Etching method, etching solution used in same, etching solution kit, and method for manufacturing semiconductor substrate product

Patent metadata

Field	Value
Publication number	US-2016118264-A1
Application number	US-201414927700-A
Country	US
Kind code	A1
Filing date	May 1, 2014
Priority date	May 2, 2013
Publication date	Apr 28, 2016
Grant date	—

Abstract

There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains an alkali compound into contact with the second layer and selectively removing the second layer.

First claim

What is claimed is:

1 . An etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method comprising:
bringing an etching solution which contains an alkali compound into contact with the second layer and selectively removing the second layer.

2 . The etching method according to claim 1 , wherein the concentration of germanium (Ge) of the first layer is 40% by mass or greater.

3 . The etching method according to claim 1 , wherein the alkali compound is an inorganic base represented by the following Formula (I-1), an organic base represented by any of the following Formulae (O-1) to (O-5), hydrazines represented by the following Formula (H-1), a compound having a repeating unit selected from the following Formulae (a-1) to (a-8), or a compound represented by the following Formula (b),
M(OH) n1   (I-1)

M represents an alkali metal, an alkaline-earth metal, NH 4 , NR N 2 (R N represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms), a transition element, or a rare-earth element, n1 represents an integer,

in the formulae, R O1 to R O6 each independently represent an acyl group, an alkoxy group, an alkoxycarbonyl group, an alkoxycarbonylamino group, a group represented by the following Formula (x), an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heterocyclic group,
X1-(Rx1-X2) mx -Rx2-*  (x)

X1 represents an amino group having 0 to 4 carbon atoms, a hydroxy group, or an alkoxy group having 1 to 4 carbon atoms, Rx1 and Rx2 each independently represent an alkylene group having 1 to 6 carbon atoms, an alkenylene group having 2 to 6 carbon atoms, an alkynylene group having 2 to 6 carbon atoms, an arylene group having 6 to 10 carbon atoms, or a combination of these, X2 represents O, S, CO, or NR N (R N represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms), mx represents an integer of 0 to 6, the symbol “*” indicates an atomic bond,

in the formulae, R O7 to R O10 each independently represent an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 14 carbon atoms, an aralkyl group having 7 to 15 carbon atoms, or a group represented by the following Formula (y),
Y1-(Ry1-Y2) my -Ry2-*  (y)

Y1 represents an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, an alkynyl group having 2 to 12 carbon atoms, an aralkyl group having 7 to 15 carbon atoms, an aryl group having 6 to 14 carbon atoms, a hydroxy group, or an alkoxy group having 1 to 4 carbon atoms, Y2 represents O, S, CO, or NR N (R N represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms), Ry1 and Ry2 each independently represent an alkylene group having 1 to 6 carbon atoms, an alkenylene group having 2 to 6 carbon atoms, an alkynylene group having 2 to 6 carbon atoms, an arylene group having 6 to 10 carbon atoms, or a combination of these, the symbol “*” indicates an atomic bond,
R O11 represents a group having the same definition as that for R O7 , R O12 represents a substituent, mO represents an integer of 0 to 5,
M4 − and M5 − represent a counterion,
R H1 2 N—NR H2 2   (H-1)

R H1 and R H2 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an alkynyl group having 2 to 6 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an aralkyl group having 7 to 15 carbon atoms,

R a represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, or a heterocyclic group, R b represents an alkyl group or an alkenyl group, L a represents an alkylene group, a carbonyl group, an imino group, an arylene group, a heterocyclic group, or a combination of these, among these, an alkylene group or a carbonyl group is preferable, L b represents a single bond, an alkylene group, a carbonyl group, an imino group, an arylene group, a heterocyclic group, or a combination of these, R c represents a hydrogen atom or an alkyl group, n represents an integer of 0 or greater, Q1 to Q3 each independently represent a nitrogen-containing heterocycle,
R c 2 N-[L d -N(R c )] m L d -NR c 2   (b)

R c represents a hydrogen atom or an alkyl group, m represents an integer of 0 or greater, L d represents an alkylene group, a carbonyl group, an imino group, an arylene group, a heterocyclic group, or a combination of these.

4 . The etching method according to claim 1 , wherein the content of the alkali compound in a solution is in the range of 0.01% by mass to 20% by mass.

5 . The etching method according to claim 1 , further comprising:
applying a heat treatment to at least one of the first layer and the second layer before or after etching with the etching solution.

6 . The etching method according to claim 1 , wherein the second layer is selectively removed with respect to the first layer and the following third layer.
Third layer: layer containing germanium (Ge) and the specific metal element, which is interposed between the first layer and the second layer

7 . The etching method according to claim 1 , further comprising:
allowing the semiconductor substrate to rotate and supplying the etching solution through a nozzle from the upper surface of the semiconductor substrate during rotation when the etching solution is provided for the semiconductor substrate.

8 . The etching method according to claim 7 , wherein the etching solution is provided while the nozzle is relatively moved with respect to the rotation of the semiconductor substrate.

9 . The etching method according to claim 1 , wherein the temperature of the etching solution at the time of being brought into contact with the second layer is in the range of 15° C. to 80° C.

10 . The etching method according to claim 1 , wherein the time required for etching one substrate is in the range of 10 seconds to 180 seconds.

11 . The etching method according to claim 1 , further comprising:
a step of washing the semiconductor substrate with water at least before or after the etching.

12 . The etching method according to claim 1 ,
wherein the etching solution further contains an oxidant, and a first liquid which does not contain the oxidant and a second liquid which contains the oxidant are separated from each other and then stored.

13 . The etching method according to claim 12 , wherein the first liquid and the second liquid are mixed with each other at a suitable time when the semiconductor substrate is etched.

14 . The etching method according to claim 1 , wherein the etching solution further contains the following organic additive.
Organic additive: an additive formed of an organic compound which contains a nitrogen atom, a sulfur atom, a phosphorous atom, or an oxygen atom

15 . An etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solutio

Assignees

• Fujifilm Corp

Inventors

• Kamimura Tetsuya
• Koyama Akiko
• Takahashi Satomi
• Mizutani Atsushi
• Sugishima Yasuo

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10P50/642 Primary

  Chemical etching · CPC title