Method and apparatus improving gate oxide reliability by controlling accumulated charge

Patent metadata

Field	Value
Publication number	US-11201245-B2
Application number	US-202016739081-A
Country	US
Kind code	B2
Filing date	Jan 9, 2020
Priority date	Jul 11, 2005
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

First claim

What is claimed is:

1. A radio frequency (RF) module comprising:
at least one integrated circuit chip; and
at least one field effect transistor, the at least one field effect transistor including a gate having a gate oxide, a drain, a source, and a body;
wherein the at least one field effect transistor comprises an N-type metal oxide semiconductor (NMOS) field effect transistor in which a thickness of the gate oxide is less than approximately 8.2 nm;
wherein, during at least a portion of an off state, the body of the at least one field effect transistor is to be electrically biased to have a voltage level substantially more negative than a lowest voltage level of the following: ground, a direct current (DC) voltage level of the source of the at least one field effect transistor, and a DC voltage level of the drain of the at least one field effect transistor;
wherein the body of the at least one field effect transistor during the at least a portion of the off state is to be electrically biased so as to improve linearity of the at least one field effect transistor relative to the body of the at least one field effect transistor not electrically biased to have the voltage level substantially more negative than the lowest voltage level of the following: ground, the DC voltage level of the source of the at least one field effect transistor, and the DC voltage level of the drain of the at least one field effect transistor.

2. The RF module of claim 1 , wherein, during the at least a portion of the off state, the gate of the at least one field effect transistor is to be electrically biased to have a DC voltage level approximately 2.5 volts below ground.

3. The RF module of claim 1 , wherein the at least one field effect transistor is implemented in a silicon on insulator technology.

4. The RF module of claim 1 , wherein the voltage level substantially more negative than the lowest voltage level is more than one volt more negative than the lowest voltage level.

5. The RF module of claim 1 , wherein the body of the at least one field effect transistor is electrically coupled to an accumulated charge sink.

6. The RF module of claim 1 , wherein the body of the at least one field effect transistor during the at least a portion of the off state is to be electrically biased so as to reduce non-linear harmonic and/or intermodulation distortion of RF signals to be propagated by the RF module, reduction via the at least one field effect transistor being relative to the body of the at least one field effect transistor not electrically biased to have the voltage level substantially more negative than the lowest voltage level of the following: ground, the DC voltage level of the source of the at least one field effect transistor, and the DC voltage level of the drain of the at least one field effect transistor.

7. The RF module of claim 6 , wherein a power of a third harmonic of the RF signals to be propagated via the RF module is to be lower than −30 dBm at an operating power of +35 dBm.

8. The RF module of claim 1 , wherein the at least one field effect transistor is included in a stack of field effect transistors included in an RF switch, the RF switch being included in the at least one integrated circuit chip.

9. The RF module of claim 1 , wherein the body of the at least one field effect transistor is electrically coupled to at least two accumulated charge sinks.

10. A communication device comprising:
at least one integrated circuit chip; and
at least one radio frequency (RF) switch comprising at least one field effect transistor, the at least one field effect transistor including a gate having a gate oxide, a drain, a source, and a body;
wherein the at least one field effect transistor comprises an N-type metal oxide semiconductor (NMOS) field effect transistor in which a thickness of the gate oxide is less than approximately 8.2 nm;
wherein, during at least a portion of an off state, the body of the at least one field effect transistor is to be electrically biased to have a voltage level substantially more negative than a lowest voltage level of the following: ground, a direct current (DC) voltage level of the source of the at least one field effect transistor, and a DC voltage level of the drain of the at least one field effect transistor;
wherein the body of the at least one field effect transistor during the at least a portion of the off state is to be electrically biased so as to improve linearity of the at least one field effect transistor relative to the body of the at least one field effect transistor not electrically biased to have the voltage level substantially more negative than the lowest voltage level of the following: ground, the DC voltage level of the source of the at least one field effect transistor, and the DC voltage level of the drain of the at least one field effect transistor.

11. The communication device of claim 10 , wherein, during the at least a portion of the off state, the gate of the at least one field effect transistor is to be electrically biased to have a DC voltage level approximately 2.5 volts below ground.

12. The communication device of claim 10 , wherein the at least one field effect transistor is implemented in a silicon on insulator technology.

13. The communication device of claim 10 , wherein the voltage level substantially more negative than the lowest voltage level is more than one volt more negative than the lowest voltage level.

14. The communication device of claim 10 , wherein the body of the at least one field effect transistor is electrically coupled to an accumulated charge sink.

15. The communication device of claim 10 , wherein the body of the at least one field effect transistor during the at least a portion of the off state is to be electrically biased so as to reduce non-linear harmonic and/or intermodulation distortion of RF signals to be propagated by the communication device, reduction via the at least one field effect transistor being relative to the body of the at least one field effect transistor not electrically biased to have the voltage level substantially more negative than the lowest voltage level of the following: ground, the DC voltage level of the source of the at least one field effect transistor, and the DC voltage level of the drain of the at least one field effect transistor.

16. The communication device of claim 15 , wherein a power of a third harmonic of the RF signals to be propagated via the at least one RF switch is to be lower than −30 dBm at an operating power of +35 dBm.

17. The communication device of claim 1 , wherein the at least one field effect transistor is included in a stack of field effect transistors included in the at least one RF switch, the at least one RF switch being included in the at least one integrated circuit chip.

18. The communication device of claim 10 , wherein the body of the at least one field effect transistor is electrically coupled to at least two accumulated charge sinks.

19. An apparatus comprising:
at least one integrated circuit chip including at least one radio frequency (RF) switch, the at least one RF switch further including at least one field effect transistor, the at least one field effect transistor including a gate having a gate oxide, a drain, a source, and a body;
wherein the at least one field effect transistor comprises an N-type metal oxide semiconductor (NMOS) field effect transistor in which a thickness of the gate oxide is less than approximately 8.2 nm;
wherein, during at least a portion of an off state, the body of the at

Assignees

• Psemi Corp

Inventors

• Stuber Michael A
• Brindle Christopher N
• Kelly Dylan J
• Kemerling Clint L
• Imthurn George P
• Welstand Robert B
• Burgener Mark L
• Dribinsky Alexander
• Kim Tae-Youn

Classifications

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• H10D30/6759

  Silicon-on-sapphire [SOS] substrates · CPC title

• H10D30/6744

  Monocrystalline silicon · CPC title

• H10D30/6743

  Silicon · CPC title

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title