Photoresist stripping composition and method

Patent metadata

Field	Value
Publication number	US-11054749-B2
Application number	US-201916412563-A
Country	US
Kind code	B2
Filing date	May 15, 2019
Priority date	May 22, 2018
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

An organic photoresist stripping composition and method of using the composition with silicon wafers having an insulating layer and metallization on the wafers, having an aryl sulfonic acid or alkylaryl sulfonic acid or mixtures thereof; 1,3-dihydroxybenzene (resorcinol) or sorbitol or mixtures thereof; one or more hydrocarbon solvents having a flash point of greater than about 65° C., and optionally less than about 0.5% by weight water based on the total weight of the composition. The composition may also be used for the removal of other materials from other substrates.

First claim

The invention claimed is:

1. A composition for the removal of an organic photoresist and/or other materials from a substrate, which comprises: from about 20 to about 40% by weight aryl sulfonic acid or alkylaryl sulfonic acid or mixtures thereof; about 0.2 to about 3.5% weight 1,3-dihydroxybenzene (resorcinol); and from about 60 to about 85% by weight of one or more hydrocarbon solvents having a flash point of greater than about 65° C., wherein said weight % are based on the total weight of the composition.

2. The composition of claim 1 , further comprising water at less than about 3% by weight based on the total weight of the composition.

3. The composition of claim 1 comprising greater than about 0.08% by weight sulfuric acid.

4. The composition of claim 1 wherein said composition comprises said aryl sulfonic acid.

5. The composition of claim 1 wherein said composition comprises said alkylaryl sulfonic acid.

6. The composition of claim 1 wherein said composition comprises 0.2 to about 2.0 weight % of said 1,3-dihydroxybenzene.

7. The composition of claim 2 wherein said composition comprises said water at a positive amount up to about 0.5 weight percent or less.

8. The composition of claim 3 wherein said composition comprises sulfuric acid in an amount from about 0.08 to less than 1 percent by weight based on the total weight of the composition.

9. The composition of claim 1 wherein said composition comprises said 1,3-dihydroxybenzene in an amount from about 0.5 to about 3.5 weight percent based on the total weight of the composition.

10. The composition of claim 9 wherein said composition comprises said aryl sulfonic acid or said alkylaryl sulfonic acid or said mixtures thereof in an amount from about 22 to about 38% by weight based on the total weight of the composition.

11. The composition of claim 10 wherein said composition comprises said water at a positive amount up to about 0.5 weight percent or less based on the total weight of the composition.

12. The composition of claim 1 wherein said one or more hydrocarbon solvents have a flash point of from about 65° C. to 85° C., or from about 90° C. to 100° C.

13. The composition of claim 1 wherein said one or more hydrocarbon solvents are refined from petroleum and said hydrocarbons comprise C8-C18 hydrocarbons at an amount greater than about 50% of the total weight of said hydrocarbon solvents in said composition.

14. The composition of claim 1 wherein said one or more hydrocarbon solvents comprises greater than 50% of aliphatic containing hydrocarbons by weight of the total weight of the hydrocarbon solvents in said composition.

15. The composition of claim 1 wherein said one or more hydrocarbon solvents comprises greater than 50% of aromatic containing hydrocarbons by weight of the total weight of the hydrocarbon solvents in said composition.

16. The composition of claim 1 wherein said hydrocarbon solvent comprises greater than 50% by weight xylene.

17. The composition of claim 16 wherein said composition comprises water at a positive amount up to about 0.5 weight percent or less.

18. A method of stripping photoresist and/or other materials from a substrate, which comprises the steps of: providing the composition of claim 1 and contacting the photoresist with the composition at a temperature from about 60 to about 100° C. for from about 5 to about 120 minutes.

19. The method of claim 18 wherein the substrate is a silicon wafer having a silicon dioxide insulation layer metallized with one or more metals selected from aluminum, titanium, titanium tungsten, silver, nickel, nickel vanadium and copper.

20. The method of claim 19 wherein said method provides Al etch rates of 2 Å/min or less, Ni etch rates of 1 Å/min or less, or NiV etch rates of 3 Å/min or less.

21. A composition for the removal of an organic photoresist and/or other materials from a substrate, which comprises: from about 20 to about 40% by weight aryl sulfonic acid or alkylaryl sulfonic acid or mixtures thereof; about 0.2 to about 3.5% weight 1,3-dihydroxybenzene (resorcinol); and from about 60 to about 85% by weight of one or more hydrocarbon solvents having a boiling point of greater than about 180° C., wherein said weight % are based on the total weight of the composition.

Assignees

• Versum Mat Us Llc

Inventors

• Peters Richard D
• Phenis Michael
• Acra Travis

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/287 Primary

  by chemical means · CPC title

• G03F7/426 Primary

  containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides · CPC title

• G03F7/425

  containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen · CPC title

• G03F7/423

  containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds · CPC title