Power amplification module

Patent metadata

Field	Value
Publication number	US-10554182-B2
Application number	US-201816162954-A
Country	US
Kind code	B2
Filing date	Oct 17, 2018
Priority date	Jul 15, 2015
Publication date	Feb 4, 2020
Grant date	Feb 4, 2020

Abstract

A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.

First claim

What is claimed is:

1. A power amplification module comprising:
a first bipolar transistor, wherein a radio frequency signal is input to a base of the first bipolar transistor, and an amplified signal obtained by amplifying the radio frequency signal is output from a collector of the first bipolar transistor;
a second bipolar transistor that imitates operation of the first bipolar transistor when the radio frequency signal is input to a base of the second bipolar transistor;
a third bipolar transistor, wherein a power supply voltage is supplied to a collector of the third bipolar transistor, a first control voltage is supplied to a base of the third bipolar transistor, and a first bias current is output from an emitter of the third bipolar transistor to the base of the first bipolar transistor and the base of the second bipolar transistor; and
a first resistor, wherein a second control voltage is supplied to a first end of the first resistor, a second end of the first resistor is connected to a collector of the second bipolar transistor, and the first resistor generates a third control voltage at the second end of the first resistor, the third control voltage corresponding to a collector current of the second bipolar transistor.

2. The power amplification module according to claim 1 , wherein an emitter area of the second bipolar transistor is smaller than an emitter area of the first bipolar transistor.

3. The power amplification module according to claim 1 , further comprising:
a second resistor, wherein a first end of the second resistor is connected to the emitter of the third bipolar transistor, and a second end of the second resistor is connected to the base of the first bipolar transistor; and
a third resistor, wherein a first end of the third resistor is connected to the emitter of the third bipolar transistor, and a second end of the third resistor is connected to the base of the second bipolar transistor,
wherein the radio frequency signal is supplied to a node between the second end of the second resistor and the base of the first bipolar transistor, and to a node between the second end of the third resistor and the base of the second bipolar transistor.

4. The power amplification module according to claim 1 , further comprising:
a fourth resistor, wherein a first end of the fourth resistor is connected to the emitter of the third bipolar transistor, and a second end of the fourth resistor is connected to the base of the first bipolar transistor and the base of the second bipolar transistor;
wherein the radio frequency signal is supplied to a node between the second end of the fourth resistor, the base of the first bipolar transistor, and the base of the second bipolar transistor.

5. The power amplification module according to claim 4 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor and the base of the second bipolar transistor via the first capacitor.

6. A power amplification module comprising:
a first bipolar transistor, wherein a radio frequency signal is input to a base of the first bipolar transistor, and an amplified signal obtained by amplifying the radio frequency signal is output from a collector of the first bipolar transistor;
a second bipolar transistor that imitates operation of the first bipolar transistor when the radio frequency signal is input to a base of the second bipolar transistor;
a first field effect transistor, wherein a power supply voltage is supplied to a drain of the first field effect transistor, a first control voltage is supplied to a gate of the first field effect transistor, and a first bias current is output from a source of the first field effect transistor to the base of the first bipolar transistor and the base of the second bipolar transistor; and
a first resistor, wherein a second control voltage is supplied to a first end of the first resistor and a second end of the first resistor is connected to a collector of the second bipolar transistor, and the first resistor generates a third control voltage at the second end of the first resistor, the third control voltage corresponding to a collector current of the second bipolar transistor.

7. The power amplification module according to claim 6 , wherein an emitter area of the second bipolar transistor is smaller than an emitter area of the first bipolar transistor.

8. The power amplification module according to claim 6 , further comprising:
a second resistor, wherein a first end of the second resistor is connected to the source of the first field effect transistor, and a second end of the second resistor is connected to the base of the first bipolar transistor; and
a third resistor, wherein a first end of the third resistor is connected to the source of the first field effect transistor, and a second end of the third resistor is connected to the base of the second bipolar transistor;
wherein the radio frequency signal is supplied to a node between the second end of the second resistor and the base of the first bipolar transistor, and to a node between the second end of the third resistor and the base of the second bipolar transistor.

9. The power amplification module according to claim 6 , further comprising:
a fourth resistor, wherein a first end of the fourth resistor is connected to the source of the first field effect transistor, and a second end of the fourth resistor is connected to the base of the first bipolar transistor and the base of the second bipolar transistor;
wherein the radio frequency signal is supplied to a node between the second end of the fourth resistor, the base of the first bipolar transistor, and the base of the second bipolar transistor.

10. The power amplification module according to claim 9 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor and the base of the second bipolar transistor via the first capacitor.

Assignees

• Murata Manufacturing Co

Inventors

• Hase Masatoshi

Classifications

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H03F3/24

  of transmitter output stages · CPC title

• H03F3/245

  with semiconductor devices only · CPC title

• H03G3/3042

  in modulators, frequency-changers, transmitters or power amplifiers · CPC title

• H03F2200/18

  the bias of the gate of a FET being controlled by a control signal · CPC title