Crystal growth apparatus with controlled center position of heating

Patent metadata

Field	Value
Publication number	US-11105016-B2
Application number	US-201916519242-A
Country	US
Kind code	B2
Filing date	Jul 23, 2019
Priority date	Jul 25, 2018
Publication date	Aug 31, 2021
Grant date	Aug 31, 2021

Abstract

A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material.

First claim

The invention claimed is:

1. A crystal growth apparatus, comprising
a crucible,
a heat-insulating material which covers a circumference of the crucible,
a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, and
a support member which supports the crucible,
wherein
the heat-insulating material has a movable part, wherein the movable part is located below the crucible and has an annular shape in plan view to surround the support member, and the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening of the heat-insulating material, and
the heat-insulating material has an immovable cylindrical part which surrounds the support member and is located between the support member and the movable part.

2. The crystal growth apparatus according to claim 1 , wherein the movable part is configured to move symmetrically with the crucible as a center, when the apparatus is observed in planar view from a vertical direction of a supporting surface by which the crucible is supported.

3. The crystal growth apparatus according to claim 1 , wherein
the movable part has a first inclined surface which is inclined relative to an operating direction of the movable part, and
the opening ratio is controlled by a distance between the first inclined surface and a second inclined surface which faces the movable part of the heat-insulating material.

4. The crystal growth apparatus according to claim 1 , wherein
the movable part is configured to move symmetrically with the crucible as a center, when the apparatus is observed in planar view from a vertical direction of a supporting surface by which the crucible is supported,
the movable part is located below the crucible,
the movable part has a first inclined surface which is inclined relative to an operating direction of the movable part,
the heat-insulating material has a second inclined surface which faces the movable part, and
the opening ratio is controlled by a distance between the first inclined surface and the second inclined surface which faces the movable part of the heat-insulating material.

5. The crystal growth apparatus according to claim 1 , wherein
the movable part is configured to move symmetrically with the crucible as a center, when the apparatus is observed in planar view from a vertical direction of a supporting surface by which the crucible is supported,
the movable part is located below the crucible,
the movable part has a first surface which is vertical to an operating direction of the movable part,
the heat-insulating material has a second surface which faces the movable part, and
the opening ratio is controlled by a distance between the first surface and the second surface which faces the movable part of the heat-insulating material.

6. The crystal growth apparatus according to claim 1 , wherein
the heat-insulating material has an immovable opposed part which faces the movable part and is located around the movable part.

7. The crystal growth apparatus according to claim 1 , wherein the movable part is configured to move in a horizontal direction.

8. The crystal growth apparatus according to claim 1 , wherein the movable part is configured to move in a vertical direction.

9. The crystal growth apparatus according to claim 1 , wherein the movable part is configured to close and open a space which is surrounded by the heat-insulating material, the crucible, and the support member.

10. The crystal growth apparatus according to claim 1 , wherein the movable part has a triangular cross-sectional shape.

11. The crystal growth apparatus according to claim 10 , wherein an outer diameter of the movable part increases from an upper end to a lower end thereof, and
an inner diameter of the movable part is unchanged.

12. The crystal growth apparatus according to claim 10 , wherein an inner diameter of the movable part increases from an upper end to a lower end and
an outer diameter of the movable part is unchanged.

13. The crystal growth apparatus according to claim 1 , wherein the movable part has a quadrilateral cross-sectional shape.

Assignees

• Showa Denko Kk

Inventors

• Muto Daisuke

Classifications

• C30B29/06

  Silicon · CPC title

• C30B23/06 Primary

  Heating of the deposition chamber, the substrate or the materials to be evaporated · CPC title

• C30B23/066 Primary

  Heating of the material to be evaporated · CPC title

• C30B23/00 Primary

  Single-crystal growth by condensing evaporated or sublimed materials · CPC title

• C23C14/0635

  Carbides · CPC title