Sub-ground rule e-Fuse structure

US11121082B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11121082-B2
Application numberUS-201916387481-A
CountryUS
Kind codeB2
Filing dateApr 17, 2019
Priority dateApr 17, 2019
Publication dateSep 14, 2021
Grant dateSep 14, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An e-Fuse device including a first electronic feature and a second electronic feature comprised of a conductive material, each of the first electronic feature and the second electronic feature having a width at least as great as a ground rule of a patterning process; and a fuse element comprised of the conductive material having a width less than the ground rule of the patterning process, the fuse element connecting a bottom portion of the first electronic feature and a bottom portion of the second electronic feature. Also disclosed is a method of making the e-Fuse device.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for making an e-Fuse device comprising: forming a mandrel structure over a dielectric; patterning the mandrel structure to include a first portion, a second portion and a third portion connecting the first portion and the second portion, the third portion having a dimension that is less than a minimum ground rule; forming a sidewall layer over the mandrel structure so that sidewalls are formed in a sidewall pattern on sidewalls of the mandrel structure; removing the mandrel structure and, in a patterning process, using the sidewall pattern to etch the dielectric to form a trench structure comprising a first electronic feature replacing the first portion of the mandrel structure and having a width at least as great as a ground rule of the patterning process for the first electronic feature, a second electronic feature replacing the second portion of the mandrel structure having a width at least as great as a ground rule of the patterning process for the second electronic feature and a fuse element trench having a width less than the minimum ground rule replacing the third portion of the mandrel structure; and filling the trench structure with conductive material to form the first and second electronic features and a fuse element having a width less than the minimum ground rule such that the fuse element directly contacts the first electronic feature and the second electronic feature to form the e-Fuse device. 2. The method of claim 1 further comprising forming a hard mask between the dielectric and the mandrel structure and wherein removing the mandrel structure and using the sidewall pattern to etch the dielectric includes using the sidewall pattern to etch the hard mask which is used to etch the dielectric. 3. The method of claim 1 wherein the patterning process includes using a cut mask to pattern the mandrel structure to form the third portion. 4. The method of claim 1 wherein the third portion is contiguous with the first portion and the second portion. 5. The method of claim 1 wherein the fuse element directly contacts the first electronic feature and the second electronic feature so that the first electronic feature, fuse element and second electronic feature form an electronic circuit. 6. The method of claim 1 wherein providing a mandrel structure further comprises including a fourth portion between the first portion and the third portion and a fifth portion between second portion and the third portion, the fourth portion and the fifth portion each having a dimension that is less than a minimum ground rule; wherein removing the mandrel structure and using the sidewall pattern to etch the dielectric further comprising a first heat blocking link trench having a width less than the minimum ground rule replacing the fourth portion and a second heat blocking link trench having a width less than the minimum ground rule replacing the fifth portion; and wherein filling the trench structure further comprising filling the first heat blocking link trench and the second heat blocking link trench with the conductive material to form a first heat blocking link and a second heat blocking link each having a width less than or equal to the minimum ground rule. 7. The method of claim 6 wherein the width of the first heat blocking link and the width of the second heat blocking link are greater than the width of the fuse element. 8. The method of claim 6 wherein the width of the first heat blocking link and the width of the second heat blocking link are greater than the width of the fuse element by at least ten percent. 9. The method of claim 6 wherein the patterning process includes using a cut mask to pattern the mandrel structure to form the fourth and fifth portions. 10. The method of claim 6 wherein the fourth portion is contiguous with the first portion and the third portion and the fifth portion is contiguous with the second portion and the third portion. 11. The method of claim 6 further comprising programming the fuse element such that the first and second heat blocking links preventing heat loss from the fuse element.

Assignees

Inventors

Classifications

  • H10W20/493Primary

    Fuses, i.e. interconnections changeable from conductive to non-conductive · CPC title

  • Electricity · mapped topic

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Frequently asked questions

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What does patent US11121082B2 cover?
An e-Fuse device including a first electronic feature and a second electronic feature comprised of a conductive material, each of the first electronic feature and the second electronic feature having a width at least as great as a ground rule of a patterning process; and a fuse element comprised of the conductive material having a width less than the ground rule of the patterning process, the f…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H10W20/493. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 14 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).