Semiconductor resist composition, and method of forming patterns using the composition

Patent metadata

Field	Value
Publication number	US-11073761-B2
Application number	US-201816211114-A
Country	US
Kind code	B2
Filing date	Dec 5, 2018
Priority date	Jul 31, 2018
Publication date	Jul 27, 2021
Grant date	Jul 27, 2021

Abstract

A semiconductor resist composition includes an organometallic compound represented by Formula I and a solvent:
wherein L includes at least one alkylene group in the main chain. A pattern may be formed using the composition. The pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.

First claim

What is claimed is:

1. A semiconductor resist composition comprising:
an organometallic compound represented by Chemical Formula 1 and a solvent:

wherein, in Chemical Formula 1,
M 1 and M 2 are each independently selected from tin (Sn), indium (In), and antimony (Sb),
R 1 to R 6 are each independently selected from —OR a and —OC(═O)R b ,
R a and R b are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and
L is a divalent linking group comprising at least one substituted or unsubstituted C1 to C20 alkylene group in a main chain.

2. The semiconductor resist composition of claim 1 , wherein the main chain in L further comprises a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, —O—, —C(═O)—, or a combination thereof.

3. The semiconductor resist composition of claim 1 , wherein L is selected from a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C3 to C20 alkenylene group, a substituted or unsubstituted C3 to C20 alkynylene group, and a substituted or unsubstituted C1 to C10 alkyleneoxy group.

4. The semiconductor resist composition of claim 1 , wherein R a and R b are each independently selected from a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group.

5. The semiconductor resist composition of claim 1 , wherein both M 1 and M 2 are Sn.

6. The semiconductor resist composition of claim 1 , wherein the organometallic compound is represented by at least one of Chemical Formula 2 to Chemical Formula 4:

wherein, in Chemical Formula 2 to Chemical Formula 4,
R 11 to R 16 , R 21 to R 26 , and R 31 to R 36 are each independently selected from a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group, and
L is a divalent linking group comprising at least one substituted or unsubstituted C1 to C20 alkylene group in the main chain.

7. The semiconductor resist composition of claim 6 , wherein L is selected from a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C3 to C20 alkenylene group, a substituted or unsubstituted C3 to C20 alkynylene group, and a substituted or unsubstituted C1 to C10 alkyleneoxy group.

8. The semiconductor resist composition of claim 1 , wherein the organometallic compound is represented by at least one of Chemical Formula 5 to Chemical Formula 12:

9. The semiconductor resist composition of claim 1 , wherein the composition further comprises a surfactant, a cross-linking agent, a leveling agent, or a combination thereof.

10. The semiconductor resist composition of claim 9 , wherein the surfactant is selected from an alkyl benzene sulfonate salt, an alkyl pyridinium salt, polyethylene glycol, a quaternary ammonium salt, and combinations thereof.

11. The semiconductor resist composition of claim 9 , wherein the cross-linking agent is a melamine-based, substituted urea-based, or a polymer-based cross-linking agent.

12. The semiconductor resist composition of claim 1 , further comprising a silane coupling agent as an adherence enhancer.

13. A method of forming patterns, the method comprising:
coating the semiconductor resist composition of claim 1 on an etching subject layer to form a photoresist layer;
patterning the photoresist layer to form a photoresist pattern; and
etching the etching subject layer using the photoresist pattern as an etching mask.

14. The method of claim 13 , wherein the photoresist pattern is formed using light in a wavelength of about 5 nm to about 150 nm.

15. The method of claim 13 , wherein the etching subject layer is provided on a substrate.

16. The method of claim 15 , further comprising providing a resist underlayer between the substrate and the photoresist layer.

17. The method of claim 13 , further comprising:
drying the coated semiconductor resist composition at about 80° C. to about 120° C., and
curing the patterned photoresist layer at 90° C. to about 200° C.

18. The method of claim 13 , wherein the photoresist pattern has a width of about 5 nm to about 100 nm.

19. The method of claim 13 , wherein the photoresist pattern is formed using an extreme ultraviolet (EUV) light source of a wavelength of about 13.5 nm.

20. A system of forming patterns, the system comprising:
means for coating the semiconductor resist composition of claim 1 on an etching subject layer to form a photoresist layer;
means for patterning the photoresist layer to form a photoresist pattern; and
means for etching the etching subject layer using the photoresist pattern as an etching mask.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Moon Kyung Soo
• Kim Jaehyun
• Na Yoong Hee
• Namgung Ran
• Cheon Hwansung
• Chae Seungyong

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• C07F7/2224

  Compounds having one or more tin-oxygen linkages · CPC title

• G03F7/2002

  with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image · CPC title