Silicon carbide substrate, silicon carbide ingot, and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016273129-A1
Application number	US-201615165441-A
Country	US
Kind code	A1
Filing date	May 26, 2016
Priority date	Oct 17, 2011
Publication date	Sep 22, 2016
Grant date	—

Abstract

A silicon carbide substrate and a silicon carbide ingot excellent in uniformity in characteristics, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 20° C./cm or more.

First claim

1 - 7 . (canceled)

8 : A silicon carbide ingot, comprising:
a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide; and a silicon carbide layer formed on a surface of said base substrate, a surface of said silicon carbide layer located opposite to a side where said base substrate is located including a (0001) facet plane, and said (0001) facet plane including a central portion of the surface of said silicon carbide layer and extending from said central portion to a position at a distance of 10/o % of a width of said surface from an outer peripheral end of said surface.

9 : The silicon carbide ingot according to claim 8 , wherein
a portion located under a region having said (0001) facet plane in said silicon carbide layer is a high-nitrogen-concentration region higher in nitrogen concentration than a portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.

10 : The silicon carbide ingot according to claim 9 , wherein
transmittance of light having a wavelength not shorter than 450 nm and not longer than 500 nm per unit thickness in said high-nitrogen-concentration region is lower than said transmittance of light per unit thickness in the portion other than said high-nitrogen-concentration region in said silicon carbide layer.

11 : The silicon carbide ingot according to claim 8 , wherein
micropipe density of the portion located under the region having said (0001) facet plane is higher than micropipe density in the portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.

12 : A silicon carbide substrate obtained by slicing the silicon carbide ingot according to claim 8 .

13 : A silicon carbide substrate obtained by slicing said silicon carbide ingot after removing a portion other than said high-nitrogen-concentration region from the silicon carbide ingot according to claim 9 .

14 : The silicon carbide substrate according to claim 13 , wherein
variation from an average value of nitrogen concentration is not more than 10%.

15 : The silicon carbide substrate according to claim 13 , wherein
variation from an average value of dislocation density is not more than 80%.

Assignees

• Sumitomo Electric Industries

Inventors

• Sasaki Makoto
• Nishiguchi Taro

Classifications

• C30B29/36 Primary

  Carbides · CPC title

• C30B23/063

  Heating of the substrate · CPC title

• C30B23/025

  characterised by the substrate · CPC title

• C30B23/06

  Heating of the deposition chamber, the substrate or the materials to be evaporated · CPC title

• Y10T428/24273

  including aperture · CPC title