Method for selectively metallizing surface of ceramic substrate, ceramic product and use of ceramic product
US-2019182962-A1 · Jun 13, 2019 · US
Direct bonded copper ceramic substrate
US11076483B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11076483-B2 |
| Application number | US-201916721509-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2019 |
| Priority date | Nov 26, 2019 |
| Publication date | Jul 27, 2021 |
| Grant date | Jul 27, 2021 |
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Abstract
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A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A direct bonded copper ceramic substrate, comprising: a nitride ceramic substrate; a first passivation layer including aluminum oxide or silicon oxide doped with another metal, the other metal is titanium, vanadium, chromium, manganese, iron, nickel, or a combination thereof, and (1) the aluminum or silicon and (2) the other metal have a weight ratio of 60:40 to 99.5:0.5; and a first copper layer, wherein the first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer. 2. The direct bonded copper ceramic substrate as claimed in claim 1 , wherein the nitride ceramic substrate comprises aluminum nitride ceramic substrate or silicon nitride ceramic substrate. 3. The direct bonded copper ceramic substrate as claimed in claim 1 , wherein the nitride ceramic substrate has a thickness of 0.3 mm to 1 mm. 4. The direct bonded copper ceramic substrate as claimed in claim 1 , wherein the first passivation layer has a thickness of 1 μm to 5 μm. 5. The direct bonded copper ceramic substrate as claimed in claim 1 , wherein the first passivation layer has a thickness of 1 μm to 2 μm. 6. The direct bonded copper ceramic substrate as claimed in claim 1 , wherein the first copper layer has a thickness of 0.1 mm to 0.3 mm. 7. The direct bonded copper ceramic substrate as claimed in claim 1 , further comprising: a second passivation layer including aluminum oxide or silicon oxide doped with another metal, the other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof, and (3) the aluminum or silicon and (4) the other metal have a weight ratio of 60:40 to 99.5:0.5; and a second copper layer, wherein the second passivation layer is disposed between the bottom surface of the nitride ceramic substrate and the second copper layer. 8. The direct bonded copper ceramic substrate as claimed in claim 7 , wherein the second passivation layer has a thickness of 1 μm to 5 μm. 9. The direct bonded copper ceramic substrate as claimed in claim 7 , wherein the second passivation layer has a thickness of 1 μm to 2 μm. 10. The direct bonded copper ceramic substrate as claimed in claim 7 , wherein the second copper layer has a thickness of 0.1 mm to 0.3 mm.
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Classifications
having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title
- H10W70/692Primary
Ceramics or glasses · CPC title
Subject matter not provided for in other groups of this subclass · CPC title
by the use of a metallic or inorganic thin film adhesion layer · CPC title
- H05K1/0306Primary
Inorganic insulating substrates, e.g. ceramic, glass · CPC title
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- What does patent US11076483B2 cover?
- A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the oth…
- Who is the assignee on this patent?
- Ind Tech Res Inst
- What technology area does this patent fall under?
- Primary CPC classification H10W70/692. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 27 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).