Bulk acoustic wave (BAW) resonator

Patent metadata

Field	Value
Publication number	US-11152913-B2
Application number	US-201916290175-A
Country	US
Kind code	B2
Filing date	Mar 1, 2019
Priority date	Mar 28, 2018
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

An acoustic resonator includes a first piezoelectric layer, a second piezoelectric layer, a coupler layer, a first electrode, and a second electrode. The first piezoelectric layer has a first polarity. The second piezoelectric layer has a second polarity opposite the first polarity. The coupler layer is between the first piezoelectric layer and the second piezoelectric layer. The first electrode is on the first piezoelectric layer opposite the coupler layer. The second electrode is on the second piezoelectric layer opposite the coupler layer.

First claim

What is claimed is:

1. A second overmode bulk acoustic wave (BAW) resonator comprising:
a first piezoelectric layer having a first polarity;
a second piezoelectric layer having a second polarity, wherein the first polarity and the second polarity have opposing signs of a piezoelectric constant;
a coupler layer between the first piezoelectric layer and the second piezoelectric layer;
a first electrode on the first piezoelectric layer opposite the coupler layer;
a second electrode on the second piezoelectric layer opposite the coupler layer;
wherein the second overmode BAW resonator is configured to excite a second order mode through the first piezoelectric layer, the coupler layer, and the second piezoelectric layer.

2. The second overmode BAW resonator of claim 1 wherein:
the coupler layer has a first acoustic impedance; and
the first piezoelectric layer and the second piezoelectric layer have a second acoustic impedance such that the first acoustic impedance divided by the second acoustic impedance is greater than 1.0.

3. The second overmode BAW resonator of claim 2 wherein the first acoustic impedance divided by the second acoustic impedance is greater than 1.5.

4. The second overmode BAW resonator of claim 2 wherein the first acoustic impedance divided by the second acoustic impedance is greater than 2.0.

5. The second overmode BAW resonator of claim 2 wherein the first acoustic impedance divided by the second acoustic impedance is greater than 3.0.

6. The second overmode BAW resonator of claim 2 wherein the coupler layer is a metal layer.

7. The second overmode BAW resonator of claim 6 wherein the first piezoelectric layer and the second piezoelectric layer are aluminum nitride.

8. The second overmode BAW resonator of claim 7 wherein the first electrode and the second electrode are tungsten.

9. The second overmode BAW resonator of claim 6 wherein the coupler layer is one of molybdenum, tungsten, and osmium.

10. The second overmode BAW resonator of claim 9 wherein the first piezoelectric layer and the second piezoelectric layer are aluminum nitride.

11. The second overmode BAW resonator of claim 10 wherein the first electrode and the second electrode are tungsten.

12. The second overmode BAW resonator of claim 2 wherein:
a thickness of the first piezoelectric layer and the second piezoelectric layer is between 350 nm and 1050 nm; and
a thickness of the coupler layer is between 30 nm and 120 nm.

13. The second overmode BAW resonator of claim 2 wherein:
the coupler layer has a first thickness; and
the first electrode and the second electrode have a second thickness such that the first thickness divided by the second thickness is between 0.1 and 0.4.

14. The second overmode BAW resonator of claim 13 wherein:
a thickness of the first piezoelectric layer and the second piezoelectric layer is between 350 nm and 1050 nm;
the first thickness of the coupler layer is between 30 nm and 120 nm; and
the second thickness of the first electrode and the second electrode is between 100 nm and 300 nm.

15. The second overmode BAW resonator of claim 14 wherein:
the first piezoelectric layer and the second piezoelectric layer are aluminum nitride;
the coupler layer is one of molybdenum, tungsten, and osmium; and
the first electrode and the second electrode are tungsten.

16. The second overmode BAW resonator of claim 13 wherein the first thickness divided by the second thickness is between 0.2 and 0.3.

17. The second overmode BAW resonator of claim 16 wherein:
a thickness of the first piezoelectric layer and the second piezoelectric layer is between 350 nm and 1050 nm;
the first thickness of the coupler layer is between 30 nm and 120 nm; and
the second thickness of the first electrode and the second electrode is between 100 nm and 300 nm.

18. The second overmode BAW resonator of claim 17 wherein:
the first piezoelectric layer and the second piezoelectric layer are aluminum nitride;
the coupler layer is one of molybdenum, tungsten, and osmium; and
the first electrode and the second electrode are tungsten.

19. The second overmode BAW resonator of claim 1 wherein the coupler layer provides an acoustic impedance between the first piezoelectric layer and the second piezoelectric layer in order to provide an increased integral of a stress profile of the second overmode BAW resonator.

20. The second overmode BAW resonator of claim 19 wherein the acoustic impedance provided by the coupler layer provides an enhanced effective electromechanical coupling of the second overmode BAW resonator.

Assignees

• Qorvo Us Inc

Inventors

• Sadhu Jyothi Swaroop
• Fattinger Gernot
• Aigner Robert
• Schaefer Michael

Classifications

• H03H9/131

  consisting of a multilayered structure · CPC title

• H03H9/02015 Primary

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H9/171 Primary

  implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type · CPC title

• H03H9/174

  Membranes · CPC title

• H03H9/02078 Primary

  the vibration mode being overmoded · CPC title