Method and device for generating short optical pulses

Patent metadata

Field	Value
Publication number	US-9543731-B2
Application number	US-201514660231-A
Country	US
Kind code	B2
Filing date	Mar 17, 2015
Priority date	Mar 17, 2015
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

An embodiment of the invention relates to a method for generating short optical pulses comprising the steps of:
operating a single section semiconductor laser in a nonlinear regime to emit chirped optical pulses at an output facet of the laser cavity, and compressing the chirped optical pulses outside the laser cavity using a dispersive element in order to generate the short optical pulses.

First claim

The invention claimed is:

1. A method for generating short optical pulses comprising the steps of:
operating a single section semiconductor laser in a nonlinear regime to emit chirped optical pulses at an output facet of the laser cavity; and
compressing the chirped optical pulses outside the laser cavity by a dispersive element to generate the short optical pulses, wherein
the single section semiconductor laser is operated with a DC injection current,
the injected DC current is such that the generated optical intensity within the laser causes nonlinear effects inside a gain medium of the laser's cavity, and
the chirped optical pulses are generated with an edge-emitting semiconductor laser having a multi-layered waveguide, the waveguide comprising at least one layer with an active region that emits light under electrical injection, and at least one aperiodic layer stack.

2. The method of claim 1 wherein the single section semiconductor laser is operated in a transverse fundamental single mode where longitudinal mode phases are locked.

3. The method of claim 1 wherein the nonlinear effects cause longitudinal mode phases to be locked.

4. The method of claim 3 wherein the nonlinear effects within the gain medium cause mutual injection locking through a generation of side bands and lead to a correlation between phases of the laser cavity modes.

5. An optical device for generating short optical pulses, the device comprising:
a single section semiconductor laser capable of being operated in a nonlinear regime and generating chirped optical pulses at an output facet of a laser cavity;
an electrical control unit connected to the single section semiconductor laser for operating the laser in the nonlinear regime; and
a dispersive element being optically connected with the laser, the dispersive element being configured to compress the chirped optical pulses to generate the short optical pulses, wherein
the control unit is configured to inject a DC injection current into the single section semiconductor laser,
the injected DC current is such that the generated optical intensity within the laser causes nonlinear effects inside a gain medium of the laser's cavity, and
the single section semiconductor laser is an edge-emitting semiconductor laser having a multi-layered waveguide, the waveguide comprising at least one layer with an active region that emits light under electrical injection, and at least one aperiodic layer stack.

6. The optical device of claim 5 wherein the control unit is configured to operate the single section semiconductor laser in a transverse fundamental single mode where longitudinal mode phases are locked.

7. The optical device of claim 5 wherein the device is configured so that the nonlinear effects cause longitudinal mode phases to be locked inside the laser cavity.

8. The optical device of claim 7 wherein the device is configured so that the nonlinear effects within the gain medium cause mutual injection locking through generation of side bands, leading to a correlation between phases of the laser cavity modes.

9. The optical device of claim 5 wherein said aperiodic layer stack comprises an aperiodic leakage controlling sequence configured to cause leakage losses for higher order modes of the emitted light.

10. The optical device of claim 9 wherein said aperiodic leakage controlling sequence comprises layers of alternating refractive indices, said layers having either a first refractive index or a second refractive index, the first refractive index being larger than the second refractive index.

11. The optical device of claim 10 wherein the thickness of the layers that have the first refractive index, decreases inside said aperiodic leakage controlling sequence towards the active region, whereas the thickness of the layers that have the second refractive index, increases towards the active region.

12. The optical device of claim 9 wherein said layer stack comprises an aperiodic mode expansion sequence configured to expand the fundamental mode of the emitted light.

13. The optical device of claim 12 wherein said aperiodic mode expansion sequence comprises layers of alternating refractive indices, said layers having either a first refractive index or a second refractive index, the first refractive index being larger than the second refractive index.

14. The optical device of claim 13 wherein the thickness of the layers of said mode expansion sequence decreases towards the active region.

Assignees

• Univ Berlin Tech
• Univ Berlin Tech

Inventors

• Rosales Ricardo
• Bimberg Dieter

Classifications

• H01S5/2036

  Broad area lasers · CPC title

• H01S5/06216

  Pulse modulation or generation · CPC title

• H01S2301/18

  Semiconductor lasers with special structural design for influencing the near- or far-field · CPC title

• H01S5/3216

  quantum well or superlattice cladding layers · CPC title

• H01S3/067

  Fibre lasers · CPC title