Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-11017989-B2
Application number	US-201816127452-A
Country	US
Kind code	B2
Filing date	Sep 11, 2018
Priority date	Mar 16, 2018
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

Disclosed are a collimator, a fabrication apparatus including the same, and a method of fabricating a semiconductor device using the same. The fabrication apparatus may include a chamber, a heater chuck provided in a lower region of the chamber and configured to heat a substrate, a target provided over the heater chuck, the target containing a source for a thin layer to be deposited on the substrate, a plasma electrode provided in an upper region of the chamber and configured to generate plasma near the target and thereby to produce particles from the source, and a collimator provided between the heater chuck and the target.

First claim

What is claimed is:

1. An apparatus for fabricating a semiconductor device, comprising:
a chamber;
a heater chuck provided in a lower region of the chamber;
a plasma electrode provided in an upper region of the chamber, wherein the plasma electrode is coupled to a target which contains a source material for a thin layer to be deposited on a substrate on the heater chuck; and
a collimator provided between the heater chuck and the target,
wherein the collimator comprises a plate having a plurality of holes,
wherein the plurality of holes comprise:
first holes disposed in a center region of the collimator and having a first aspect ratio; and
second holes disposed in an edge region of the collimator and having a second aspect ratio,
wherein the second aspect ratio is larger than the first aspect ratio,
wherein the first holes have a first diameter, and
wherein the second holes have a second diameter smaller than the first diameter.

2. The apparatus of claim 1 ,
wherein the second aspect ratio is 1.2 to 1.4 times larger than the first aspect ratio.

3. The apparatus of claim 2 ,
wherein the center region of the collimator has a radius of about 80 mm and the edge region of the collimator has a radius from about 80 mm to about 150 mm.

4. The apparatus of claim 2 ,
wherein, an edge and center of the plate have a same vertical thickness perpendicular to a top surface of the heater chuck, and diameters of the holes decrease in an outward direction parallel to the top surface of the heater chuck from a center of the plate toward an edge of the plate.

5. The apparatus of claim 1 ,
wherein, a distance between the target and a substrate is between about 55 mm and about 65 mm, and the plate has a thickness ranging from about 20 mm to about 40 mm.

6. The apparatus of claim 1 ,
wherein the plurality of holes are formed to have a hexagonal honeycomb shape.

7. The apparatus of claim 1 ,
wherein an aspect ratio of each of the plurality of holes is defined as a ratio of a thickness of the plate to a diameter of each of the holes, or defined as a ratio of a first area of an inner side surface of each of the holes to a second area of a top opening of each of the plurality of holes.

8. The apparatus of claim 1 ,
wherein the edge region has a first thickness in a direction perpendicular to a top surface of the heater chuck larger than a first diameter of the second holes, and
the center region has a second thickness in the direction perpendicular to the top surface of the heater chuck that is equal to a second diameter of the first holes.

9. The apparatus of claim 8 ,
wherein the first thickness is about 1.2 to about 1.4 times the first diameter.

10. The apparatus of claim 1 ,
wherein the collimator is positioned such that a distance between the collimator and substrate is greater than 10 mm, and a distance between the collimator and the target is greater than 10 mm.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jiho
• Park Jeonghee
• Park Changyup

Classifications

• H01J37/3447 Primary

  Collimators, shutters, apertures · CPC title

• H01J37/32623

  Mechanical discharge control means · CPC title

• H01J37/32082 Primary

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• C23C14/542

  Controlling the film thickness or evaporation rate · CPC title

• H01J37/32651

  Shields, e.g. dark space shields, Faraday shields · CPC title