Magnetic tunnel junction devices including an optimization layer
US-2019207087-A1 · Jul 4, 2019 · US
Magnetic memory device and manufacturing method of the same
US11069850B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11069850-B2 |
| Application number | US-201916568050-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2019 |
| Priority date | Mar 18, 2019 |
| Publication date | Jul 20, 2021 |
| Grant date | Jul 20, 2021 |
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- Title
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Abstract
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According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a variable magnetization direction, a first insulating layer provided along a side surface of the stacked structure and having an upper end located at a position lower than an upper end of the side surface of the stacked structure, and a second insulating layer covering the first insulating layer and having an upper end located at a position higher than the upper end of the first insulating layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetic memory device comprising: a stacked structure including a first magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a variable magnetization direction; a first insulating layer provided along a side surface of the stacked structure, an upper end of the first insulating layer being located at a position lower than an upper end of a side surface of the second magnetic layer; and a second insulating layer covering the first insulating layer, an upper end of the second insulating layer being located at a position higher than the upper end of the first insulating layer. 2. The device of claim 1 , wherein the second magnetic layer includes a first magnetic material part formed of a magnetic material, a nonmagnetic material part provided on the first magnetic material part and formed of a nonmagnetic material, and a second magnetic material part provided on the nonmagnetic material part and formed of a magnetic material. 3. The device of claim 2 , wherein the second magnetic material part is thicker than the first magnetic material part. 4. The device of claim 2 , wherein a thickness of the second magnetic material part is at least ten times as large as a thickness of the first magnetic material part. 5. The device of claim 1 , wherein the first magnetic layer has perpendicular magnetization, and the second magnetic layer has perpendicular magnetization. 6. The device of claim 1 , wherein the stacked structure forms a spin transfer torque (STT) magnetoresistive element.
Assignees
Inventors
Classifications
via a non-magnetic spacer · CPC title
Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title
Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers · CPC title
- H01L43/02Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US11069850B2 cover?
- According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a variable magnetization direction, a first insulating layer provided along a side surface of the stacked stru…
- Who is the assignee on this patent?
- Toshiba Memory Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L43/02. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 20 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).