Crystal resonator, and production method therefor
US-9853627-B2 · Dec 26, 2017 · US
Method for manufacturing piezoelectric resonator device
US8991022B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8991022-B2 |
| Application number | US-201013142877-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 7, 2010 |
| Priority date | Jan 7, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method for manufacturing piezoelectric resonator devices according to the present invention includes the following steps: a wafer forming step of preparing a thick-walled wafer 30 integrally formed with multiple lower lid members 3 ; a bonding step of bonding crystal resonator plates 2 to one main surface 31 of the wafer 30 via a bonding material 5 and bonding upper lid members 4 on the crystal resonator plates via a bonding material 5 ; a thinning step of thinning the wafer 30 from the other main surface 37 of the wafer; an external terminal forming step of forming external terminals on the other main surface of the thinned wafer; and a dividing step of cutting the wafer between each adjacent pair of crystal resonators so that multiple crystal resonators are obtained.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a piezoelectric resonator device including a piezoelectric resonator plate having an excitation electrode formed thereon, and upper and lower lid members that hermetically seal the excitation electrode, the upper lid member and the lower lid member being bonded to each other via a bonding material, the manufacturing method comprising: a wafer forming step of preparing a thick-walled wafer that is integrally formed with a pl…
Assignees
Inventors
Classifications
- H03H9/1035Primary
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
Cross-Sectional Technologies · mapped topic
Cross-Sectional Technologies · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8991022B2 cover?
- A method for manufacturing piezoelectric resonator devices according to the present invention includes the following steps: a wafer forming step of preparing a thick-walled wafer 30 integrally formed with multiple lower lid members 3 ; a bonding step of bonding crystal resonator plates 2 to one main surface 31 of the wafer 30 via a bonding material 5 and bonding upper lid members 4 …
- Who is the assignee on this patent?
- Satoh Syunsuke, Kohda Naoki, Daishinku Corp
- What technology area does this patent fall under?
- Primary CPC classification H03H9/1035. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).