Method for producing a substrate for the epitaxial growth of a layer of a galium-based iii-n alloy
US-2023374701-A1 · Nov 23, 2023 · US
the substrate being of insulating material
the substrate being of insulating material · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B25/205 |
| Official title | {the substrate being of insulating material} |
| Display label | the substrate being of insulating material |
| Total patents | 83 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2016 | 1 |
| 2017 | 5 |
| 2018 | 7 |
| 2019 | 3 |
| 2020 | 15 |
| 2021 | 12 |
| 2022 | 11 |
| 2023 | 8 |
| 2024 | 13 |
| 2025 | 6 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Single crystal synthetic diamond material
US-11821107-B2 · Nov 21, 2023 · US
Method of manufacture of single crystal synthetic diamond material
US-2023272551-A1 · Aug 31, 2023 · US
Laser Activated Luminescence System
US-2023062860-A1 · Mar 2, 2023 · US
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
US-2023038132-A1 · Feb 9, 2023 · US
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER
US-2023039660-A1 · Feb 9, 2023 · US
Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal InN Films and its Alloys with AlN
US-2022406591-A1 · Dec 22, 2022 · US
Method for producing chemical vapour deposition diamond
US-2022389611-A1 · Dec 8, 2022 · US
Stack comprising single-crystal diamond substrate
US-11522055-B2 · Dec 6, 2022 · US
Methods for forming an epitaxial wafer
US-2022359195-A1 · Nov 10, 2022 · US
Synthesis of thick single crystal diamond material via chemical vapour deposition
US-11486037-B2 · Nov 1, 2022 · US
Anisotropic epitaxial growth
US-2022319844-A1 · Oct 6, 2022 · US
Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures
US-11443942-B2 · Sep 13, 2022 · US
Method for manufacturing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline sic
US-2022270875-A1 · Aug 25, 2022 · US
Single crystal synthetic diamond material
US-2022154366-A1 · May 19, 2022 · US
Single crystal composite synthetic diamond material
US-2022154368-A1 · May 19, 2022 · US
Method of manufacturing silicon carbide epitaxial wafer
US-2022028688-A1 · Jan 27, 2022 · US
Method of manufacture of single crystal synthetic diamond material
US-2021285125-A1 · Sep 16, 2021 · US
Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
US-11094835-B2 · Aug 17, 2021 · US
Methods for forming large area diamond substrates
US-2021214856-A1 · Jul 15, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B25/205?
- CPC C30B25/205 is the Cooperative Patent Classification code for “the substrate being of insulating material.”
- How many patents are filed under CPC C30B25/205 (the substrate being of insulating material)?
- Our database includes 83 publications tagged with this CPC code.
- Is patent activity under CPC C30B25/205 growing?
- Publication counts under this code: 13 in 2024 vs 6 in 2025 (latest complete years).