Method for producing silicon carbide single crystal and silicon carbide single crystal substrate
US-2017342593-A1 · Nov 30, 2017 · US
Method for manufacturing a silicon carbide single crystal by adjusting the position of a hole in a top of the growth container relative to the off angle of the silicon carbide substrate
US11149357B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11149357-B2 |
| Application number | US-201816958762-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 14, 2018 |
| Priority date | Dec 27, 2017 |
| Publication date | Oct 19, 2021 |
| Grant date | Oct 19, 2021 |
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Abstract
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A method for manufacturing a SiC single crystal having a growth container surrounded by a heat-insulating material, a seed crystal substrate disposed inside a top at a center of the container, a silicon carbide raw material disposed at a bottom of the container to sublimate and grow a SiC crystal to allow a center of the hole to deviate from a center position of the seed substrate to a position on a periphery side, a SiC substrate having a main surface tilted from a {0001} plane wherein a basal plane is used and grown with the seed substrate so that a direction of a component of a normal vector of the basal plane of the seed substrate parallel to the main surface and an eccentric direction of the hole are opposite directions in a cross-sectional view including the center of the seed substrate and the center of the hole.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a silicon carbide single crystal in which a growth container is surrounded by a heat-insulating material with a hole for temperature measurement provided in a top thereof, a seed crystal substrate is disposed in a center at a top on an inside of the growth container, a silicon carbide raw material is disposed at a bottom of the growth container, and the silicon carbide raw material is sublimated to grow a silicon carbide single crystal on the seed crystal substrate, wherein to allow a position of a center of the hole for temperature measurement in the heat-insulating material to deviate from a position of a center of the seed crystal substrate disposed inside the growth container, the hole for temperature measurement is provided to deviate to a position on a periphery side relative to a center of the seed crystal substrate disposed inside the growth container, a silicon carbide single crystal substrate having a main surface tilted by an off angle from a {0001} plane which is a basal plane is used as the seed crystal substrate, and the silicon carbide single crystal is grown with the seed crystal substrate disposed inside the growth container so that a direction of a component of a normal vector of the basal plane of the seed crystal substrate parallel to the main surface of the seed crystal substrate and an eccentric direction of the center of the hole for temperature measurement relative to the center of the seed crystal substrate are opposite directions in a cross-sectional view including the center of the seed crystal substrate inside the growth container and the center of the hole for temperature measurement in the heat-insulating material. 2. The method for manufacturing a silicon carbide single crystal according to claim 1 , wherein the off angle of the seed crystal substrate is 0.5 to 10 degrees. 3. The method for manufacturing a silicon carbide single crystal according to claim 1 , wherein the hole for temperature measurement in the heat-insulating material is provided so that the center of the hole is positioned towards the periphery side than a one-third-radius position of the seed crystal substrate from the center of the seed crystal substrate disposed inside the growth container. 4. The method for manufacturing a silicon carbide single crystal according to claim 2 , wherein the hole for temperature measurement in the heat-insulating material is provided so that the center of the hole is positioned towards the periphery side than a one-third-radius position of the seed crystal substrate from the center of the seed crystal substrate disposed inside the growth container.
Assignees
Inventors
Classifications
- C30B23/06Primary
Heating of the deposition chamber, the substrate or the materials to be evaporated · CPC title
Heating of the substrate · CPC title
- C30B23/002Primary
Controlling or regulating · CPC title
Carbides · CPC title
characterised by the substrate · CPC title
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- What does patent US11149357B2 cover?
- A method for manufacturing a SiC single crystal having a growth container surrounded by a heat-insulating material, a seed crystal substrate disposed inside a top at a center of the container, a silicon carbide raw material disposed at a bottom of the container to sublimate and grow a SiC crystal to allow a center of the hole to deviate from a center position of the seed substrate to a position…
- Who is the assignee on this patent?
- Shinetsu Handotai Kk
- What technology area does this patent fall under?
- Primary CPC classification C30B23/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 19 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).