Si precursors for deposition of SiN at low temperatures

Patent metadata

Field	Value
Publication number	US-11069522-B2
Application number	US-201916540349-A
Country	US
Kind code	B2
Filing date	Aug 14, 2019
Priority date	Mar 14, 2013
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

First claim

What is claimed is:

1. A method of depositing a silicon nitride thin film on a substrate in a reaction space comprising a susceptor and a showerhead plate by plasma enhanced atomic layer deposition (PEALD), the method comprising:
carrying out a plurality of deposition cycles, at least one of the deposition cycles comprising:
(a) introducing a vapor-phase silicon reactant consisting of silicon, iodine and hydrogen into the reaction space;
(b) removing excess silicon reactant and reaction byproducts from the reaction space with the aid of a purge gas;
(c) contacting the substrate with a plasma generated from a reactant gas comprising nitrogen above the substrate and between the susceptor and the showerhead plate; and
(d) removing excess plasma and reaction byproducts from the reaction space with the aid of the purge gas;
wherein there is a gap of 0.5 to 5 cm between the susceptor and the showerhead plate;
wherein the plasma is produced by applying RF power with a density of from 0.02 W/cm 2 to 2.0 W/cm 2 to the reactant gas between the susceptor and the showerhead plate; and
wherein the reactant gas is flowed continuously to the reaction space throughout the deposition cycle.

2. The method of claim 1 , wherein the RF power density is from 0.05 W/cm 2 to 1.5 W/cm 2 .

3. The method of claim 1 , wherein the silicon reactant is H 2 SiI 2 .

4. The method of claim 1 , wherein the reactant gas serves as the purge gas.

5. The method of claim 1 , wherein the reactant gas comprises a gas selected from the group consisting of NH 3 , N 2 H 4 , an N 2 /H 2 mixture, N 2 , and any mixtures thereof.

6. The method of claim 1 , wherein the reactant gas comprises N 2 and H 2 gases.

7. The method of claim 6 , wherein the N 2 and H 2 gases flow continuously during the deposition cycle.

8. The method of claim 6 , wherein the reactant gas additionally comprises a noble gas.

9. The method of claim 1 , wherein the gap between the susceptor and the showerhead plate is about 0.8 cm to about 3.0 cm.

10. The method of claim 1 , wherein the silicon nitride thin film is formed on a three-dimensional structure.

11. The method of claim 10 , wherein the silicon nitride thin film exhibits a step coverage and pattern loading effect of at least about 80%.

12. The method of claim 10 , wherein a ratio of an etch rate of the silicon nitride thin film in 0.5% aqueous HF on a sidewall of the three-dimensional structure to an etch rate of the silicon nitride thin film in 0.5% aqueous HF on a top surface of the three-dimensional structure is less than 2.

13. The method of claim 1 , wherein an etch rate of the silicon nitride thin film is less than about 4 nm/min in 0.5% aqueous HF.

14. The method of claim 1 , wherein the substrate is not contacted with a reactive species generated by a plasma from Ar.

15. The method of claim 1 , wherein the plasma is produced by generating a plasma discharge in the reactant gas for a first period of time, extinguishing the plasma discharge for a second period of time, and generating the plasma discharge in the reactant gas for a third period of time.

16. A plasma enhanced atomic layer deposition (PEALD) method for forming a silicon nitride thin film, the method comprising a plurality of cycles, each cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase pulse of a silicon reactant and a second reactant comprising a reactive species generated by a plasma from a gas comprising nitrogen,
wherein the silicon reactant consists of silicon, hydrogen and iodine;
wherein the reaction space comprises a susceptor and a showerhead plate with a gap of 0.5 to 5 cm between the susceptor and the showerhead plate;
wherein the plasma is formed by applying RF power with a density of from 0.02 W/cm 2 to 2.0 W/cm 2 to the gas comprising nitrogen between the susceptor and the showerhead plate; and
wherein the gas comprising nitrogen flows continuously throughout the cycle.

17. The method of claim 16 , wherein the reactive species are generated by a plasma from a gas comprising N 2 gas and H 2 gas.

18. The method of claim 17 , wherein the gas comprising N 2 gas and H 2 gas additionally comprises a noble gas.

Assignees

• Asm Ip Holding Bv

Inventors

• Niskanen Antti J
• Chen Shang
• Pore Viljami
• Fukazawa Atsuki
• Fukuda Hideaki
• Haukka Suvi P

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/69433 Primary

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title