Method and apparatus for ascertaining a repair shape for processing a defect of a photolithographic mask

Patent metadata

Field	Value
Publication number	US-11079674-B2
Application number	US-201916563731-A
Country	US
Kind code	B2
Filing date	Sep 6, 2019
Priority date	Mar 8, 2017
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

The present invention relates to a method for ascertaining a repair shape for processing at least one defect of a photolithographic mask including the following steps: (a) determining at least one correction value for the repair shape of the at least one defect, wherein the correction value takes account of a position of at least one pattern element of the photolithographic mask, said at least one pattern element not contacting the at least one defect; and (b) correcting the repair shape by applying the at least one correction value.

First claim

What is claimed is:

1. A method for ascertaining a repair shape for processing at least one defect of a photolithographic mask, wherein the method includes the following steps:
a. determining at least two local spatially dependent correction values for the repair shape of the at least one defect, wherein the at least two local spatially dependent correction values take account of a position of at least one pattern element of the photolithographic mask, said at least one pattern element not contacting the at least one defect; and
b. correcting the repair shape by applying the at least two local spatially dependent correction values.

2. A method for ascertaining a repair shape for processing at least one defect of a photolithographic mask, wherein the method includes the following steps:
a. determining at least two local spatially dependent correction values for the repair shape of the at least one defect, wherein the at least two local spatially dependent correction values take account of a lateral extent of the at least one defect on a surface of a substrate of the photolithographic mask; and
b. correcting the repair shape by applying the at least two local spatially dependent correction values.

3. A method for ascertaining a repair shape for processing at least one defect of a photolithographic mask, wherein the method includes the following steps:
a. determining at least one correction value for the repair shape of the at least one defect, wherein the correction value takes account of a form of the at least one pattern element of the photolithographic mask, said at least one pattern element contacting the at least one defect; and
b. correcting the repair shape by applying the at least one correction value.

4. The method according to claim 3 , wherein the at least one correction value takes account of a lateral dimension of the at least one pattern element.

5. The method according to claim 3 , wherein the at least one correction value takes account of at least one corner of the at least one pattern element.

6. The method according to claim 5 , wherein the at least one correction value leads to a reduction in the repair shape in the vicinity of the at least one corner of the at least one pattern element in comparison with a correction value in the vicinity of a straight-lined region of the pattern element if the corner protrudes into the at least one defect and/or wherein the at least one correction value leads to an increase in the repair shape in the vicinity of the at least one corner of the at least one pattern element in comparison with a correction value in the vicinity of a straight-lined region of the pattern element if the at least one defect protrudes into the corner of the at least one pattern element.

7. The method according to claim 5 , wherein the at least one correction value takes account of the lateral dimension of the at least one pattern element and the at least one corner of the at least one pattern element.

8. The method according to claim 1 , wherein determining the at least two local spatially dependent correction values further includes:
taking account of a thickness and/or a material composition of the at least one pattern element.

9. The method according to claim 1 , wherein determining the at least two local spatially dependent correction values further includes:
taking account of the thickness and/or a material composition of the at least one defect.

10. The method according to claim 1 , wherein processing the at least one defect includes: carrying out a particle-beam-induced etching process and/or a particle-beam-induced deposition process on the corrected repair shape of the at least one defect.

11. The method according to claim 1 , wherein determining the at least two local spatially dependent correction values includes analyzing a test mask.

12. The method according to claim 1 , wherein applying the at least two local spatially dependent correction values includes: reducing an area of the repair shape by correcting at least part of an edge of the repair shape.

13. The method according to claim 1 , wherein determining the at least two local spatially dependent correction values includes combining the at least two local spatially dependent correction values of claim 2 and the at least one correction value of claim 3 .

14. The method according to claim 1 , wherein determining the at least two local spatially dependent correction values includes combining the at least two local spatially dependent correction values of claims 1 and 2 .

15. The method according to claim 13 , wherein combining the at least two local spatially dependent correction values of two claims includes a linear combination.

16. The method according to claim 1 , wherein determining the at least two local spatially dependent correction values includes: averaging at least a part of the edge of the at least one defect which does not contact the at least one pattern element; and determining a perpendicular to the tangent to the averaged edge of the at least one defect for ascertaining the distance of the averaged edge from the at least one pattern element which does not contact the at least one defect and the lateral extent of the at least one defect on the surface of the substrate.

17. The method according to claim 2 , wherein determining the at least two local spatially dependent correction values includes: forming a perpendicular in the region of the at least one pattern element which contacts the at least one defect, for the purposes of determining the lateral extent of the at least one defect and the lateral extent of the at least one pattern element which contacts the at least one defect.

18. A computer program containing instructions which, when executed by a computer system, prompt the computer system to carry out the method steps of claim 1 .

19. An apparatus for ascertaining a repair shape for processing at least one defect of a photolithographic mask, said apparatus having:
a. a measuring unit embodied to ascertain the repair shape;
b. a computing unit embodied to determine at least one correction value and/or at least two local spatially dependent correction values for the repair shape of the at least one defect, wherein:
(i) the at least two local spatially dependent correction values take account of a position of at least one pattern element of the photolithographic mask, said at least one pattern element not contacting the at least one defect;
(ii) the at least two local spatially dependent correction values take account of a lateral extent of the at least one defect on a surface of a substrate of the photolithographic mask; and/or
(iii) the at least one correction value takes account of a form of the at least one pattern element of the photolithographic mask, said at least one pattern element contacting the at least one defect; and wherein

c. the computing unit is further embodied to correct the repair shape by applying the at least one correction value and/or the at least two local spatially dependent correction values.

20. The apparatus according to claim 19 , embodied to carry out the method steps in claim 1 .

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Oster Jens
• Waiblinger Markus

Classifications

• G03F7/706837

  Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis · CPC title

• G03F1/36

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G03F1/84

  Inspecting · CPC title

• G03F1/74 Primary

  by charged particle beam [CPB], e.g. focused ion beam · CPC title

• G03F7/7065

  Defects, e.g. optical inspection of patterned layer for defects · CPC title