Dual selective deposition

Patent metadata

Field	Value
Publication number	US-11047040-B2
Application number	US-201916594365-A
Country	US
Kind code	B2
Filing date	Oct 7, 2019
Priority date	Apr 16, 2014
Publication date	Jun 29, 2021
Grant date	Jun 29, 2021

Abstract

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

First claim

What is claimed is:

1. A method comprising:
selectively depositing a first dielectric material on a first dielectric surface of a substrate relative to a second metal surface of the substrate by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant; and
selectively depositing a second material on the second metal surface of the substrate relative to the first dielectric surface of the substrate by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a third precursor and a fourth reactant, wherein the second material comprises a second dielectric material that is different from the first dielectric material, and
wherein the second dielectric material is selected from germanium oxide, antimony oxide, bismuth oxide, magnesium oxide, aluminum oxide, silicon oxide and titanium oxide.

2. The method of claim 1 , wherein the first dielectric material comprises germanium oxide, antimony oxide, bismuth oxide, magnesium oxide, aluminum oxide, silicon oxide, nickel oxide, iron oxide, titanium oxide or cobalt oxide.

3. The method of claim 1 , wherein the first dielectric surface of the substrate and the second metal surface of the substrate are adjacent.

4. The method of claim 1 , wherein the first precursor comprises a metal precursor and the second reactant comprises an oxygen source.

5. The method of claim 4 , wherein the metal precursor is selected from the group consisting of metal betadiketonate compounds, metal betadiketiminato compounds, metal aminoalkoxide compounds, metal amidinate compounds, metal cyclopentadienyl compounds, and metal carbonyl compounds.

6. The method of claim 4 , wherein the oxygen source is selected from a group consisting of: water, ozone, molecular oxygen, N 2 O, NO, NO 2 , ClO 2 , HClO 4 , peracids, alcohols, oxygen radicals, hydroxyl radical, and H 2 O 2 .

7. The method of claim 1 , wherein the first dielectric material is deposited on the first dielectric surface of the substrate relative to the second metal surface of the substrate with a selectivity of at least about 80%.

8. The method of claim 1 , wherein the second material is deposited on the second metal surface of the substrate relative to the first dielectric surface of the substrate with a selectivity of at least about 80%.

9. The method of claim 1 , further comprising passivating the second metal surface of the substrate prior to selectively depositing the first dielectric material on the first dielectric surface.

10. The method of claim 1 , further comprising treating the first dielectric surface to inhibit deposition of the second material thereon prior to depositing the second material on the second metal surface.

11. The method of claim 1 , wherein at least one of selectively depositing the first dielectric material and selectively depositing the second material comprises an atomic layer deposition (ALD) process.

12. The method of claim 1 , wherein one of selectively depositing the first dielectric material and selectively depositing the second material comprises a chemical vapor deposition (CVD) process.

13. The method of claim 1 , wherein the first dielectric surface comprises SiO 2 , MgO, GeO 2 , or Al 2 O 3 .

14. The method of claim 1 , wherein the second metal surface comprises a metal selected from a group consisting of Cu, Ru, Al, W, Ni, Co and Sb.

15. The method of claim 1 , wherein the second metal surface is oxidized to provide a metal oxide surface prior to depositing the first dielectric material on the first dielectric surface.

16. The method of claim 1 , wherein the first dielectric material is selectively deposited on the first dielectric surface of the substrate and the second material is selectively deposited on the second metal surface of the substrate in the same reactor.

17. The method of claim 1 , wherein the first dielectric material is selectively deposited on the first dielectric surface of the substrate and the second material is selectively deposited on the second metal surface of the substrate without further processing in between selective deposition of the first dielectric material and selective deposition of the second material.

18. The method of claim 1 , wherein the first material is selectively deposited on the first dielectric surface of a substrate and the second material is selectively deposited on the second metal surface of the substrate without an airbreak in between selective deposition of the first dielectric material and selective deposition of the second material.

Assignees

• Asm Ip Holding Bv

Inventors

• Haukka Suvi P
• Matero Raija H
• Tois Eva
• Niskanen Antti
• Tuominen Marko
• Huotari Hannu
• Pore Viljami J

Classifications

• H10P14/432 Primary

  using selective deposition · CPC title

• H10W20/074

  of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/408

  of copper or solid solutions thereof · CPC title