Method for manufacturing magnetoresistive element
US-2016005958-A1 · Jan 7, 2016 · US
Method for manufacturing magnetoresistive device
US9502644B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9502644-B1 |
| Application number | US-201615196992-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jun 29, 2016 |
| Priority date | Oct 21, 2015 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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Abstract
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The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferromagnetic layer; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of: forming a metal layer on the first ferromagnetic layer; oxidizing the metal layer; and, before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a magnetoresistive device, comprising steps of: preparing a substrate on which a first ferromagnetic layer is formed; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of: forming a metal layer on the first ferromagnetic layer; oxidizing the metal layer; and before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature. 2. The method for manufacturing a magnetoresistive device according to claim 1 , wherein the step of forming the metal layer and the step of oxidizing the metal layer are performed at the predetermined temperature. 3. The method for manufacturing a magnetoresistive device according to claim 1 , wherein the step of forming the second ferromagnetic layer is performed in a second chamber, which is different from the first chamber, after the step of forming the tunnel barrier layer and before the step of forming the second ferromagnetic layer, the substrate is transferred from the first chamber to the second chamber through a transfer chamber, and the predetermined pressure is equal to a pressure inside the transfer chamber. 4. The method for manufacturing a magnetoresistive device according to claim 1 , wherein the metal layer includes first and second metal layers, and at least one of the first and second metal layers contains magnesium.
Assignees
Inventors
Classifications
comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title
- G11B5/3909Primary
Arrangements using a magnetic tunnel junction · CPC title
Electricity · mapped topic
Electricity · mapped topic
- H01L43/12Primary
Electricity · mapped topic
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- What does patent US9502644B1 cover?
- The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferromagnetic layer; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber…
- Who is the assignee on this patent?
- Canon Anelva Corp
- What technology area does this patent fall under?
- Primary CPC classification G11B5/3909. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).