Diamond die

Patent metadata

Field	Value
Publication number	US-11007558-B2
Application number	US-201615745849-A
Country	US
Kind code	B2
Filing date	Jul 22, 2016
Priority date	Jul 22, 2015
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.

First claim

The invention claimed is:

1. A diamond die comprising a diamond provided with a hole for drawing a wire material,
the diamond being a CVD single-crystal diamond,
an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond,
the diamond having an upper and lower surface and being provided with the hole extending from the upper surface to the lower surface and being formed perpendicular to the upper surface and lower surface,
the upper and lower surfaces of the diamond being inclined relative to a ( 110 ) plane by 1° to 15°.

2. The diamond die according to claim 1 , wherein
the hole includes a reduction portion, a bearing portion having a diameter D, a back relief portion, and an exit portion in a direction from an upstream side to a downstream side of flow of the wire material so as to define the hole, and
a length of the bearing portion is more than or equal to 0.4 D and less than or equal to 1.5 D in a shape of the hole in a cross section along the axis of the hole.

3. The diamond die according to claim 2 , wherein the diameter D is less than 50 μm, and a cross sectional shape of the hole from the back relief portion to the exit portion is a recessed curve shape.

4. The diamond die according to claim 1 , wherein the diamond die is used with an area reduction ratio of more than or equal to 8% and less than or equal to 25% during a wire drawing.

5. The diamond die according to claim 1 , wherein the CVD single-crystal diamond is used for the diamond, and in an X-ray topography image for a crystal growth main surface of the single-crystal diamond, groups of crystal defect points are gathered, each of the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists, and a density of the crystal defect points is more than 2 mm −2 .

6. The diamond die according to claim 5 , wherein a density of combined dislocation points of the crystal defect points is more than 2 mm −2 each of the combined dislocation points being a tip point of a combined dislocation reaching the crystal growth main surface, the combined dislocation resulting from a combination of at least either of a plurality of edge dislocations and a plurality of screw dislocations.

7. The diamond die according to claim 5 , wherein the diamond includes two main surfaces and a plurality of single-crystal diamond layers located between the two main surfaces, and the crystal defect line is branched into a plurality of crystal defect lines at a boundary between the two single-crystal diamond layers to increase the number of the crystal defect lines toward one of the main surfaces.

8. The diamond die according to claim 5 , wherein a plurality of crystal defect line-shaped gathered regions exist in parallel, and in the plurality of crystal defect line-shaped gathered regions, groups of the crystal defect points extend in a form of lines.

9. The diamond die according to claim 5 , wherein more than or equal to 1 ppm of nitrogen atoms are contained as impurity atoms in the single-crystal diamond, and the nitrogen atoms are nitrogen atoms other than isolated substitutional nitrogen atoms.

10. The diamond die according to claim 5 , wherein a transmittance for 400-nm light is less than or equal to 60% when a thickness of the single-crystal diamond is measured to be 500 μm or is converted into 500 μm.

11. The diamond die according to claim 1 , wherein the axis of the hole is inclined relative to a < 110 > direction of the diamond by 1° to 15°.

Assignees

• Sumitomo Electric Hardmetal Corp
• Sumitomo Electric Industries
• Almt Corp

Inventors

• Yukawa Makoto
• Suemitsu Bunya
• Kinoshita Takuya
• Sumimoto Shigetoshi
• Kobayashi Yutaka
• Ueda Akihiko
• Tatsumi Natsuo
• Nishibayashi Yoshiki
• Sumiya Hitoshi

Classifications

• C23C16/56

  After-treatment · CPC title

• C30B33/06

  Joining of crystals · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• C30B25/205

  the substrate being of insulating material · CPC title

• B21C37/047

  of fine wires · CPC title