Embedded bridge substrate having an integral device

Patent metadata

Field	Value
Publication number	US-11133256-B2
Application number	US-201916446920-A
Country	US
Kind code	B2
Filing date	Jun 20, 2019
Priority date	Jun 20, 2019
Publication date	Sep 28, 2021
Grant date	Sep 28, 2021

Abstract

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate; a bridge, embedded in the package substrate, wherein the bridge includes an integral passive component, and wherein a surface of the bridge include first contacts in a first interconnect area and second contacts in a second interconnect area; a first die coupled to the passive component via the first contacts in the first interconnect area; and a second die coupled to the second contacts in the second interconnect area.

First claim

The invention claimed is:

1. A microelectronic assembly, comprising:
a bridge embedded in a substrate,
the bridge having a bridge substrate layer at a first surface side and one or more routing layers at an opposing second surface side,
a first integral passive component in the bridge substrate layer,
a second integral passive component in the one or more routing layers,
a first die coupled to the first and second integral passive components via first and second contacts on the bridge,
a second die coupled to the first die via a first conductive pathway of the one more routing layers,
a third die coupled to the second die via a second conductive pathway directly embedded in a material of the substrate away from the bridge.

2. The microelectronic assembly of claim 1 , wherein the first or second integral passive component is a thin film resistor (TFR).

3. The microelectronic assembly of claim 2 , wherein the TFR is part of a calibration circuit.

4. The microelectronic assembly of claim 1 , wherein the first or second integral passive component is an array of capacitors.

5. The microelectronic assembly of claim 4 , wherein an individual capacitor in the array of capacitors is one of a trench capacitor, a metal-oxide-semiconductor (MOS) capacitor, a metal-insulator-metal (MIM) capacitor, or a parallel plate capacitor.

6. The microelectronic assembly of claim 4 , wherein the array of capacitors is part of an input/output circuit.

7. The microelectronic assembly of claim 1 , wherein the first integral passive component is a thin film transistor (TFR) and the second integral passive component is a capacitor.

8. The microelectronic assembly of claim 1 , wherein the second integral passive component is at the second surface of the bridge.

9. The microelectronic assembly of claim 1 , further comprising:
a third integral passive component in the one or more routing layers, and wherein the second die is coupled to the third integral passive component via a third contact on the bridge.

10. A computing device, comprising:
a circuit board; and
an integrated circuit (IC) package disposed on the circuit board, wherein the IC package includes:
a bridge embedded in a package substrate;
the bridge having a bridge substrate layer at a first surface side and one or more routing layers at an opposing second surface side,
a first thin film transistor (TFR) in the bridge substrate layer,
a second thin film transistor (TFR) in the one or more routing layers,

a first die coupled to the first and second TFRs via first and second contacts on the bridge,
a second die coupled to the first die via a first conductive pathway of the one more routing layers,
a third die coupled to the second die via a second conductive pathway directly embedded in a material of the substrate away from the bridge.

11. The computing device of claim 10 , wherein the first TFR is part of a calibration circuit.

12. The computing device of claim 10 , wherein the bridge further comprises:
a capacitor in the one or more routing layers.

13. The computing device of claim 10 , wherein the second TFR is one of a plurality of TFRs in the one or more routing layers.

14. An integrated circuit (IC) package, comprising:
a bridge embedded in a package substrate;
the bridge having a bridge substrate layer at a first surface side and one or more routing layers at an opposing second surface side,
a first capacitor in the bridge substrate layer,
a second capacitor in the one or more routing layers,
a first die coupled to the first and second capacitors via first and second contacts on the bridge,
a second die coupled to the first die via a first conductive pathway of the one more routing layers,
a third die coupled to the second die via a second conductive pathway directly embedded in a material of the substrate away from the bridge.

15. The IC package of claim 8 , further comprising:
a circuit board, wherein the third die is coupled to the circuit board via a third conductive pathway directly embedded in a material of the package substrate away from the bridge.

16. The IC package of claim 14 , wherein the first capacitor and the second capacitor are parallel plate capacitors.

17. The IC package of claim 14 , wherein the first capacitor and the second capacitor are part of an array of capacitors.

Assignees

• Intel Corp

Inventors

• Jain Amit Kumar
• Shekhar Sameer
• Kuan Chin Lee
• Doran Kevin Joseph
• Han Dong-Ho

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/611

  for connecting multiple chips together · CPC title

• H10W70/618

  the bridge chips being embedded in the package substrates, interposers or redistribution layers · CPC title