Heating platform, thermal treatment and manufacturing method

Patent metadata

Field	Value
Publication number	US-11107708-B2
Application number	US-201815866479-A
Country	US
Kind code	B2
Filing date	Jan 10, 2018
Priority date	Nov 14, 2017
Publication date	Aug 31, 2021
Grant date	Aug 31, 2021

Abstract

A heating platform for heating a wafer is provided. The heating platform includes a support carrier, a detection module and a first heating module. The wafer is supported by the support carrier. The detection module is configured to monitor a surface condition of the wafer supported by the support carrier. The first heating module is disposed at a side of the support carrier. The first heating module includes a plurality of heating units electrically connected to the detection module, and the heating units is arranged in an array. A thermal treatment and a manufacturing method are further provided.

First claim

What is claimed is:

1. A heating platform for heating a wafer, the heating platform comprising:
a support carrier, the wafer being supported by the support carrier;
a detection module, configured to monitor a surface condition of the wafer supported by the support carrier, wherein the surface condition comprises topography of a top surface of the wafer; and
a first heating module disposed at a side of the support carrier, the first heating module comprising a plurality of heating units electrically connected to the detection module, and the heating units being arranged in an array, wherein the first heating module further comprises a hole configured for an inlet of a process equipment to pass through, and the plurality of heating units surrounds the hole.

2. The heating platform according to claim 1 , wherein the first heating module is disposed above the support carrier, and the wafer is between the first heating module and the support carrier.

3. The heating platform according to claim 1 , further comprising:
a second heating module disposed on the support carrier, wherein the first heating module is disposed above the second heating module, and the wafer is between the first heating module and the second heating module.

4. The heating platform according to claim 1 , wherein the array of the heating units comprises rows of the heating units, and the heating units arranged in two adjacent rows substantially aligned along a column direction.

5. The heating platform according to claim 1 , wherein the array of the heating units comprises rows of the heating units, and the heating units arranged in two adjacent rows among the rows are staggered.

6. The heating platform according to claim 1 , wherein the array of the heating units comprises groups of the heating units, and the groups of the heating units are arranged along a plurality of concentric circular paths, respectively.

7. The heating platform according to claim 1 , wherein each of the heating units comprises a UV light source, a microwave source, an IR light source, or a NIR light source.

8. The heating platform according to claim 1 , wherein each of the heating units comprises a fluid pipe containing heating fluid.

9. The heating platform according to claim 1 , further comprising:
a cooling module disposed on the support carrier and comprising a plurality of cooling units electrically connected to the detection module, and the cooling units are arranged in an array.

10. The heating platform according to claim 9 , wherein each of the cooling units comprises a fluid pipe containing cooling fluid.

11. The heating platform according to claim 1 , wherein the array of the cooling units comprises rows of the cooling units, and the cooling units arranged in two adjacent rows substantially aligned along a column direction.

12. A thermal treatment, comprising:
providing a wafer onto a heating platform;
detecting a surface condition of the wafer by a detection module of the heating platform, wherein the surface condition comprises topography of a top surface of the wafer; and
performing a wafer heating process by a heating module of the heating platform according to information detected by the detection module, wherein the heating module comprises a plurality of heating units, and the heating units are arranged in array, wherein two adjacent rows of the array of the heating units are substantially aligned along a column direction.

13. The thermal treatment according to claim 12 , wherein a plurality of regions of the top surface of the wafer are respectively heated by the heating units according to the topography of the top surface of the wafer.

14. The thermal treatment according to claim 12 , further comprising:
performing a wafer cooling process by a cooling module of the heating platform according to information detected by the detection module, wherein the cooling module comprises a plurality of cooling units, and the cooling units are arranged in array.

15. A manufacturing method, comprising:
performing a first process on a wafer, wherein the first process comprises a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, a dry etching process, a wet etching process or a chemical-mechanical polishing (CMP) process;
obtaining information of a surface condition of the wafer after performing the first process, wherein the surface condition comprises topography of a top surface of the wafer; and
performing a second process on the wafer, wherein a wafer heating process is performed on the wafer by a heating module according to the information of the surface condition during the second process, the heating module comprises a plurality of heating units, and the heating units are arranged in array.

16. The manufacturing method according to claim 15 , wherein the second process comprises a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, a dry etching process, a wet etching process or a chemical-mechanical polishing (CMP) process.

17. The manufacturing method according to claim 15 , wherein a plurality of regions of the top surface of the wafer are respectively heated by the heating units according to the topography of the top surface of the wafer during the second process.

18. The manufacturing method according to claim 15 , further comprising:
performing a wafer cooling process on the wafer by a cooling module according to the information of the surface condition, the cooling module comprises a plurality of cooling units, and the cooling units are arranged in an array.

19. The manufacturing method according to claim 18 , wherein the wafer cooling process is performed after the first process or the second process.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Peng Hsiao-Hua
• Chen Hann-Ru

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0432 Primary

  mainly by conduction · CPC title