Electromagnetic wave attenuator and electronic device

Patent metadata

Field	Value
Publication number	US-11049818-B2
Application number	US-201916564008-A
Country	US
Kind code	B2
Filing date	Sep 9, 2019
Priority date	Jan 28, 2019
Publication date	Jun 29, 2021
Grant date	Jun 29, 2021

Abstract

According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.

First claim

What is claimed is:

1. An electromagnetic wave attenuator, comprising:
a multilayer member; and
a magnetic member,
the multilayer member including a plurality of magnetic layers and a plurality of nonmagnetic layers, the plurality of nonmagnetic layers being conductive,
a direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers being aligned with a first direction from the multilayer member toward the magnetic member,
one of the plurality of nonmagnetic layers being between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers,
a thickness along the first direction of the magnetic member being not less than ½ of a thickness along the first direction of the multilayer member,
wherein the magnetic member directly contacts the multilayer member.

2. The attenuator according to claim 1 , wherein the other one of the plurality of nonmagnetic layers contacts the magnetic member.

3. The attenuator according to claim 1 , wherein the one of the plurality of magnetic layers contacts the magnetic member.

4. The attenuator according to claim 1 , wherein the thickness along the first direction of the magnetic member is not less than 5 times a thickness along the first direction of the one of the plurality of magnetic layers.

5. The attenuator according to claim 1 , wherein a thickness along the first direction of the one of the plurality of nonmagnetic layers is not more than ⅕ of the thickness along the first direction of the magnetic member.

6. The attenuator according to claim 1 , wherein
the magnetic member includes a first member region and a second member region,
the first member region is between the second member region and the multilayer member in the first direction,
the first member region includes a plurality of first crystal grains,
the second member region includes a plurality of second crystal grains, and
an average value of sizes of the plurality of first crystal grains is less than an average value of sizes of the plurality of second crystal grains.

7. The attenuator according to claim 1 , wherein
the magnetic member has a first member surface and a second member surface,
the first member surface is between the second member surface and the multilayer member in the first direction,
the first member surface includes a plurality of first crystal grains,
the second member surface includes a plurality of second crystal grains, and
an average value of sizes of the plurality of first crystal grains is less than an average value of sizes of the plurality of second crystal grains.

8. The attenuator according to claim 1 , wherein
the one of the plurality of magnetic layers includes third crystal grains, and
an average value of sizes of the third crystal grains is 40 nm or less.

9. The attenuator according to claim 1 , wherein
the one of the plurality of magnetic layers has a first magnetic layer surface opposing the one of the plurality of nonmagnetic layers,
the first magnetic layer surface includes a first top portion and a first bottom portion, and
a distance along the first direction between the first top portion and the first bottom portion is 10 nm or more.

10. The attenuator according to claim 1 , wherein
the one of the plurality of magnetic layers has a first magnetic layer surface opposing the one of the plurality of nonmagnetic layers,
the first magnetic layer surface includes a first top portion, a second top portion, and a first bottom portion,
a position of the first bottom portion in a second direction is between a position of the first top portion in the second direction and a position of the second top portion in the second direction, the second direction crossing the first direction, and
at least a portion of the one of the plurality of nonmagnetic layers is between the first top portion and the second top portion in the second direction.

11. The attenuator according to claim 1 , wherein
the one of the plurality of magnetic layers includes a plurality of magnetic films and a plurality of nonmagnetic films,
a direction from one of the plurality of magnetic films toward an other one of the plurality of magnetic films is aligned with the first direction,
one of the plurality of nonmagnetic films is between the one of the plurality of magnetic films and the other one of the plurality of magnetic films,
a thickness along the first direction of the one of the plurality of magnetic films is thicker than a thickness along the first direction of the one of the plurality of nonmagnetic films, and
the thickness along the first direction of the one of the plurality of nonmagnetic films is not less than 0.5 nm and not more than 7 nm.

12. The attenuator according to claim 11 , wherein at least a portion of the at least one of the plurality of nonmagnetic films includes at least one selected from the group consisting of Cu, Ta, Ti, W, Mo, Nb, and Hf.

13. The attenuator according to claim 11 , wherein at least a portion of the at least one of the plurality of magnetic films includes at least one selected from the group consisting of Co, Ni, and Fe.

14. The attenuator according to claim 1 , wherein at least a portion of the one of the plurality of magnetic layers includes at least one selected from the group consisting of Co, Ni, and Fe.

15. The attenuator according to claim 14 , wherein the at least a portion of the one of the plurality of magnetic layers further includes at least one selected from the group consisting of Cu and Mo.

16. The attenuator according to claim 1 , wherein
at least a portion of the one of the plurality of magnetic layers includes Fe 100_x1-x2αx1 N x2 , and
α includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al.

17. The attenuator according to claim 1 , wherein at least a portion of the one of the plurality of nonmagnetic layers further includes at least one element selected from the group consisting of Cu, Al, Ni, Cr, Mn, Mo, Zr, and Si.

18. The attenuator according to claim 1 , wherein an orientation of a magnetization of at least a portion of the one of the plurality of magnetic layers crosses an orientation of a magnetization of at least a portion of the other one of the plurality of magnetic layers in a plane perpendicular to the first direction.

19. An electronic device, comprising:
the electromagnetic wave attenuator according to claim 1 ; and
an electronic element.

Assignees

• Toshiba Kk
• Shibaura Mechatronics Corp

Inventors

• Kikitsu Akira
• Kurosaki Yoshinari
• Yamada Kenichiro
• Matsunaka Shigeki

Classifications

• H10W42/287

  materials for magnetic shielding, e.g. ferromagnetic materials · CPC title

• H10W42/276

  the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title