Etching Solution for Selectively Removing Silicon Over Silicon-Germanium Alloy From a Silicon-Germanium/ Silicon Stack During Manufacture of a Semiconductor Device
US-2019085240-A1 · Mar 21, 2019 · US
Silicon layer etchant composition and method of forming pattern by using the same
US11168253B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11168253-B2 |
| Application number | US-202016734789-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 6, 2020 |
| Priority date | Jan 8, 2019 |
| Publication date | Nov 9, 2021 |
| Grant date | Nov 9, 2021 |
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Abstract
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A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.
First claim
Opening claim text (preview).
What is claimed is: 1. A silicon layer etchant composition, comprising: about 1 wt % to about 20 wt % of an alkylammonium hydroxide including tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, or tetrapropylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound including 1-amino-2-propanol, 2-amino-1-butanol, N-methylethanolamine, diethylenetriamine, or triethanolamine; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group including polyoxyethylene phenyl ether, polyoxyethylene beta-naphthyl ether, polyoxyethylene 2-ethylhexyl ether, polyoxyethylene decyl ether, polyoxyethylene lauryl ether, or polyoxyethylene oleyl ether; and water, all wt % being based on a total weight of the silicon layer etchant composition, wherein the composition has a pH of 11 to 14. 2. A method of forming a pattern, the method comprising: forming a dummy gate by etching a silicon layer on a substrate; forming an insulating layer to partially surround the dummy gate; removing the dummy gate by using the silicon layer etchant composition as claimed in claim 1 ; and forming a gate structure in an opening obtained by the removing of the dummy gate. 3. The method as claimed in claim 2 , wherein forming the gate structure includes forming a barrier pattern and a metal gate, which are sequentially stacked in the opening in this stated order, such that the barrier pattern includes a metal nitride. 4. A method of preparing the silicon layer etchant composition as claimed in claim 1 , the method comprising: preparing an additive mixture by mixing the amine compound with the nonionic surfactant including both a hydrophobic group and a hydrophilic group; and mixing the additive mixture with an aqueous solution of the alkylammonium hydroxide.
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Classifications
by chemical etching · CPC title
Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title
Chemical etching · CPC title
by chemical means · CPC title
of inorganic materials · CPC title
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- What does patent US11168253B2 cover?
- A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant …
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd, Dongwoo Fine Chem Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C09K13/00. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 09 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).