Etching compositions

Patent metadata

Field	Value
Publication number	US-11124704-B2
Application number	US-202117159551-A
Country	US
Kind code	B2
Filing date	Jan 27, 2021
Priority date	Dec 3, 2018
Publication date	Sep 21, 2021
Grant date	Sep 21, 2021

Abstract

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

First claim

What is claimed is:

1. An etching composition, comprises:
at least one fluorine-containing acid, the at least one fluorine-containing acid comprising hydrofluoric acid and being in an amount of at most about 0.5 wt % of the composition;
at least one oxidizing agent in an amount of from about 5 wt % to about 10 wt % of the composition;
at least one organic acid or an anhydride thereof, the at least one organic acid comprising formic acid, acetic acid, propionic acid, or butyric acid and being in an amount of from about 50 wt % to about 80 wt % of the composition;
at least one polymerized naphthalene sulfonic acid in an amount of from about 0.005 wt % to about 0.1 wt % of the composition;
at least one amine, the at least one amine comprising an amine of formula (I): N-R 1 R 2 R 3 , wherein R 1 is C 1 -C 8 alkyl optionally substituted by OH or NH 2 , R 2 is H or C 1 -C 8 alkyl optionally substituted by OH, and R 3 is C 1 -C 8 alkyl optionally substituted by OH and the at least one amine being in an amount of from about 0.001 wt % to about 0.1 wt % of the composition; and
water.

2. The composition of claim 1 , wherein the at least one oxidizing agent comprises hydrogen peroxide.

3. The composition of claim 1 , wherein the at least one oxidizing agent is from about 6 wt % to about 10 wt % of the composition.

4. The composition of claim 1 , wherein the at least one organic acid or an anhydride thereof comprises acetic acid and acetic anhydride.

5. The composition of claim 4 , wherein the total amount of the acetic acid and acetic anhydride is from about 60 wt % to about 80 wt % of the composition.

6. The composition of claim 1 , wherein the at least one polymerized naphthalene sulfonic acid comprises a sulfonic acid having a structure of

in which n is 3 to 6.

7. The composition of claim 1 , wherein the at least one polymerized naphthalene sulfonic acid is from about 0.005 wt % to about 0.05 wt % of the composition.

8. The composition of claim 1 , wherein the amine of formula (I) is diisopropylamine, N-butyl diethanolamine, N-(3-aminopropyl)-diethanolamine, N-octylglucamine, N-ethylglucamine, N-methylglucamine, or 1-[bis(2-hydroxyethyl)amino]-2-propanol.

9. The composition of claim 1 , wherein the at least one amine is from about 0.005 wt % to about 0.05 wt % of the composition.

10. The composition of claim 1 , further comprising an inorganic acid.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Bjelopavlic Mick
• Ballesteros Carl

Classifications

• H10P50/642 Primary

  Chemical etching · CPC title

• H10P50/667

  by liquid etching only · CPC title

• C09K13/10 Primary

  containing a boron compound · CPC title

• C09K13/08 Primary

  containing a fluorine compound · CPC title

• H01L21/30604

  Electricity · mapped topic