Substrate processing method, substrate processing apparatus and recording medium

Patent metadata

Field	Value
Publication number	US-10403518-B2
Application number	US-201615759932-A
Country	US
Kind code	B2
Filing date	Sep 14, 2016
Priority date	Sep 16, 2015
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of SiGe, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of SiO2, which exists under the removing target film, can be appropriately left.

First claim

We claim:

1. A substrate processing method of processing a peripheral portion of a substrate, the substrate processing method comprising:
a substrate rotating process of holding and rotating the substrate having an underlying film and a removing target film which is formed on the underlying film and made of any one of silicon germanium, amorphous silicon and polysilicon;
a first processing process of etching the removing target film by supplying onto the peripheral portion of the substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and
a second processing process of etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid.

2. The substrate processing method of claim 1 , further comprising:
a pre-processing process of supplying, before the first processing process, an organic material cleaning solution onto the peripheral portion of the substrate being rotated.

3. The substrate processing method of claim 1 ,
wherein the removing target film comprises an upper layer and a lower layer which is formed under the upper layer and thinner than the upper layer,
the first processing process is performed only for a time period during which the upper layer is etched, and
the second processing process is performed only for a time period during which the lower layer is etched.

4. The substrate processing method of claim 3 , further comprising:
a rinsing process of rinsing the substrate by using DIW after a completion of the first processing process and before a start of the second processing process.

5. The substrate processing method of claim 1 ,
wherein the substrate has the underlying film made of SiO 2 under the removing target film.

Assignees

• Tokyo Electron Ltd

Inventors

• Nanba Hiromitsu
• Ueki Tatsuhiro

Classifications

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P50/642 Primary

  Chemical etching · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P50/667

  by liquid etching only · CPC title