Patent metadata

Field	Value
Publication number	US-11204312-B2
Application number	US-202016818499-A
Country	US
Kind code	B2
Filing date	Mar 13, 2020
Priority date	Mar 13, 2020
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

Full wafer in-situ metrology chambers and methods of use are described. The metrology chambers include a substrate support and a sensor bar that are rotatable relative to each other. The sensor bar includes a plurality of sensors at different radii from a central axis.

First claim

What is claimed is:

1. An in-situ metrology chamber comprising:
a chamber body having a bottom and sidewalls bounding an inner volume, the sidewalls having an opening formed therethrough;
a sensor lid bounding the inner volume, the sensor lid having an inside surface and an outside surface;
a substrate support within the inner volume, the substrate support having a support surface facing the inside surface of the sensor lid;
a sensor bar connected to the sensor lid, the sensor bar comprising a plurality of sensors facing the support surface of the substrate support, the plurality of sensors positioned along the sensor bar at different radii from a central axis; and
a door configured to open and close the opening in sidewalls,
wherein one of the sensor bar or substrate support is configured to rotate around a central axis relative to the other of the sensor bar or substrate support.

2. The chamber of claim 1 , further comprising a controller connected to one or more of the plurality of sensors or the substrate support.

3. The chamber of claim 2 , wherein the substrate support is configured to rotate around the central axis.

4. The chamber of claim 3 , wherein the controller is configured to rotate the substrate support at a predetermined rate and collect data from the plurality of sensors during rotation.

5. The chamber of claim 2 , wherein the sensor bar is configured to rotate around the central axis.

6. The chamber of claim 5 , wherein the controller is configured to rotate the sensor bar at a predetermined rate and collect data from the plurality of sensors during rotation.

7. The chamber of claim 1 , wherein the plurality of sensors comprise one or more reflectometers.

8. The chamber of claim 7 , wherein there are in the range of 3 to 20 reflectometers.

9. The chamber of claim 7 , wherein there are in the range of 6 to 10 reflectometers.

10. The chamber of claim 1 , wherein the plurality of sensors comprise one or more ellipsometers.

11. The chamber of claim 10 , wherein there are in the range of 1 to 6 ellipsometers.

12. The chamber of claim 10 , wherein there are 3 or 4 ellipsometers.

13. The chamber of claim 1 , wherein the substrate support further comprises a heater.

14. The chamber of claim 13 , further comprising at least one temperature sensor configured to measure a temperature of a substrate on the substrate support.

15. A non-transitory computer readable medium including instructions, that, when executed by a controller of a metrology chamber, causes the chamber to perform one or more operations selected from: rotating one of a substrate support or sensor bar around a central axis relative to the other of the substrate support or sensor bar; obtain data from a plurality of sensors during rotation of the substrate support to generate a radial-position rotation-angle dependent data profile for each sensor at different radii; and extrapolate data at a position between sensor radii from the radial-position rotation-angle dependent data profiles, wherein the plurality of sensors comprise at least one reflectometer and at least one ellipsometer configured to measure a property of a substrate on the substrate support, and the instructions cause the chamber to further perform one or more operations selected from: determining a thickness of a film on a substrate from the radial-position rotation-angle dependent data profiles.

16. A method of measuring a film on a substrate, the method comprising:
rotating one of a substrate support or sensor bar around a central axis relative to the other of the substrate support or sensor bar;
collecting data from the substrate using at least one sensor positioned on the sensor bar, the at least one sensor configured to measure the film on the substrate and generate radial-position rotation-angle dependent data profile from each sensor; and
determining a property of the film over the substrate based on the radial-position rotation-angle dependent data profiles,
wherein the at least one sensor comprises at least one reflectometer and at least one ellipsometer, each of the reflectometers and each of the ellipsometers positioned at different radii than other reflectometers or ellipsometers, respectively, relative to the central axis.

17. The chamber of claim 1 , wherein the substrate support comprises a thermally insulating material.

Assignees

• Applied Materials Inc

Inventors

• Sade Ami
• Egan Todd
• Assaf Shay
• Newman Jacob

Classifications

• H10P74/23 Primary

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01N21/55

  Specular reflectivity · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N2021/0106

  General arrangement of respective parts · CPC title