Method for forming magnetic film and method for manufacturing magnetic storage element

Patent metadata

Field	Value
Publication number	US-11189784-B2
Application number	US-201916490520-A
Country	US
Kind code	B2
Filing date	Feb 14, 2019
Priority date	Feb 22, 2018
Publication date	Nov 30, 2021
Grant date	Nov 30, 2021

Abstract

A method includes forming an amorphous magnetic film on a film formation subject by sputtering a target that includes any one selected from a group consisting of Mn3Sn, Mn3Ge, and (Mn1-xFex)Ge as a main component and crystalizing the amorphous magnetic film by heating the amorphous magnetic film. The crystalizing includes heating the amorphous magnetic film to a temperature that is greater than or equal to 225° C. and less than or equal to 400° C.

First claim

The invention claimed is:

1. A method for forming an antiferromagnetic film, the method comprising:
forming an amorphous antiferromagnetic film on a film formation subject by sputtering a target, wherein the target includes Mn 3 Sn as a main component;
forming an upper electrode layer on the amorphous antiferromagnetic film; and
crystalizing the amorphous antiferromagnetic film by heating the amorphous antiferromagnetic film and the upper electrode layer,
wherein the crystalizing includes heating the amorphous antiferromagnetic film to a temperature that is greater than or equal to 225° C. and less than or equal to 400° C.

2. The method according to claim 1 , wherein the forming of the amorphous antiferromagnetic film includes setting a pressure of a film formation space in which the amorphous antiferromagnetic film is formed to be greater than or equal to 0.9 Pa and less than or equal to 1.7 Pa.

3. The method according to claim 1 , wherein the forming of the amorphous antiferromagnetic film includes setting a temperature of the film formation subject to be less than or equal to 150° C.

4. The method according to claim 1 , wherein the film formation subject includes a base layer including a film-formed surface and formed of any one selected from a group consisting of Ti, Ru, Al, Pt, Ag, and Au.

5. A method for manufacturing a magnetic storage element, the method comprising:
forming a base layer on a film formation subject;
forming an amorphous antiferromagnetic layer that is in contact with the base layer by sputtering a target, wherein the target includes Mn 3 Sn as a main component;
forming an upper electrode layer on the amorphous antiferromagnetic layer; and
crystalizing the amorphous antiferromagnetic layer by heating the amorphous antiferromagnetic layer together with the base layer and the upper electrode layer,
wherein the crystalizing includes heating the amorphous antiferromagnetic layer to a temperature that is greater than or equal to 225° C. and less than or equal to 400° C.

6. The method according to claim 5 , wherein the forming a base layer includes forming the base layer having a thickness that is greater than or equal to 5 nm.

Assignees

• Ulvac Inc

Inventors

• Oh Seungjun
• Morita Tadashi
• Nozue Tatsuhiro

Classifications

• H10N50/85

  Materials of the active region · CPC title

• C23C14/3407

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• C23C14/34

  Sputtering · CPC title

• C23C14/185

  by cathodic sputtering · CPC title

• C23C14/5806

  Thermal treatment · CPC title