Dual-level pulse tuning

Patent metadata

Field	Value
Publication number	US-11177115-B2
Application number	US-201916429883-A
Country	US
Kind code	B2
Filing date	Jun 3, 2019
Priority date	Jun 3, 2019
Publication date	Nov 16, 2021
Grant date	Nov 16, 2021

Abstract

Embodiments for the present application include methods and apparatus for operating a plasma enhanced substrate processing system using dual level pulsed radio frequency (RF) power. More specifically, embodiments of the present disclosure allow for frequency and power tuning in a process chamber using dual level pulsed power by using a tuning controller coupled to a matching network and/or a RF power generator. In one embodiment, a tuning system includes a tuning controller disposed in a tuning system, the tuning controller configured to tune dual level RF pulsing data from a RF power generator, wherein the tuning system is connectable to a plasma processing chamber, and a memory connecting to the tuning controller, wherein the tuning controller is configured to couple to a RF power generator and a matching network disposed in the plasma processing chamber.

First claim

What is claimed is:

1. A tuning system comprising:
a tuning controller configured to simultaneously track tuning conditions of two pulse states of a dual level RF pulsing data from an RF power generator, each tuning condition comprising a frequency and a power state, by simultaneously adjusting the RF power generator and a matching network, the tuning system having an input configured to receive signals from the RF power generator and an output configured to provide signals to the matching network operable to control power provided to a plasma processing chamber, the tuning controller further configured to tune the matching-network for each of the two pulse states; and
a memory communicatively coupled to the tuning controller, wherein the tuning controller is configured to utilized information received from the memory to control operation of the matching network and the RF power generator.

2. The tuning system of claim 1 , wherein the tuning controller is coupled between the RF power generator and the matching network.

3. The tuning system of claim 1 , wherein the tuning system is disposed external to the plasma processing chamber.

4. The tuning system of claim 1 , wherein the dual level RF pulsing data comprises at least a pulsed power level or a pulsed frequency level from the RF power generator.

5. The tuning system of claim 1 , wherein the tuning system is configured to further connect to a system controller of the plasma processing chamber.

6. The tuning system of claim 5 , wherein the system controller is configured to provide a predetermined pulsed power level or frequency to the RF power generator.

7. The tuning system of claim 6 , wherein at least one of a last known tuned frequency or a last known tuned power level is saved in the system controller.

8. The tuning system of claim 1 , wherein at least one of a last known tuned frequency or a last known tuned power level is saved in the memory in the tuning system.

9. The tuning system of claim 8 , wherein frequency magnitude of the last known tuned frequency is saved in the memory in the tuning system.

10. The tuning system of claim 1 , wherein the tuning controller is configured to adjust an algorithm or software program saved in the memory of the tuning system.

11. The tuning system of claim 1 , wherein the tuning controller is configured to adjust impedance from the RF power generator.

12. The tuning system of claim 1 , the tuning controller further configured to simultaneously track tuning conditions of a third pulse state of a three-level RF pulsing data from the RF power generator, each tuning condition comprising a frequency and a power state, by simultaneously adjusting the RF power generator and the matching network, the tuning system having an input configured to receive signals from the RF power generator and an output configured to provide signals to a the matching network operable to control power provided to a plasma processing chamber, the tuning controller further configured to tune the matching network for each of the three pulse states.

13. The tuning system of claim 1 , further comprising a system controller, a processing chamber having a lid assembly, an antenna electrically coupled to a processing volume of the processing chamber, and a substrate support, wherein the substrate support and the system controller are is coupled to the tuning system.

14. The tuning system of claim 13 , further comprising a second match circuit and an antenna power supply generator coupled to the antenna and the system controller.

15. The tuning system of claim 14 , further comprising a nozzle positioned in the processing volume, coupled to at least one gas source via a gas line, the gas line positioned between at least two elements of the antenna.

16. The tuning system of claim 15 , wherein the at least one gas source is configured to provide one of a hydrocarbon containing gas, a noble gas, a chlorine containing gas, a fluorine containing gas, an oxygen containing gas, a hydrogen containing gas, and nitrogen.

17. The tuning system of claim 16 , wherein the hydrocarbon containing gas comprises one of methane, sulfur hexafluoride, carbon tetrafluoride, and hydrogen bromide.

18. The tuning system of claim 13 , wherein the tuning controller is further coupled to the lid assembly.

19. The tuning system of claim 18 , the lid assembly comprising a lid of a processing chamber and a nozzle.

20. The tuning system of claim 13 , further comprising a cable line coupling the matching network, RF generator and system controller.

Assignees

• Applied Materials Inc

Inventors

• Leray Gary
• Todorow Valentin N
• Rogers James

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32183 Primary

  Matching circuits · CPC title

• H01J37/32724

  Temperature · CPC title