Middle of the line self-aligned direct pattern contacts

Patent metadata

Field	Value
Publication number	US-11043418-B2
Application number	US-201916685648-A
Country	US
Kind code	B2
Filing date	Nov 15, 2019
Priority date	Jan 11, 2018
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain contact in electrical connection with the source/drain regions, respectively; and a contact structure with a re-entrant profile in electrical connection with the source/drain contact and the metallization of the at least one gate structure, respectively.

First claim

What is claimed:

1. A method comprising:
forming a plurality of gate structures each of which comprise source/drain regions;
forming a plurality of source/drain contacts in electrical connection with the source/drain regions of the plurality of gate structures;
forming, with a single metallization, a set of contact structures with a re-entrant profile in electrical connection with selected source/drain contacts of the plurality of source/drain contacts and the selected gate structures of the plurality of gate structures; and
forming metal wiring features in electrical connection with sidewalls of additional re-entrant contact structures, wherein the metal wiring features and the additional re-entrant contact structures are formed on a same wiring level in a tip-to-tip connection in a lateral orientation.

2. The method of claim 1 , further comprising forming spacers which separate each of the plurality of gate structures from each of the plurality of source/drain contacts.

3. The method of claim 2 , wherein the forming of the set of contact structures comprises:
forming a first contact structure with a re-entrant profile and a stepped profile overhanging the spacers on opposing sides of a source drain/contact of the plurality of source/drain contacts, the first contact structure being in electrical connection with the source/drain contact;
forming a second contact structure with a re-entrant profile and a stepped profile overhanging the spacers on opposing sides of at least one gate structure of the plurality of gate structures, the second contact being in electrical connection with the at least one gate structure; and
forming additional contact structures in electrical contact with selected source/drain contacts and additional gate structures of the plurality of gate structures, the additional contact structures having a reverse tapered profile and at least one of the additional contact structures being in electrical connection with two of the additional gate structures while also spanning over a source/drain contact between the two additional gate structures.

4. The method of claim 3 , wherein the re-entrant profile is a reverse tapered profile, with a larger cross-sectional portion extending into a straight profile between the spacers and a smaller cross-sectional portion at a top portion thereof.

5. The method of claim 3 , further comprising forming capping materials provided on a top of remaining source/drain contacts and the gate structures, the capping materials are formed directly on a top surface of the source/drain contact between the two additional gate structures.

6. A method comprising:
forming a plurality of gate structures each of which comprise-source/drain regions;
forming a plurality of source/drain contacts in electrical connection with the source/drain regions of the plurality of gate structures;
forming, with a single metallization, a set of contact structures with a re-entrant profile in electrical connection with selected source/drain contacts of the plurality of source/drain contacts and the selected gate structures of the plurality of gate structures; and
forming metal wiring features at a same plane as the set of contact structures, wherein the metal wiring features are at a first wiring layer and are formed to be electrically isolated from the additional gate structures and the source/drain contacts by respective capping material.

7. The method of claim 6 , wherein the metal wiring features and the plurality of contacts are merged into single construct formed of a single layer.

8. The method of claim 1 , wherein the metal wiring features are in an enclosure between contact structures in electrical connection with the source/drain contacts.

9. The method of claim 3 , further comprising forming airgaps between contact structures.

10. The method of claim 1 , wherein at least one contact structure and an additional via contact and wiring structure form a via in contact with at least one of source/drain contact or a gate contact.

11. A method comprising:
forming a plurality of gate structures each of which are composed source/drain regions;
forming a plurality of source/drain contacts in electrical connection with the source/drain regions of the plurality of gate structures;
forming a first set of contact structures with a re-entrant profile in electrical connection with certain source/drain contacts of the plurality of source source/drain contacts and an overhang that overlaps onto spacers on opposing sides of the certain source/drain contacts;
forming a second set of contact structures with a re-entrant profile in electrical connection with the certain gate structures of the plurality of gate structures and an overhang that overlaps onto spacers on opposing sides of the certain gate structures;
forming metal wiring features in electrical connection with sidewalls of ones of the first set and second set of the plurality of contact structures; and
forming an additional contact structure with a reverse tapered profile spanning over a source/drain contact of the plurality of source/drain structures and in electrical connection with two of the plurality of gate structures.

12. The method of claim 11 , wherein the metal wiring features and the ones of the first set and the second set of the plurality of contact structures are formed on a same wiring plane in a tip-to-tip connection in a lateral orientation.

13. The method of claim 11 , wherein the first set and second set of the plurality of contact structures are self-aligned direct pattern contacts.

14. The method of claim 11 , wherein the first set and second set of the plurality of contact structures are formed from a single metallized feature for the electrical connection with the certain source/drain contacts and the certain gate structures.

15. The method of claim 11 , wherein at least one of the metal wiring features is in an enclosure between certain contact structures of the first set of contact structures, wherein the metal wiring is metallized together with the first and second set of contacts.

16. The method of claim 11 , wherein the re-entrant profile is a reverse tapered profile, with a larger cross-sectional portion extending into a straight profile between the spacers.

17. The method of claim 16 , further comprising forming capping material on the source/drain contacts and gate structures which do not have an electrical connection to the first set of contact structures and the second set of contact structures wherein the capping material provides electrical isolation from the first set of contact structures and the second set of contact structures.

18. The method of claim 11 , wherein the contact structure and an additional via contact and wiring structure form a via in contact with the source/drain contact or a gate contact.

19. The method of claim 11 , further comprising:
forming a capping material directly on a top surface of the source/drain contact of the plurality of source/drain structures to electrically isolate the source/drain contact of the plurality of source/drain structures from the additional contact structure; and
forming a wiring which is in electrical connection and directly contacts two of the plurality of source/drain contacts, the wiring and the two of the plurality of source/drain contacts are in a same wiring plane in a tip-to-tip connection in a lateral orientation.

Assignees

• Globalfoundries Us Inc

Inventors

• Stephens Jason E
• Chanemougame Daniel
• Xie Ruilong
• Liebmann Lars W
• Northrop Gregory A

Classifications

• H10W20/0633

  using subtractive patterning of the conductive members · CPC title

• H10W20/421

  Skip vias, i.e. vias that do not connect all metallization layers that they pass through · CPC title

• H10W20/0693

  by forming self-aligned vias · CPC title

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/072

  of dielectric parts comprising air gaps · CPC title