Pattern forming method, method for manufacturing electronic device, monomer for producing resin for semiconductor device manufacturing process, resin, method for producing resin, actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film

Patent metadata

Field	Value
Publication number	US-11150557-B2
Application number	US-201816014161-A
Country	US
Kind code	B2
Filing date	Jun 21, 2018
Priority date	Dec 22, 2015
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

First claim

What is claimed is:

1. A pattern forming method comprising a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, and
wherein the resin (A) includes a repeating unit having an acid-decomposable group.

2. The pattern forming method according to claim 1 , wherein the resin composition contains the resin (A) and a compound generating an acid upon irradiation with actinic rays or radiation,
the monomer having a silicon atom and a turbidity of 1 ppm or less has a silsesquioxane structure, and
the resin (A) has a repeating unit represented by General Formula (AI) as the repeating unit having an acid-decomposable group:

wherein in General Formula (AI), X al represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom; T represents a single bond or a divalent linking group; R x1 to R x3 each independently represents an alkyl group or a cycloalkyl group; and two of R x1 to R x3 may be bonded to each other to form a ring structure.

3. The pattern forming method according to claim 1 , wherein the resin composition contains the resin (A) and a compound generating an acid upon irradiation with actinic rays or radiation, and
the monomer having a silicon atom is purified by filtration with a filter of which the pore diameter is 1.0 μm or less, centrifugation, adsorption, liquid separation, distillation, sublimation, crystallization, or a combination of two or more thereof.

4. A pattern forming method comprising:
a film forming step of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A);
an exposing step of irradiating the film with actinic rays or radiation; and
a developing step of developing the film irradiated with actinic rays or radiation,
wherein the resin (A) is a resin obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, and
the resin (A) includes a repeating unit having an acid-decomposable group.

5. The pattern forming method according to claim 4 ,
wherein the monomer having a silicon atom and a turbidity of 1 ppm or less has a silsesquioxane structure.

6. The pattern forming method according to claim 5 ,
wherein the silsesquioxane structure is a cage type silsesquioxane structure.

7. The pattern forming method according to claim 4 ,
wherein the resin (A) includes a repeating unit having at least one of a lactone structure, a sultone structure, or a carbonate structure.

8. The pattern forming method according to claim 4 ,
wherein the developing step is a step of carrying out development using a developer including an organic solvent.

9. A method for manufacturing an electronic device, comprising the pattern forming method according to claim 4 .

10. A resin which is a polymer of a monomer for producing a resin for a semiconductor manufacturing process, said monomer having a silicon atom,
wherein the monomer has a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, and
the resin includes a repeating unit having an acid-decomposable group.

11. A method for producing the resin including a repeating unit having an acid-decomposable group according to claim 10 , comprising polymerizing a monomer for producing a resin for a semiconductor manufacturing process, said monomer having a silicon atom,
wherein the monomer has a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system.

12. An actinic ray-sensitive or radiation-sensitive resin composition comprising the resin according to claim 10 .

13. An actinic ray-sensitive or radiation-sensitive film formed using the actinic ray-sensitive or radiation-sensitive resin composition according to claim 12 .

Assignees

• Fujifilm Corp

Inventors

• HATAKEYAMA Naoya
• Goto Akiyoshi
• Yonekuta Yasunori

Classifications

• C08F30/04 Primary

  containing a metal · CPC title

• G03F7/0758

  with silicon- containing groups in the side chains · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/075 Primary

  Silicon-containing compounds · CPC title