Nanocrystalline graphene and method of forming nanocrystalline graphene

Patent metadata

Field	Value
Publication number	US-11180373-B2
Application number	US-201816183146-A
Country	US
Kind code	B2
Filing date	Nov 7, 2018
Priority date	Nov 29, 2017
Publication date	Nov 23, 2021
Grant date	Nov 23, 2021

Abstract

Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.

First claim

What is claimed is:

1. A graphene product comprising:
a nanocrystalline graphene,
the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp 2 bonding structure to total carbon within a range of about 50% to about 99%, wherein
the nanocrystalline graphene includes hydrogen in an amount of about 1 at % to about 20 at %, and
the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc.

2. The graphene product of claim 1 , wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm.

3. The graphene product of claim 1 , wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700° C. or less through a plasma enhanced chemical vapor deposition process.

4. A graphene product comprising:
a nanocrystalline graphene,
the nanocrystalline graphene including nano-sized crystals and including hydrogen in an amount of about 1 at % to about 20 at %, wherein
the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc.

5. The graphene product of claim 4 , wherein a size of the nano-sized crystals ranges from about 0.5 nm to about 100 nm.

6. The graphene product of claim 4 , wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700° C. or less through a plasma enhanced chemical vapor deposition process.

7. A graphene product comprising:
a nanocrystalline graphene,
the nanocrystalline graphene including nano-sized crystals having a size of about 0.5 nm to about 100 nm,
the nanocrystalline graphene having a D-parameter of an Auger spectrum of carbon in a range of about 18 eV to 22.9 eV.

8. The graphene product of claim 7 , wherein
the nanocrystalline graphene has a ratio of carbon having an sp 2 bonding structure to total carbon within a range of about 50% to about 99%.

9. The graphene product of claim 7 , wherein
the nanocrystalline graphene includes hydrogen in an amount of about 1 at % to about 20 at %.

10. The graphene product of claim 7 , wherein the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc.

11. The graphene product of claim 7 , further comprising:
a substrate, wherein
the nanocrystalline graphene is directly on a surface of the substrate.

12. The graphene product of claim 11 , wherein the substrate includes at least one of a group IV semiconductor material, a semiconductor compound having at least two elements, a metal, or an insulative material.

13. The graphene product of claim 11 , wherein the substrate includes at least one of aluminum (Al), gold, (Au) antimony (Sb), arsenic (As), boron (B), cadmium (Cd), carbon (C), chromium (Cr), cobalt (Co), copper (Cu), gadolinium (Gd), gallium (Ga), germanium (Ge), hafnium (Hf), indium (In), manganese (Mn), molybdenum (Mo), nickel (Ni), nitrogen (N), phosphorus (P), ruthenium (Ru), selenium (Se), silicon (Si), sulfur (S), tellurium (Te), tungsten (W), titanium (Ti), tantalum (Ta), gold (Au), yttrium (Y), zinc (Zn), or zirconium (Zr).

14. The graphene product of claim 7 , wherein the nanocrystalline graphene is directly grown on a substrate at a temperature of about 700° C. or less through a plasma enhanced chemical vapor deposition process.

15. The graphene product of claim 1 , wherein
the ratio of carbon having the sp 2 bonding structure to total carbon in the nanocrystalline graphene is within a range of 50% to 99%.

16. The graphene product of claim 8 , wherein
the ratio of carbon having the sp 2 bonding structure to total carbon in the nanocrystalline graphene is within a range of 50% to 99%.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Song Hyunjae
• Shin Keunwook
• Shin Hyeonjin
• Lee Changseok
• Kim Changhyun
• Byun Kyungeun
• Lee Seungwon
• Lee Eunkyu

Classifications

• H10D64/0113

  the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/4462

  Carbon or carbon-containing materials, e.g. graphene · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title