Extracting the fundamental mode in broad area quantum cascade lasers

Patent metadata

Field	Value
Publication number	US-11031753-B1
Application number	US-201815881595-A
Country	US
Kind code	B1
Filing date	Jan 26, 2018
Priority date	Nov 13, 2017
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

A broad area quantum cascade laser includes an optical cavity disposed between two sidewalls, the optical cavity including an active region for producing photons when a current is applied thereto, where the optical cavity is subject to a presence of at least one high order transverse optical mode due to its broad area geometry. The broad area quantum cascade laser may also include an optically lossy material disposed on at least a first portion of one or more of the two sidewalls.

First claim

What is claimed is:

1. A broad area quantum cascade laser, comprising:
an optical cavity defined by a top and two sidewalls;
the optical cavity including an active region for producing photons when an electric current is applied thereto, and being subject to a presence of at least one high order transverse optical mode when producing photons;
a layer of an optically low-loss material being in contact with each of the two sidewalls and also the active region;
a first layer of an optically lossy material being in contact with a first portion of each of the two sidewalls; and
the first portion extending from the top to a location short of adjacency to the active region.

2. The broad area quantum cascade laser of claim 1 , where the first portion is sized to select a fundamental optical transverse mode by causing loss to the at least one high order transverse optical mode.

3. The broad area quantum cascade laser of claim 1 , where the optically lossy material comprises a metal.

4. The broad area quantum cascade laser of claim 3 , where the metal comprises gold.

5. The broad area quantum cascade laser of claim 2 , where the first portion is sized to avoid causing an electrical short in the broad area quantum cascade laser.

6. The broad area quantum cascade laser of claim 1 , where the optically lossy material is placed in contact with the two sidewalls using a photolithographic process.

7. The broad area quantum cascade laser of claim 1 , where the optical cavity has a cavity length and the first portion extends for the cavity length, such that losses to the at least one high order transverse optical mode are distributed along the cavity length.

8. The broad area quantum cascade laser of claim 1 , where:
the first portion extends along a first length of the optical cavity; and
the optical cavity has a cavity length greater than the first length, such that losses to the at least one high order transverse optical mode are distributed along only a portion of the cavity length.

9. The broad area quantum cascade laser of claim 1 , where the optically lossy material and the optically low-loss material are positioned along the two sidewalls to cause at least a near fundamental transverse mode to operate, thereby producing a laser beam with a single lobe aligned with an optical axis of the optical cavity during operation of the broad area quantum cascade laser.

10. The broad area quantum cascade laser of claim 1 , where the optically low-loss material is comprised of a dielectric material.

11. The broad area quantum cascade laser of claim 10 , where the dielectric material is selected from a group consisting of silicon dioxide and silicon nitride.

12. The broad area quantum cascade laser of claim 1 , further comprising a second layer of the optically lossy material being in contact with the top of the optical cavity.

13. The broad area quantum cascade laser of claim 12 , where the first and second layers of the optically lossy material are contiguous.

14. A broad area quantum cascade laser, comprising: an optical cavity defined by a top and two sidewalls; the optical cavity including an active region for producing photons when an electric current is applied thereto, and being subject to a presence of at least one high order transverse optical mode when producing photons; a layer of an optically low-loss material being in contact with each of the two sidewalls and also the active region; a first layer of an optically lossy material being in contact with a first portion of one or more of the two sidewalls; and the first portion not extending so far as to lie adjacent to the active region.

15. The broad area quantum cascade laser of claim 14 , further comprising a second layer of the optically lossy material being in contact with the top of the optical cavity.

16. The broad area quantum cascade laser of claim 15 , where the first and second layers of the optically lossy material are contiguous.

17. The broad area quantum cascade laser of claim 15 , where the optically low-loss material is comprised of a dielectric material.

18. The broad area quantum cascade laser of claim 15 , where the first portion is sized to select a fundamental optical transverse mode by causing loss to the at least one high order transverse optical mode.

19. The broad area quantum cascade laser of claim 15 , where: the first portion extends along a first length of the optical cavity; and the optical cavity has a cavity length greater than the first length, such that losses to the at least one high order transverse optical mode are distributed along only a portion of the cavity length.

Assignees

• Us Gov Air Force
• The Government Of The Us Secretary Of The Air Force

Inventors

• Kaspi Ron
• Luong Sanh

Classifications

• H01S5/3401

  having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers · CPC title

• H01S5/2036 Primary

  Broad area lasers · CPC title

• H01S5/2022

  Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes · CPC title

• H01S2301/166

  Single transverse or lateral mode · CPC title

• H01S5/2219

  absorbing · CPC title