Semiconductor storage device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11069700-B2
Application number	US-201916555418-A
Country	US
Kind code	B2
Filing date	Aug 29, 2019
Priority date	Mar 12, 2019
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

First claim

What is claimed is:

1. A semiconductor storage device comprising:
a first stacked body that comprises a plurality of first electrode layers stacked in a first direction;
a second stacked body, disposed above the first stacked body, that comprises a plurality of second electrode layers stacked in the first direction;
a first pillar, extending in the first direction through the first stacked body, that comprises a first semiconductor layer;
a second pillar, extending in the first direction through the second stacked body, that comprises a second semiconductor layer, the second semiconductor layer electrically connected to the first semiconductor layer;
a first charge storage layer provided between the plurality of first electrode layers and first semiconductor layer;
a second charge storage layer provided between the plurality of second electrode layers and second semiconductor layer;
a first division film, extending in the first direction through the first stacked body, that divides the first stacked body in a second direction crossing the first direction;
a second division film, extending in the first direction through the second stacked body, that divides the second stacked body in the second direction; and
a plurality of first films, extending in the first direction through the second stacked body and separated from each other in a third direction crossing the first direction and the second direction, that are disposed above the first division film, a material of each of the plurality of first films identical to a material of the first division film.

2. The semiconductor storage device according to claim 1 , no memory pillar is disposed between the second division film and the plurality of first films.

3. The semiconductor storage device according to claim 1 , further comprising:
a third division film, extending in the first direction through the second stacked body, that is separated from the second division film along the second direction, wherein the plurality of first films are disposed between the second division film and the third separation film.

4. The semiconductor storage device according to claim 3 ,
wherein no memory pillar is disposed between the third division film and the plurality of first films.

5. The semiconductor storage device according to claim 1 ,
wherein the plurality of first films are disposed in a dotted manner along a third direction orthogonal to the first direction and the second direction.

6. The semiconductor storage device according to claim 1 , wherein a width of each of the second division film is smaller than a width of each of the first films.

7. The semiconductor storage device according to claim 1 , wherein the second division film and each of the first films have a circular shape or an elliptic shape from a plan view.

8. The semiconductor storage device according to claim 1 , further comprising a plurality of protective films that each surrounds a respective one of the plurality of first films and separates the respective first film from the second electrode layers.

9. The semiconductor storage device according to claim 8 , wherein each of the protective films is formed of an oxide material.

10. A semiconductor storage device comprising:
a first stacked body that comprises a plurality of first electrode layers stacked in a first direction;
a second stacked body, disposed above the first stacked body, that comprises a plurality of second electrode layers stacked in the first direction;
a first pillar, extending in the first direction through the first stacked body, that comprises a first semiconductor layer;
a second pillar, extending in the first direction through the second stacked body, that comprises a second semiconductor layer, the second semiconductor layer electrically connected to the first semiconductor layer;
a first charge storage layer provided between the plurality of first electrode layers and first semiconductor layer;
a second charge storage layer provided between the plurality of second electrode layers and second semiconductor layer;
a plurality of first films extending in the first direction through the first stacked body and separated from each other in a third direction crossing the first direction;
a plurality of second films extending in the first direction through the second stacked body and separated from each other in the third direction;
a plurality of third films extending in the first direction through the second stacked body and separated from each other in the third direction, the plurality of third films is disposed on the plurality of first films; and a plurality of fourth films that each surrounds a respective one of the plurality of third films.

11. The semiconductor storage device according to claim 10 , no memory pillar is disposed between the plurality of second films and the plurality of third films.

Assignees

• Toshiba Memory Corp

Inventors

• Sakata Koichi
• Suzuki Kazutaka
• Ashidate Hiroaki
• Sato Katsuhiro
• Nakaoka Satoshi

Classifications

• H10D88/00

  Three-dimensional [3D] integrated devices · CPC title

• H01L27/11568

  Electricity · mapped topic

• H01L27/11573

  Electricity · mapped topic

• H01L27/0688

  Electricity · mapped topic

• H01L27/11565

  Electricity · mapped topic