Power amplification module

Patent metadata

Field	Value
Publication number	US-11070175-B2
Application number	US-202016777381-A
Country	US
Kind code	B2
Filing date	Jan 30, 2020
Priority date	Jul 15, 2015
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.

First claim

What is claimed is:

1. A power amplification module comprising:
a first bipolar transistor, wherein an amplified signal is output from a collector of the first bipolar transistor when a radio frequency signal is input to a base of the first bipolar transistor, the amplified signal being obtained by amplifying the radio frequency signal;
a second bipolar transistor that is thermally coupled with the first bipolar transistor, wherein the second bipolar transistor is configured to imitate operation of the first bipolar transistor when the radio frequency signal is input to a base of the second bipolar transistor;
a first resistor having a first terminal to which a second control voltage is supplied, and a second terminal connected to a collector of the second bipolar transistor and at which a third control voltage is generated, the third control voltage corresponding to a collector current of the second bipolar transistor; and
a fourth bipolar transistor configured to output a second bias current from an emitter of the fourth bipolar transistor to the base of the first bipolar transistor and to the base of the second bipolar transistor, when a power supply voltage is supplied to a collector of the fourth bipolar transistor and the third control voltage is supplied to a base of the fourth bipolar transistor.

2. The power amplification module according to claim 1 , wherein an emitter area of the second bipolar transistor is smaller than an emitter area of the first bipolar transistor.

3. The power amplification module according to claim 1 , further comprising:
a second resistor and a third resistor, wherein:
a first end of the second resistor is connected to the base of the first bipolar transistor, and a second end of the second resistor is connected to a first end of the third resistor, and
the first end of the third resistor is connected to the emitter of the fourth bipolar transistor and to the second end of the second resistor, and a second end of the third resistor is connected to the base of the second bipolar transistor.

4. The power amplification module according to claim 2 , further comprising:
a second resistor and a third resistor, wherein:
a first end of the second resistor is connected to the base of the first bipolar transistor, and a second end of the second resistor is connected to a first end of the third resistor,
the first end of the third resistor is connected to the emitter of the fourth bipolar transistor and to the second end of the second resistor, and a second end of the third resistor is connected to the base of the second bipolar transistor.

5. The power amplification module according to claim 1 , further comprising:
a third resistor, wherein:
a first end of the third resistor is connected to the emitter of the fourth bipolar transistor, and a second end of the third resistor is connected to the base of the first bipolar transistor and to the base of the second bipolar transistor.

6. The power amplification module according to claim 2 , further comprising:
a third resistor, wherein:
a first end of the third resistor is connected to the emitter of the fourth bipolar transistor, and a second end of the third resistor is connected to the base of the first bipolar transistor and to the base of the second bipolar transistor.

7. The power amplification module according to claim 1 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor via the first capacitor; and
a second capacitor, wherein the radio frequency signal is input to the base of the second bipolar transistor via the second capacitor.

8. The power amplification module according to claim 2 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor via the first capacitor; and
a second capacitor, wherein the radio frequency signal is input to the base of the second bipolar transistor via the second capacitor.

9. The power amplification module according to claim 3 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor via the first capacitor; and
a second capacitor, wherein the radio frequency signal is input to the base of the second bipolar transistor via the second capacitor.

10. The power amplification module according to claim 5 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor via the first capacitor; and
a second capacitor, wherein the radio frequency signal is input to the base of the second bipolar transistor via the second capacitor.

11. The power amplification module according to claim 1 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor and to the base of the second bipolar transistor via the first capacitor.

12. The power amplification module according to claim 2 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor and to the base of the second bipolar transistor via the first capacitor.

13. The power amplification module according to claim 3 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor and to the base of the second bipolar transistor via the first capacitor.

14. The power amplification module according to claim 5 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor and to the base of the second bipolar transistor via the first capacitor.

15. The power amplification module according to claim 1 , further comprising:
a fourth resistor, wherein a first end of the fourth resistor is connected to the base of the fourth bipolar transistor, and a second end of the fourth resistor is connected to the second end of the first resistor.

16. The power amplification module according to claim 2 , further comprising:
a fourth resistor, wherein a first end of the fourth resistor is connected to the base of the fourth bipolar transistor, and a second end of the fourth resistor is connected to the second end of the first resistor.

17. The power amplification module according to claim 3 , further comprising:
a fourth resistor, wherein a first end of the fourth resistor is connected to the base of the fourth bipolar transistor, and a second end of the fourth resistor is connected to the second end of the first resistor.

18. The power amplification module according to claim 5 , further comprising:
a fourth resistor, wherein a first end of the fourth resistor is connected to the base of the fourth bipolar transistor, and a second end of the fourth resistor is connected to the second end of the first resistor.

19. The power amplification module according to claim 7 , further comprising:
a fourth resistor, wherein a first end of the fourth resistor is connected to the base of the fourth bipolar transistor, and a second end of the fourth resistor is connected to the second end of the first resistor.

20. The power amplification module according to claim 11 , further comprising:
a fourth resistor, wherein a first end of the fourth resistor is connected to the base of the fourth bipolar transistor, and a second end of the fourth resistor is connected to the second end of the first resistor.

Assignees

• Murata Manufacturing Co

Inventors

• Hase Masatoshi

Classifications

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10D62/133

  Emitter regions of BJTs · CPC title

• H10D10/80

  Heterojunction BJTs · CPC title

• H03F1/302 Primary

  in bipolar transistor amplifiers (H03F1/303, H03F1/305, H03F1/307 take precedence) · CPC title

• H03F3/21

  with semiconductor devices only {(H03F3/245 takes precedence)} · CPC title